- Feature Paper
- Article
A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems
- Ha-Duong Ngo,
- Biswajit Mukhopadhyay,
- Piotr Mackowiak,
- Kevin Kröhnert,
- Oswin Ehrmann and
- Klaus-Dieter Lang
In this paper, we present and discuss our new WSi–WSiN–Pt metallization scheme for SiC-based microsystems for applications in harsh environments. Stoichiometric material WSi was selected as contact material for SiC. The diffusion barrier material WSi...

