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Open AccessArticle

In-Plane MEMS Shallow Arch Beam for Mechanical Memory

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Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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Author to whom correspondence should be addressed.
Academic Editors: Teen-Hang Meen, Shoou-Jinn Chang, Stephen D. Prior, Artde Donald KinTak Lam and Nam-Trung Nguyen
Micromachines 2016, 7(10), 191; https://doi.org/10.3390/mi7100191
Received: 15 August 2016 / Revised: 29 September 2016 / Accepted: 11 October 2016 / Published: 18 October 2016
We demonstrate a memory device based on the nonlinear dynamics of an in-plane microelectromechanical systems (MEMS) clamped–clamped beam resonator, which is deliberately fabricated as a shallow arch. The arch beam is made of silicon, and is electrostatically actuated. The concept relies on the inherent quadratic nonlinearity originating from the arch curvature, which results in a softening behavior that creates hysteresis and co-existing states of motion. Since it is independent of the electrostatic force, this nonlinearity gives more flexibility in the operating conditions and allows for lower actuation voltages. Experimental results are generated through electrical characterization setup. Results are shown demonstrating the switching between the two vibrational states with the change of the direct current (DC) bias voltage, thereby proving the memory concept. View Full-Text
Keywords: in-plane MEMS; shallow arch; bistability; mechanical memory in-plane MEMS; shallow arch; bistability; mechanical memory
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MDPI and ACS Style

Hafiz, M.A.A.; Kosuru, L.; Ramini, A.; Chappanda, K.N.; Younis, M.I. In-Plane MEMS Shallow Arch Beam for Mechanical Memory. Micromachines 2016, 7, 191.

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