20 Results Found

Piezoelectric micromechanical ultrasonic transducers (pMUTs) are new types of distance sensors with great potential for applications in automotive, unmanned aerial vehicle, robotics, and smart homes. However, previously reported pMUTs are limited by...

Piezoelectric micromachined ultrasonic transducers (PMUTs) have been widely applied in distance sensing applications. However, the rapid movement of miniature robots in complex environments necessitates higher ranging capabilities from sensors, makin...

This paper presents a novel bimorph Piezoelectric Micromachined Ultrasonic Transducer (PMUT) fabricated with 8-inch standard CMOS-compatible processes. The bimorph structure consists of two layers of 20% scandium-doped aluminum nitride (Sc_0.2Al_0.8N)...

This paper introduces a novel nondestructive wafer scale thin film thickness measurement method by detecting the reflected picosecond ultrasonic wave transmitting between different interfacial layers. Unlike other traditional approaches used for thic...

A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are some of the outstanding properties that have made ${\mathrm{Sc}}_{\mathrm{x}}{\mathrm{Al}}_{1-\mathrm{x}}\mathrm{N}$ a promising material in numerous MEMS and optoelectronics applications. One of the substantia...

PMUTs have been widely studied in recent years, particularly those based on the SOI (silicon-on-insulator) process, which have been partially commercialized and are extensively used in advanced applications such as ultrasonic ranging and spatial posi...

This paper presents a Piezoelectric micromechanical ultrasonic transducer (PMUT) based on a Pt/ScAlN/Mo/SiO₂/Si/SiO₂/Si multilayer structure with a circular suspension film of scandium doped aluminum nitride (ScAlN). Multiphysics modeling using the f...

Scandium (Sc)-doped aluminum nitride (AlN) thin films are critical for high-frequency, high-power surface acoustic wave (SAW) devices. A composite Sc doping strategy for AlN thin films is proposed, which combines magnetron sputtering pre-doping with...

In this paper, a high-sensitivity microelectromechanical system (MEMS) piezoelectric accelerometer based on a Scandium-doped Aluminum Nitride (ScAlN) thin film is proposed. The primary structure of this accelerometer is a silicon proof mass fixed by...

This paper investigates the performance of surface acoustic wave (SAW) devices as low power MEMS temperature sensors using reactive sputter deposited aluminum nitride (AlN) and scandium doped aluminum nitride (AlScN) as piezoelectric layers on sapphi...

Film bulk acoustic resonators (FBARs) based on aluminum nitride (AlN) and scandium-doped aluminum nitride (AlScN) exhibit tremendous application aspects in the radio frequency front-end due to achievable high-frequency characteristics, superior therm...

In this study, a 3.5-GHz solidly mounted resonator (SMR) was developed by doping scandium in aluminum nitride to form AlScN as the piezoelectric thin film. Molybdenum (Mo) of 449 nm thickness and silicon dioxide (SiO₂) of 371 nm thickness were used a...

In this work, 10 nm scandium-doped aluminum nitride (AlScN) capacitors are demonstrated for the construction of the selector-free memory array application. The 10 nm Al_0.7Sc_0.3N film deposited on an 8-inch silicon wafer with sputtering technology exh...

Ultrasonic wireless power transfer technology (UWPT) represents a key technology employed for energizing implantable medical devices (IMDs). In recent years, aluminum nitride (AlN) has gained significant attention due to its biocompatibility and comp...

In this paper, a flexible piezoelectric micromachined ultrasonic transducer (PMUT) based on Scandium (Sc)-doped Aluminum Nitride (AlN) film was designed and modeled by the three-dimensional finite element method (3D-FEM). The resonant frequency of 21...

Ferroelectric scandium-doped aluminum nitride (Al_1-xSc_xN) is of considerable research interest because of its superior ferroelectricity. Studies indicate that Al_1-xSc_xN may suffer from a high leakage current, which can hinder further thickness scalin...

Ferroelectric, phase-change, and magnetic materials are considered promising candidates for advanced memory devices. Under the development dilemma of traditional silicon-based memory devices, ferroelectric materials stand out due to their unique pola...

In recent years, implantable medical devices (IMDs) have introduced groundbreaking solutions for managing various health conditions. However, traditional implanted batteries necessitate periodic surgical replacement and tend to be relatively bulky, p...

Film bulk acoustic-wave resonators (FBARs) are widely utilized in the field of radio frequency (RF) filters due to their excellent performance, such as high operation frequency and high quality. In this paper, we present the design, fabrication, and...

Piezoelectric micromachined ultrasonic transducers (PMUTs) have been widely applied in distance sensing. However, the sensing distance of currently reported miniaturized ultrasonic sensors (e.g., PMUTs or CMUT) is still limited up to a certain range...