Gallium Nitride (GaN)-Based Power Electronic Devices and Systems
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Power Electronics".
Deadline for manuscript submissions: 15 May 2025 | Viewed by 579
Special Issue Editors
Interests: (Al)GaN semiconductor materials; GaN HEMTs; power electronics; radio frequency devices; reliability; power IC
Interests: compound semiconductor materials; GaN HEMTs; solid state RF devices and IC; heterogeneous integration; advanced processing technology
Interests: GaN-based material; GaN SBD; GaN PFET
Special Issue Information
Dear Colleagues,
GaN HEMTs with an excellent factor of RG × QG have initiated a new era for solid-state power electronics, owing to their superior material properties such as high electric breakdown field, high electron mobility, and high thermal stability. The high-density and high-mobility two-dimensional electron gas (2DEG) enables a significantly low conduction loss and switching loss, which not only improves the energy conversion efficiency but also boosts the system’s power density. GaN HEMTs have achieved great success in consumer electronics, especially fast chargers. Since 2023, GaN HEMTs have also been adopted for other consumer applications such as Class D-Audio, e-tools, and home appliances. Industrial and vehicle applications are expected to be accelerated since 2024.
Recently, some new trends have emerged and are promising to further unlock the potential of GaN HEMTs. First, novel substrates of QST, bulk GaN, and sapphire are bound to improve the stability of the devices fundamentally. Second, novel device structures such as junction field-effect transistor (JFET), active passivation-HEMTs, ohmic/Schottky hybrid gate contact, gate-source bridge, pFET, etc. have been proposed to promote electrical performance and stability. Third, manifest progresses in reliability including high temperature operating life (HTOL), unclamped inductive switching (UIS), short circuit (SC), and avalanche have also been reported recently.
The Special Issue "Gallium Nitride (GaN)-Based Power Electronic Devices and Systems" of the Journal Electronics aims to present recent advantages in the design, fabrication, reliability, systems, and applications of GaN-based power electronic devices and systems. The scope of this Special Issue includes, but is not limited to, the following:
- Epitaxy of novel substrates such as QST, bulk GaN, bulk AlN, sapphire, etc.
- Reliability including BTI, TDDB, dynamic RON, aging test, etc.
- Novel concepts for device structure design.
- Novel power architecture and circuit design for high power systems.
- Monolithic integration.
- Advanced applications in industry, EVs, renewable energy, etc.
We look forward to receiving your submissions for this Special Issue!
Dr. Xiangdong Li
Dr. Weichuan Xing
Dr. Tao Zhang
Dr. Jinxu Yang
Guest Editors
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Keywords
- GaN HEMTs
- heterostructure epitaxy
- fabrication
- power electronics
- reliability
- power integrated circuits
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