Synthesis, Structure and Property Analysis of Crystalline Layers

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (20 August 2021) | Viewed by 31304

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Institute of Physics, Kazimierz Wielki University in Bydgoszcz, Bydgoszcz, Poland
Interests: scintillators; development of luminescent materials in the single crystalline and crystals forms; energy transfer proceses in scintillators; defects and dopant as emission and trapping centers in dielectrics
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Department of Production Engineering Management, University of Bydgoszcz, Unii Lubelskiej 4c, 85059 Bydgoszcz, Poland
Interests: CVD diamond; thin nano- and microcrystalline films; diamond single crystals; optical spectroscopy
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Faculty of Physics, Kazimierz Wielki University, Jana Karola Chodkiewicza 3, 85064 Bydgoszcz, Poland
Interests: CVD diamond layers; metallization; Raman spectroscopy; X-ray diffraction; cathodoluminescence; thermoluminescence; the use of polycrystalline diamond layers in the dosimetry of ionizing radiation
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Institute of Physics, Kazimierz Wielki University, Bydgoszcz, Poland
Interests: material characterization, experimental physics, crystals structure, EPR, Raman, dielectric and impedance spectroscopy, low temperature physics

Special Issue Information

Dear Colleagues,

The aim of this Special Issue is to stimulate scientific exchange of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the application of crystalline materials in industry.

We cordially invite you to publish the latest scientific results, both theoretical and experimental concerning nucleation and growth kinetics of metals, semiconductors, superconductors, and magnetic materials, both in the form of single crystals and in the form of thin polycrystalline layers.

Recent achievements in the field of synthesis and growth of monocrystalline and polycrystalline materials have opened their possibilities for many existing and prospective applications, including optics and electronics, as well as biomedicine, quantum computing, etc. Therefore, they are important materials with a strategic future for both basic model research in the field of solid state physics and chemistry and engineering applications.

We invite researchers to contribute to the Crystals Special Issue on “Synthesis, Structure, and Property Analysis of Crystalline Layers”, which is intended to serve as a multidisciplinary forum covering broad aspects of the science, technology, and application of a broad range of crystalline materials.

The Special Issue will cover (but not be restricted) to the following topics:

  • Methods of synthesis of crystalline materials;
  • Characterization methods (optical, electrical, structural, mechanical, etc.);
  • Tailoring to their end application as chemo- and bio-sensors, transducers, optical elements, electronic devices, etc.;
  • Smart materials and systems.

It is a great honor to invite you to submit a manuscript for this Special Issue. Full papers, communications, and reviews are welcome.

Prof. Dr. Yuriy Zorenko
Prof. Kazimierz Fabisiak
Prof. Kazimierz Paprocki
Prof. Szymon Łoś
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

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Keywords

  • Method of synthesis of metals, semiconductors, magnetics, inorganic, and organic substances in form of bulk and thin films
  • Characterization of electrical, magnetic, optical, mechanical, and structural properties
  • Nanomaterials and multilayer heterostructures
  • Spectroscopy of defects and dopants
  • Luminescence, cathodoluminescence, thermoluminescence
  • XRD, EDS, XPS, Raman spectroscopy, AFM, STM

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Published Papers (8 papers)

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Research

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7 pages, 2134 KiB  
Article
Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt
by Xi Wu, Hongcheng Wang, Dongxiong Ling, Chuanyu Jia, Wei Lü, Ye Liu, Fei Zhou and Zhenrong Li
Crystals 2021, 11(9), 1058; https://doi.org/10.3390/cryst11091058 - 2 Sep 2021
Cited by 3 | Viewed by 2368
Abstract
GaN crystals are synthesized by recrystallization technique in Na-Li-Ca alloy melt under different N2 pressure. X-ray powder diffraction results confirm that the structure of crystals is GaN with wurtzite type and there still have raw powders remaining. The total mass of GaN [...] Read more.
GaN crystals are synthesized by recrystallization technique in Na-Li-Ca alloy melt under different N2 pressure. X-ray powder diffraction results confirm that the structure of crystals is GaN with wurtzite type and there still have raw powders remaining. The total mass of GaN decreases with the nitrogen pressure reduces. No GaN crystals are found in the solution under N2 pressure of 0.4 MPa. The morphologies of the crystal are mainly prism and pyramid. The size of the crystal increases when closer to the liquid surface. Raman spectra indicates that these crystals are stress-free and crystal grown at 3.6 MPa has high structural quality or low impurity concentrations. The results reveal that the solubility and supersaturation of the solution are controlled by N2 pressure. The principle of GaN crystal synthesis by recrystallization is discussed. Full article
(This article belongs to the Special Issue Synthesis, Structure and Property Analysis of Crystalline Layers)
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16 pages, 5445 KiB  
Article
Crystallization and Investigation of the Structural and Optical Properties of Ce3+-Doped Y3−xCaxAl5−ySiyO12 Single Crystalline Film Phosphors
by Vitalii Gorbenko, Tetiana Zorenko, Sandra Witkiewicz-Łukaszek, Anna Shakhno, Andres Osvet, Miroslaw Batentschuk, Aleksandr Fedorov and Yuriy Zorenko
Crystals 2021, 11(7), 788; https://doi.org/10.3390/cryst11070788 - 6 Jul 2021
Cited by 6 | Viewed by 2311
Abstract
This work is devoted to the crystallization and investigation of the optical properties of single crystalline films (SCFs) of Ce3+-doped Y3−xCaxAl5−ySiyO12 garnet, where the content of Ca2+ and Si4+ cations [...] Read more.
This work is devoted to the crystallization and investigation of the optical properties of single crystalline films (SCFs) of Ce3+-doped Y3−xCaxAl5−ySiyO12 garnet, where the content of Ca2+ and Si4+ cations varied in the x = 0.13–0.52 and y = 0.065–0.5 ranges, respectively. The SCF samples were grown using the liquid phase epitaxy technique onto Y3Al5O12 substrates from the melt solution with equimolar Ca and Si content using PbO-B2O3 flux. However, the Ca and Si concentration in Y3−xCax Al5−ySiyO12:Ce SCFs is not equal: the Ca2+ content was systematically larger than that of Si4+, and the Ca2+ excess is compensated for by the Ce4+ ion formation. The absorption, scintillation, and luminescent properties of Y3−xCaxAl5−ySiyO12:Ce SCFs with different Ca/Si concentrations were investigated and compared with the sample of YAG:Ce SCF. Due to the creation of Ce4+ ions, the as-grown Y3−xCaxAl5−ySiyO12:Ce SCFs show relatively low light yield (LY) under α–particle excitation but a fast scintillation response with a decay time in the ns range. After SCF annealing in the reducing (N2 + H2) atmosphere at T > 1000 °C, the recharging of Ce4+→Ce3+ ions occurs. Furthermore, the samples annealed at 1300 °C SCF possess an LY of about 40% in comparison with the reference YAG:Ce SCF and scintillation decay kinetics much closer to that of the SCF counterpart. Due to Ca2+ and Si4+ alloying, the Ce3+ emission spectra in Y3−xCaxAl5−ySiyO12 SCFs are extended to the red range in comparison with the spectra of YAG:Ce SCF. Such an extension is caused by the Ce3+ multicenter formation at the substitutions of both Y3+ and Ca2+ dodecahedral positions in the hosts of these mixed garnets. Full article
(This article belongs to the Special Issue Synthesis, Structure and Property Analysis of Crystalline Layers)
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18 pages, 25450 KiB  
Article
The Influence of Recrystallization on Zinc Oxide Microstructures Synthesized with Sol–Gel Method on Scintillating Properties
by Ewelina Nowak, Mirosław Szybowicz, Alicja Stachowiak, Daria Piechowiak, Andrzej Miklaszewski, Marcin E. Witkowski, Michał Makowski, Winicjusz Drozdowski, Kazimierz Paprocki, Kazimierz Fabisiak, Szymon Łoś and Marek Trzcinski
Crystals 2021, 11(5), 533; https://doi.org/10.3390/cryst11050533 - 11 May 2021
Cited by 3 | Viewed by 3278
Abstract
Zinc oxide (ZnO) is one of the wide-bandgap semiconductors, which may be useful in a plethora of electronic, optical, piezoelectric, and scintillating applications. The following article consists in a structural and luminescence analysis of ZnO microfilms grown on a sapphire substrate with a [...] Read more.
Zinc oxide (ZnO) is one of the wide-bandgap semiconductors, which may be useful in a plethora of electronic, optical, piezoelectric, and scintillating applications. The following article consists in a structural and luminescence analysis of ZnO microfilms grown on a sapphire substrate with a sol–gel method. The films were annealed at different temperatures. The structures were investigated with the XRD and Raman methods, by which the influence of the substrate on the structure of the film was determined. The luminescence of films was investigated with room-temperature fluorescence, radioluminescence, and thermoluminescence. Full article
(This article belongs to the Special Issue Synthesis, Structure and Property Analysis of Crystalline Layers)
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10 pages, 3703 KiB  
Article
Improving the Ionic Conductivity of the LLZO–LZO Thin Film through Indium Doping
by Zongkai Yan, Yu Song, Shuai Wu, Yongmin Wu, Shipai Song, Xinyu Wang, Yanlin Zhu, Junsong Chen, Rui Guo and Yong Xiang
Crystals 2021, 11(4), 426; https://doi.org/10.3390/cryst11040426 - 15 Apr 2021
Cited by 5 | Viewed by 5314
Abstract
A solid-state electrolyte with an ionic conductivity comparable to that of a liquid electrolyte is demanded of all-solid-state lithium-ion batteries. Li7La3Zr2O12 (LLZO) is considered to be a promising candidate due to its good thermal stability, high [...] Read more.
A solid-state electrolyte with an ionic conductivity comparable to that of a liquid electrolyte is demanded of all-solid-state lithium-ion batteries. Li7La3Zr2O12 (LLZO) is considered to be a promising candidate due to its good thermal stability, high ionic conductivity, and wide electrochemical window. However, the synthesis of a stable cubic-phase LLZO thin film with enhanced densification at a relatively low thermal treatment temperature is yet to be developed. Indium is predicted to be a possible dopant to stabilize the cubic-phase LLZO (c-LLZO). Herein, via a nanolayer stacking process, a LLZO–Li2CO3–In2O3 multilayer solid electrolyte precursor was obtained. After thermal annealing at different temperatures, the effects of indium doping on the formation of c-LLZO and the ionic conductivities of the prepared LLZO–LZO thin film were systematically investigated. The highest ionic conductivity of 9.6 × 10−6 S·cm–1 was obtained at an annealing temperature of 800 °C because the incorporation of indium promoted the formation of c-LLZO and the highly conductive LLZO–LZO interfaces. At the end, a model of LLZO–LZO interface-enhancing ionic conductivity was proposed. This work provides a new approach for the development of low-temperature LLZO-based, solid-state thin-film batteries. Full article
(This article belongs to the Special Issue Synthesis, Structure and Property Analysis of Crystalline Layers)
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16 pages, 5065 KiB  
Article
Impact of CdCl2 Treatment in CdTe Thin Film Grown on Ultra-Thin Glass Substrate via Close Spaced Sublimation
by Nowshad Amin, Mohammad Rezaul Karim and Zeid Abdullah ALOthman
Crystals 2021, 11(4), 390; https://doi.org/10.3390/cryst11040390 - 7 Apr 2021
Cited by 21 | Viewed by 3526
Abstract
In this study, close-spaced sublimation (CSS) grown cadmium telluride (CdTe) thin films with good adhesion to 100 µm thin Schott D263T ultra-thin glass (UTG) were investigated. Cadmium chloride (CdCl2) treatment in vacuum ambient was executed to enhance the film quality and [...] Read more.
In this study, close-spaced sublimation (CSS) grown cadmium telluride (CdTe) thin films with good adhesion to 100 µm thin Schott D263T ultra-thin glass (UTG) were investigated. Cadmium chloride (CdCl2) treatment in vacuum ambient was executed to enhance the film quality and optoelectrical properties of CdTe thin film. The post-deposition annealing temperature ranging from 360–420 °C was examined to improve the CdTe film quality on UTG substrate. Various characterization techniques have been used to observe the compositional, morphological, optical, as well as electrical properties. Scanning electron microscopy (SEM) verified that the CdTe morphology and grain size could be controlled via CdCl2 treatment temperature. Energy Dispersive X-Ray Analysis (EDX) results confirmed that the annealing temperature range of 375–390 °C yielded the stoichiometric CdTe films. UV-Vis analysis estimated the post-treatment bandgap energy in the range of 1.39–1.46 eV. Carrier concentration and resistivity were obtained in the order of 1013 cm−3 and 104 Ω-cm, respectively. All the experimental results established that the CdCl2 treatment temperature range of 390–405 °C might be considered as the optimum process temperature for the deposition of CdTe solar cell on UTG substrate in close-spaced sublimation (CSS) method. Full article
(This article belongs to the Special Issue Synthesis, Structure and Property Analysis of Crystalline Layers)
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13 pages, 10225 KiB  
Article
The Role of Deposition Temperature in the Photovoltaic Properties of RF-Sputtered CdSe Thin Films
by Hasrul Nisham Rosly, Kazi Sajedur Rahman, Siti Fazlili Abdullah, Muhammad Najib Harif, Camellia Doroody, Puvaneswaran Chelvanathan, Halina Misran, Kamaruzzaman Sopian and Nowshad Amin
Crystals 2021, 11(1), 73; https://doi.org/10.3390/cryst11010073 - 17 Jan 2021
Cited by 20 | Viewed by 3333
Abstract
Cadmium selenide (CdSe) thin films were grown on borosilicate glass substrates using the RF magnetron sputtering method. In this study, CdSe thin film was deposited at a deposition temperature in the range of 25 °C to 400 °C. The influence of deposition or [...] Read more.
Cadmium selenide (CdSe) thin films were grown on borosilicate glass substrates using the RF magnetron sputtering method. In this study, CdSe thin film was deposited at a deposition temperature in the range of 25 °C to 400 °C. The influence of deposition or growth temperature on the structural, morphological, and opto-electrical properties of CdSe films was investigated elaborately to achieve a good-quality window layer for solar-cell applications. The crystal structure, surface morphology, and opto-electrical characteristics of sputtered CdSe films were determined using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), UV–Vis spectrophotometry, and Hall effect measurement, respectively. The XRD results revealed the polycrystalline nature of CdSe, with a hexagonal structure having a strong preferential orientation toward the (002) plane. As evident from the FESEM images, the average grain size and surface morphology of the films were dependent on deposition temperatures. The carrier concentration was obtained as 1014 cm−3. The band gap in the range of 1.65–1.79 eV was found. The explored results suggested that sputtered CdSe thin film deposited at 300 °C has the potential to be used as a window layer in solar cells. Full article
(This article belongs to the Special Issue Synthesis, Structure and Property Analysis of Crystalline Layers)
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11 pages, 1742 KiB  
Article
Non-Isothermal Crystallization Behavior of Poly(vinylidene fluoride) in Dialkyl Phthalate Diluents during Thermally Induced Phase Separation Process
by Yakai Lin, Yuanhui Tang, Lin Wang and Xiaolin Wang
Crystals 2020, 10(9), 782; https://doi.org/10.3390/cryst10090782 - 3 Sep 2020
Cited by 7 | Viewed by 2220
Abstract
The non-isothermal crystallization behavior of poly(vinylidene fluoride) (PVDF) in dialkyl phthalate diluents during the thermally induced phase separation (TIPS) process was investigated by differential scanning calorimetry (DSC) at various cooling rates. Dialkyl phthalates with different alkyl chain-length, namely dimethyl phthalate (DMP), diethyl phthalate [...] Read more.
The non-isothermal crystallization behavior of poly(vinylidene fluoride) (PVDF) in dialkyl phthalate diluents during the thermally induced phase separation (TIPS) process was investigated by differential scanning calorimetry (DSC) at various cooling rates. Dialkyl phthalates with different alkyl chain-length, namely dimethyl phthalate (DMP), diethyl phthalate (DEP) and dibutyl phthalate (DBP), were used as the diluent. The effects of alkyl chain-length of dialkyl phthalate and cooling rate on the non-isothermal crystallization behavior as implied by the Avrami analysis modified by Jeziorny and Mo’s analysis were determined. The values of half-time, t1/2, and the parameters Zc and F(t), which characterized the kinetics of non-isothermal crystallization, showed that the crystallization rate increased with the increase of the alkyl chain-length of dialkyl phthalate due to the lower compatibility between PVDF and dialkyl phthalate. Moreover, the alkyl chain-length of dialkyl phthalate also has a great impact on the compact spherulitic structure of PVDF membranes prepared from different PVDF/dialkyl phthalate blends. With the decrease of the alkyl chain-length of dialkyl phthalate, the number of spherulites increased and the size of spherulites became smaller. This research thus not only proves the effects of alkyl chain-length of dialkyl phthalate on the non-isothermal crystallization behavior of PVDF, but also provides a systematic strategy to evaluate a single diluent during the TIPS process. Full article
(This article belongs to the Special Issue Synthesis, Structure and Property Analysis of Crystalline Layers)
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Review

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31 pages, 1936 KiB  
Review
Graphene to Advanced MoS2: A Review of Structure, Synthesis, and Optoelectronic Device Application
by Tahreem Nawz, Amna Safdar, Muzammil Hussain, Dae Sung Lee and Muhammad Siyar
Crystals 2020, 10(10), 902; https://doi.org/10.3390/cryst10100902 - 6 Oct 2020
Cited by 43 | Viewed by 7498
Abstract
In contrast to zero-dimensional (0D), one-dimensional (1D), and even their bulk equivalents, in two-dimensional (2D) layered materials, charge carriers are confined across thickness and are empowered to move across the planes. The features of 2D structures, such as quantum confinement, high absorption coefficient, [...] Read more.
In contrast to zero-dimensional (0D), one-dimensional (1D), and even their bulk equivalents, in two-dimensional (2D) layered materials, charge carriers are confined across thickness and are empowered to move across the planes. The features of 2D structures, such as quantum confinement, high absorption coefficient, high surface-to-volume ratio, and tunable bandgap, make them an encouraging contestant in various fields such as electronics, energy storage, catalysis, etc. In this review, we provide a gentle introduction to the 2D family, then a brief description of transition metal dichalcogenides (TMDCs), mainly focusing on MoS2, followed by the crystal structure and synthesis of MoS2, and finally wet chemistry methods. Later on, applications of MoS2 in dye-sensitized, organic, and perovskite solar cells are discussed. MoS2 has impressive optoelectronic properties; due to the fact of its tunable work function, it can be used as a transport layer, buffer layer, and as an absorber layer in heterojunction solar cells. A power conversion efficiency (PCE) of 8.40% as an absorber and 13.3% as carrier transfer layer have been reported for MoS2-based organic and perovskite solar cells, respectively. Moreover, MoS2 is a potential replacement for the platinum counter electrode in dye-sensitized solar cells with a PCE of 7.50%. This review also highlights the incorporation of MoS2 in silicon-based heterostructures where graphene/MoS2/n-Si-based heterojunction solar cell devices exhibit a PCE of 11.1%. Full article
(This article belongs to the Special Issue Synthesis, Structure and Property Analysis of Crystalline Layers)
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