- Article
Oxygen-Plasma-Treated Al/TaOX/Al Resistive Memory for Enhanced Synaptic Characteristics
- Gyeongpyo Kim,
- Seoyoung Park,
- Minsuk Koo and
- Sungjun Kim
In this study, we investigate the impact of O2 plasma treatment on the performance of Al/TaOX/Al-based resistive random-access memory (RRAM) devices, focusing on applications in neuromorphic systems. Comparative analysis using scanning electron micro...

