Materials, Volume 18, Issue 18
2025 September-2 - 212 articles
Cover Story: Substrate orientation-engineered ZnO optoelectronic synaptic devices fabricated by a sol–gel process exhibit tunable synaptic plasticity and visual memory, advancing neuromorphic computing applications. Polar ZnO on c-plane sapphire exhibits strong internal polarization fields, which accelerate recombination and limit persistent photoconductivity. In contrast, nonpolar ZnO on m-plane sapphire suppresses polarization fields, enabling longer carrier lifetimes and stronger memory retention. The brain-inspired schematic highlights the analogy between presynaptic/post-synaptic signaling and optoelectronic synapse operation, where UV light triggers synaptic responses. This work demonstrates that substrate orientation serves as an effective strategy for enhancing neuromorphic performance in oxide-based optoelectronic devices. View this paper - Issues are regarded as officially published after their release is announced to the table of contents alert mailing list .
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