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Recent Advances in Magnetic and Electronic Materials and Their Applications
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Recent Advances in Magnetic and Electronic Materials and Their Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 20 September 2025 | Viewed by 1889

Special Issue Editors

Prof. Dr. Xianmin Zhang

E-Mail Website
Guest Editor
Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, China
Interests: magnetic materials; spintronics; first-principle calculation; memristor; 2D magnetic materials; topological materials; spin transport; spin valves; single-molecule magnets
Dr. Junwei Tong

E-Mail Website
Guest Editor
Department of Physics, Freie Universität Berlin, 14195 Berlin, Germany
Interests: spintronics; first-principle calculation; terahertz spintronics
Dr. Liuxia Ruan

E-Mail Website
Guest Editor
Zhejiang Laboratory, Hangzhou 311100, China
Interests: magnetic materials; single-molecule magnets; haptic devices; sensors; actuators

Special Issue Information

Dear Colleagues,

Magnetic and electronic materials can respond to external magnetic and electronic fields, exhibiting unique physical properties. They have broad applications in various technological fields, including data storage, sensors, medical imaging, and energy conversion. The development of magnetic and electronic functional materials has recently gained significant attention in the fields of solid-state physics, materials science, and engineering. To obtain high-performance materials, scientists have implemented various strategies such as predicting and synthesizing new magnetic and electronic materials through alloying, energy band engineering, element doping, etc. These strategies have greatly promoted the application of functional materials. By continuously optimizing the magnetic and electronic properties, innovative strategies provide new possibilities for future industrial applications in magnetic and electronic technological fields.

We are pleased to invite you to submit your research to this Special Issue, entitled "Recent Advances in Magnetic and Electronic Materials and Their Applications".

This Special Issue, entitled “Recent Advances in Magnetic and Electronic Materials and Their Applications”, aims to provide a unique international forum for researchers working in magnetic and electronic functional materials to report on their latest endeavors in advancing this field. Topics of interest include the following: new pristine magnetic and electronic materials, strategies to improve the performance, theoretical understanding, physical insights into engineering high-performance magnetic and electronic materials, computational discovery of new materials, and more. This Special Issue seeks to collate cutting-edge research and developments in the field, fostering collaboration and innovation among scientists and engineers dedicated to exploring and enhancing the capabilities of magnetic and electronic functional materials.

In this Special Issue, original research articles and reviews are welcome to be submitted. Research areas may include, but are not limited to, the following: magnetic materials; electronic materials; electronic transition; 2D magnetic materials; antiferromagnetic materials; half-metal; topological materials; spin transport; spinterface; single-molecule magnets; spin–orbit torque; spin Hall effect; multiferroic materials; and magnetoresistance.

We look forward to receiving your contributions.

Prof. Dr. Xianmin Zhang
Dr. Junwei Tong
Dr. Liuxia Ruan
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • magnetic materials
  • electronic materials
  • 2D materials
  • antiferromagnetic
  • spintronics
  • topological materials
  • Curie temperature
  • magnetoresistance
  • phase transition
  • electronic transition

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Further information on MDPI's Special Issue policies can be found here.

Published Papers (2 papers)

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Research

14 pages, 3776 KiB  
Article
Magnetocaloric Properties and Microstructures of HoB2 and Nb-Substituted HoB2
by Mahboobeh Shahbazi, Ali Dehghan Manshadi, Kiran Shinde and Ian D. R. Mackinnon
Materials 2025, 18(4), 866; https://doi.org/10.3390/ma18040866 - 17 Feb 2025
Viewed by 554
Abstract
We report on the arc melt syntheses of HoB2 and Nb-substituted HoB2 polycrystalline ingots and their magnetocaloric and microstructural properties. XRD data and microstructural analysis reveal that a nominal 10% Nb addition during synthesis results in changes to unit cell parameters [...] Read more.
We report on the arc melt syntheses of HoB2 and Nb-substituted HoB2 polycrystalline ingots and their magnetocaloric and microstructural properties. XRD data and microstructural analysis reveal that a nominal 10% Nb addition during synthesis results in changes to unit cell parameters and grain morphology. Interpretation of the refined cell parameters using Vegard’s law shows that Nb substitutes into HoB2 with stoichiometry Ho0.93Nb0.07B2. Arc-melted products are polycrystalline bulk samples containing minor phases such as Ho2O3, Ho, and HoB4. Nb substitution results in a smaller grain size (~sub-micron) and a higher Curie temperature, TC, compared to HoB2. With a 10 T applied field, the maximum magnetic entropy, ΔSM, for HoB2 and for Ho0.93Nb0.07B2, is 46.8 Jkg−1K−1 and 38.2 Jkg−1K−1 at 18 K and 21 K, respectively. Both samples show second-order phase transitions. Despite high totals of minor phases (e.g., ~10 wt.% and ~25 wt.%), the calculated relative cooling powers are greater than 1300 Jkg−1 and 600 Jkg−1 at 10 T and 5 T, respectively. The magnetocaloric properties of both samples are consistent with Holmium boride compounds prepared via alternative methods. Full article
(This article belongs to the Special Issue Recent Advances in Magnetic and Electronic Materials and Their Applications)
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14 pages, 4706 KiB  
Article
Valley-Related Multipiezo Effect in Altermagnet Monolayer V2STeO
by Yufang Chang, Yanzhao Wu, Li Deng, Xiang Yin and Xianmin Zhang
Materials 2025, 18(3), 527; https://doi.org/10.3390/ma18030527 - 24 Jan 2025
Viewed by 885
Abstract
The multipiezo effect realizes the coupling of strain with magnetism and electricity, which provides a new way of designing multifunctional devices. In this study, monolayer V2STeO is demonstrated to be an altermagnet semiconductor with a direct band gap of 0.41 eV. [...] Read more.
The multipiezo effect realizes the coupling of strain with magnetism and electricity, which provides a new way of designing multifunctional devices. In this study, monolayer V2STeO is demonstrated to be an altermagnet semiconductor with a direct band gap of 0.41 eV. The spin splittings of monolayer V2STeO are as high as 1114 and 1257 meV at the valence and conduction bands, respectively. Moreover, a pair of energy degeneracy valleys appears at X and Y points in the first Brillouin zone. The valley polarization and reversion can be achieved by applying uniaxial strains along different directions, indicating a piezovalley effect. In addition, a net magnetization coupled with uniaxial strain and hole doping can be induced in monolayer V2STeO, presenting the piezomagnetic feature. Furthermore, due to the Janus structure, the inversion symmetry of monolayer V2STeO is naturally broken, resulting in the piezoelectric property. The integration of the altermagnet, piezovalley, piezomagnetic, and piezoelectric properties make monolayer V2STeO a promising candidate for multifunctional spintronic and valleytronic devices. Full article
(This article belongs to the Special Issue Recent Advances in Magnetic and Electronic Materials and Their Applications)
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