Two Dimensional Materials for Nano-Electronic Application
A special issue of Molecules (ISSN 1420-3049). This special issue belongs to the section "Materials Chemistry".
Deadline for manuscript submissions: closed (31 August 2022) | Viewed by 243
Special Issue Editor
Interests: 2D field effect transistor on transition metal dichalcogenide (TMDCs); graphene; CMOS; photodetection; magnetoresistance
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Special Issue Information
Dear Colleagues,
Two-dimensional materials are currently gaining increasing interest in electronics/optoelectronics, as they allow us to extend the performance of traditional semiconductor devices or to demonstrate completely new device concepts and exciting physics.
Field effect transistors based on 2D semiconductors, such as transition metal dichalcogenides (MoS2, WSe2, MoTe2, etc.), can have high speed and low power consumption compared to those with conventional dimensional semiconductors, and the ability to scale down to the nanoscale. In addition, 2D materials can respond to broadband light, electromagnetic waves, magnetic field, and thermal and mechanical stress, and sense various chemicals, gases, and biomolecules. They also have the ability to adapt to different flexible and stretchable substrates, leading to numerous applications across oncompeting components, sensors, human–machine interfaces, wireless communication modules, and other passive devices. However, such promising applications will only be possible with much research effort at all levels. Two-dimensional materials are promising to address the current challenge of dimension reduction.
For this Special Issue, we welcome the submission of original research articles, communications, and reviews on recent advances in graphene and/or novel 2D materials and electronic devices, and applications that use them.
Dr. Atiye Pezeshki
Guest Editor
Manuscript Submission Information
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Keywords
- graphene
- transition metal dichalcogenides
- field effect transistor
- magnetoresistance
- complementary inverter
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