Heterostructures for High-Performance Optoelectronic Devices
A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "D1: Advanced Energy Materials".
Deadline for manuscript submissions: closed (22 January 2022) | Viewed by 3115
Special Issue Editor
Special Issue Information
Dear Colleagues,
Heterostructure, which is defined as a combination of two or more different semiconductors, makes it possible to enhance transport properties and reduce defect states, leading to the emergence of synergetic material combinations with unsurpassed performances. Specifically, heterostructure is suitable for optoelectronic devices, including solar cells, LEDs, laser diodes, and photodetectors. From III–V compound semiconductors and Si/organic-to-halide perovskite, there is an increasing interest in the modification of interfaces between them and the change of composition for device performance and stability. The purpose of this Special Issue is to address the advances in research related to the heterostructures for the optoelectronic devices and engineering interfaces for enhancing the performances. We invite original manuscripts presenting recent advances in this area with special reference to the following topics:
- The interfaces of III–V compound semiconductors for tuning the optical and electrical properties by changing the composition of materials;
- Modification of Si surfaces for efficient organic/Si photovoltaics;
- Physical chemistry or material chemistry of interlayer for high-performance organic/Si photovoltaics;
- A-site or B-site engineering for stable interfaces of halide perovskite (ABX3) solar cells;
- Ligand-engineering in mixed halide for stable and efficient perovskite optoelectronic devices;
- The new architectures of heterostructures for advanced optoelectronic devices.
Dr. Sung Bum Kang
Guest Editor
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Keywords
- heterostructure
- photovoltaics
- optoelectronic devices
- III–V compound semiconductors
- Si-organic hetero-interfaces
- halide perovskite
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