Application of Wide-Bandgap Devices in Power Electronics and Emerging Design Techniques

Dear Colleagues,

Wide-bandgap semiconductors such as silicon carbon (SiC) and gallium nitride (GaN) have been widely applied and extensively investigated for power conversion applications, where they have successfully demonstrated their superiority to counteractive silicon-based power devices. However, many unknows remain to be unburied and there are challenges to overcome on both device and system levels. With many emerging opportunities and the special requirements of various applications, many issues still exist and need to be addressed, including but not limited to the following topics.
The aim of this Special Issue is to concentrate all related contributions on wide-bandgap devices in the power area to provide a common platform for the presentation and discussion of new research/engineering findings and results.

Topics of interest for this Special Issue include, but are not limited to:

• Characterization and modeling of wide-bandgap power devices such as SiC and GaN;
• Reliability assessment and lifetime prediction;
• Gate driver, protection, measurement and other auxiliary circuits;
• Integrated magnetics and emerging passive components for high-frequency power design;
• Thermal management;
• Optimal layout and electromagnetic design;
• Novel control strategies for high-frequency power supply;
• Simulation model optimization on device, circuit or system levels;
• Applications of wide-bandgap devices in power electronic systems.

Dr. Xiao Li
Dr. Yushan Liu
Guest Editors

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