Gallium Nitride HEMTs: Characterization, Modeling and Design Techniques for Microwave and Millimeter-Wave Applications

Dear Colleagues,

Thirty years after being proposed as a revolutionary technology, gallium nitride-based high electron-mobility transistors are today a well-established reality. Thanks to the superior properties of the material, such as wide bandgap and high electron mobility, HEMTs have been fabricated with a record performance as to breakdown voltages, current densities, and thermal resistances.

On this basis, GaN HEMTs are increasingly attractive in analog front-end circuits capable of delivering, handling, and withstanding remarkable power levels, i.e., high-power amplifiers, switches, and highly survivable low-noise amplifiers. On top of that, all of these key functions can be integrated on what are becoming known as Single-Chip Front Ends. The applications affected by this paradigm shift range from radar to radio communications, in both the commercial and military spheres, and at frequencies which easily reach the V-band. In addition to the terrestrial and air-borne segments, recent years have also seen the first space qualifications of several GaN HEMT processes both by US and European foundries, which testifies to the full maturity of the underlying technology.

The present Special Issue aims at collecting original contributions and reviews reporting the state-of-the-art of gallium nitride HEMT technology, with particular focus on characterization and modeling methods, but also including fabrication and circuit design techniques.

Dr. Sergio Colangeli
Dr. Walter Ciccognani
Prof. Dr. Ernesto Limiti
Guest Editor

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