GaN-Based Electronic Materials and Devices
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".
Deadline for manuscript submissions: closed (15 February 2025) | Viewed by 2464
Special Issue Editor
Special Issue Information
Dear Colleagues,
Over the last decade, GaN-based electronic devices for power or radio frequency (RF) applications have been extensively researched due to their extraordinary material properties. Firstly, it is very important to grow high-quality GaN-based epitaxial layers on foreign substrates such as Si (111) and SiC by MOCVD, MBE, HVPE, etc. Based on these high-quality epitaxial layers, the electronic devices for high-power and high-frequency applications will be fabricated with an optimized fabrication process. In addition, to improve the device’s performance, the design and layout of these devices are very important to the simulation tool. GaN-based 3D nanostructured electronics devices such as FinFET, nanowires, and nanosheets have been studied with the advantages of device structure for gate controllability. This Special Issue will publish research papers and review articles that focus on recent developments in the GaN-based epitaxial layer and GaN-based electronic device technology.
The following topics will be explored in this Special Issue:
(1) Growth and characterization of GaN-based epitaxial layers.
(2) GaN-based power electronics for high-power applications.
(3) GaN-based RF HEMT for high-frequency applications.
(4) GaN-based 3D nanostructured electronic devices (FinFET, nanowires, and nanosheets).
(5) Simulation-based research of GaN HEMT.
Prof. Dr. Jeong-Gil Kim
Guest Editor
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Keywords
- GaN HEMT
- power electronics
- RF HEMT
- 3D nanostructured devices
- TCAD simulation
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