Electrical Characterization, Modeling and Simulation of CMOS Memory Devices

Dear Colleagues,

The memory systems of modern digital devices are increasingly becoming the center of attention for the research community and the semiconductor industry. On one hand, it is necessary to push forward with the development of new technologies for the digital devices of the future, like MRAMs, STT-RAMs and PCRAMs. On the other hand, it is necessary to consolidate the current technology through the search for new materials and architectures compatible with the current CMOS process in order to guarantee the integration of logic and memory in the same chip. In this context, this Special Issue aims to present studies on new materials and architectures for memory devices, conducted using methods of electrical characterization, modeling and device simulation and focused on consolidated themes such as non-volatile NAND flash and discrete-trap memories. Fully compatible technological options for the near future, such as resistive RAM memories, one-transistor (1T) and MIMCAP based DRAMs, will also be considered.

Prof. Dr. Gino Giusi
Guest Editor

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