Novel Semiconductor Devices Technology and Systems

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: 20 November 2024 | Viewed by 2973

Special Issue Editors


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Guest Editor
Department of Electronic Engineering, Gangneung-Wonju National University, Gangneung 640-2387, Republic of Korea
Interests: neuromorphic devices; processing in memory devices; steep switching FET; nano material based gas sensor

E-Mail Website
Guest Editor
Department of Electronics Engineering, Korea National University of Transportation, Chungju 27469, Korea
Interests: advanced CMOS devices; volatile/nonvolatile memory devices; device modeling and simulation; circuit design; reliability analysis (HCI/BTI/radiation)
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Special Issue Information

Dear Colleagues,

We are pleased to announce a Special Issue on "Novel Semiconductor Devices Technology and Systems" inviting contributions from researchers and experts in the field. This Special Issue aims to explore the latest advancements and breakthroughs in semiconductor devices and their applications, focusing on emerging technologies and systems that have the potential to revolutionize various industries.

Semiconductor devices are at the heart of modern technology, powering everything from consumer electronics to advanced memory, logic devices, and computing systems. The rapid pace of innovation in this field has led to the development of novel devices that offer improved performance, energy efficiency, and functionality. This Special Issue will cover a wide range of topics, including but not limited to semiconductor materials, device fabrication techniques, nanoelectronics, optoelectronics, power devices, quantum computing, and integrated circuits.

We invite researchers, academicians, engineers, and industry professionals to contribute their original research articles, reviews, and case studies to this Special Issue. This is an excellent opportunity to showcase your work and contribute to the collective knowledge in the field of semiconductor devices. We encourage submissions that highlight cutting-edge research, present new methodologies, and demonstrate practical applications of technology and systems in relation to novel semiconductor devices.

We look forward to your valuable contributions and hope that this Special Issue will foster collaboration and knowledge exchange among researchers and readers. Together, let us explore the exciting possibilities that novel semiconductor devices bring to our technological future.

Dr. Min-Woo Kwon
Prof. Dr. Myounggon Kang
Guest Editors

Manuscript Submission Information

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Keywords

  • novel semiconductor devices
  • neuromorphic devices
  • processing in memory devices
  • emerging memory
  • beyond CMOS transistors

Published Papers (3 papers)

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Research

16 pages, 7262 KiB  
Article
Novel Low-Loss Reverse-Conducting Insulated-Gate Bipolar Transitor with Collector-Side Injection-Enhanced Structure
by Peijian Zhang, Sheng Qiu, Kunfeng Zhu and Wensuo Chen
Electronics 2024, 13(1), 23; https://doi.org/10.3390/electronics13010023 - 20 Dec 2023
Viewed by 591
Abstract
In this paper, a new concept of low-loss Reverse-Conducting Insulated-Gate Bipolar Transistor with Collector-side Injection-Enhanced structure (RC-IGBT-CIE) is proposed and investigated using simulations. In reverse conduction (the on state of the diode mode), the CIE structure enhances the collector-side carrier concentration of the [...] Read more.
In this paper, a new concept of low-loss Reverse-Conducting Insulated-Gate Bipolar Transistor with Collector-side Injection-Enhanced structure (RC-IGBT-CIE) is proposed and investigated using simulations. In reverse conduction (the on state of the diode mode), the CIE structure enhances the collector-side carrier concentration of the proposed RC-IGBT-CIE, which results in low reverse-conducting voltage (VF). The low reverse recovery loss and low turn-on loss using an inductive load circuit are obtained by using the modified carrier concentration profile resulted from both the CIE effect and the low-injection-efficiency p-emitter. Simulation results show that, with the same sum of turn-on loss and reverse recovery loss (Eon + Erec), when compared to conventional RC-IGBT with anti-parallel thyristor (RC-IGBT-thyristor), the RC-IGBT-CIE reduces VF by 9.2%, and meanwhile, with the same total conducting voltage (Von, sat + VF), the total switching loss (Eoff + Eon + Erec) is reduced by 20.9% but does not sacrifice short-circuit capability. Full article
(This article belongs to the Special Issue Novel Semiconductor Devices Technology and Systems)
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12 pages, 4731 KiB  
Article
Demonstration of a Frequency Doubler Using a Tunnel Field-Effect Transistor with Dual Pocket Doping
by Jang Hyun Kim and Hyunwoo Kim
Electronics 2023, 12(24), 4932; https://doi.org/10.3390/electronics12244932 - 8 Dec 2023
Viewed by 789
Abstract
In this study, a frequency doubler that consists of a tunnel field-effect transistor (TFET) with dual pocket doping is proposed, and its operation is verified using technology computer-aided design (TCAD) simulations. The frequency-doubling operation is important to having symmetrical current characteristics, which eliminate [...] Read more.
In this study, a frequency doubler that consists of a tunnel field-effect transistor (TFET) with dual pocket doping is proposed, and its operation is verified using technology computer-aided design (TCAD) simulations. The frequency-doubling operation is important to having symmetrical current characteristics, which eliminate odd harmonics and the need for extra filter circuitry. The proposed TFET has intrinsically bidirectional and controllable currents that can be implemented by pocket doping, which is located at the junction between the source/drain (S/D) and the channel region, to modify tunneling probabilities. The source-to-channel (ISC) and channel-to-drain currents (ICD) can be independently changed by managing each pocket doping concentration on the source and drain sides (NS,POC and ND,POC). After that, the current matching process was investigated through NS,POC and ND,POC splits, respectively. However, it was found that the optimized doping condition achieved at the device level (namely, a transistor evaluation) is not suitable for a frequency doubler operation because the voltage drop generated by a load resistor in the frequency doubler circuit configuration causes the currents to be unbalanced between ISC and ICD. Therefore, after symmetrical current matching was performed by optimizing NS,POC and ND,POC at the circuit level, it was clearly seen that the output frequency was doubled in comparison to the input sinusoidal signal. In addition, the effects of the S/D and pocket doping variations that can occur during process integration were investigated to determine how much frequency multiplications are affected, and these variations have the immunity of S/D doping and pocket doping length changes. Furthermore, the impact of device scaling with gate length (LG) variations was evaluated. Based on these findings, the proposed frequency doubler is anticipated to offer benefits for circuit design and low-power applications compared to the conventional one. Full article
(This article belongs to the Special Issue Novel Semiconductor Devices Technology and Systems)
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11 pages, 3576 KiB  
Article
Self-Rectifying Resistive Switching Memory Based on Molybdenum Disulfide for Reduction of Leakage Current in Synapse Arrays
by DongJun Jang and Min-Woo Kwon
Electronics 2023, 12(22), 4650; https://doi.org/10.3390/electronics12224650 - 15 Nov 2023
Viewed by 1053
Abstract
Resistive random-access memory has emerged as a promising non-volatile memory technology, receiving substantial attention due to its potential for high operational performance, low power consumption, temperature robustness, and scalability. Two-dimensional nanostructured materials play a pivotal role in RRAM devices, offering enhanced electrical properties [...] Read more.
Resistive random-access memory has emerged as a promising non-volatile memory technology, receiving substantial attention due to its potential for high operational performance, low power consumption, temperature robustness, and scalability. Two-dimensional nanostructured materials play a pivotal role in RRAM devices, offering enhanced electrical properties and physical attributes, which contribute to overall device improvement. In this study, the self-rectifying switching behavior in RRAM devices is analyzed based on molybdenum disulfide nanocomposites decorated with Pd on SiO2/Si substrates. The switching layer integration of Pd and MoS2 at the nanoscale effectively mitigates leakage currents decreasing from cross-talk in the RRAM array, eliminating the need for a separate selector device. The successful demonstration of the expected RRAM switching operation and low switching dispersion follows the application of a Pd nanoparticle embedding method. The switching channel layer is presented as an independent (Pd nanoparticle coating and MoS2 nanosheet) nanocomposite. The switching layer length (4000 μm) and width (7000 μm) play an important role in a lateral-conductive-filament-based RRAM device. Through the bipolar switching behavior extraction of RRAM, the formation of the conductive bridges via electronic migration is explained. The fabricated Pd-MoS2 synaptic RRAM device results in a high resistive current ratio for a forward/reverse current higher than 60 at a low resistance state and observes a memory on/off ratio of 103, exhibiting stable resistance switching behavior. Full article
(This article belongs to the Special Issue Novel Semiconductor Devices Technology and Systems)
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Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

Title: Floating body effect at vertical structured DRAM Cell transistor
Authors: Myung-Hyun Baek
Affiliation: gangneungwonju national univ.
Abstract: none

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