- Article
Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness
- Hao Liu,
- Jiaxing Wei,
- Zhaoxiang Wei,
- Siyang Liu and
- Longxing Shi
In this paper, we compare a new 1.2 kV rated 4H-SiC split-gate (SG) MOSFET with the conventional planar-gate (PG) MOSFETs. Both structures were fabricated with the same design rules and process platform. Therefore, the structures have similar electri...

