- Review
Recent Advancements in N-polar GaN HEMT Technology
- Emre Akso,
- Kamruzzaman Khan,
- Henry Collins,
- Boyu Wang,
- Robert Hamwey,
- Tanmay Chavan,
- Christopher Clymore,
- Weiyi Li,
- Oguz Odabasi and
- Matthew Guidry
- + 4 authors
N-polar GaN HEMT technology has emerged as a disruptive technology that outperforms Ga-polar GaN HEMTs in terms of high-frequency power amplification capability. In this paper, the authors present a comprehensive review of the evolution of N-polar Ga...

