- Article
Formation of GeO2 under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor
- Ewa Dumiszewska,
- Paweł Ciepielewski,
- Piotr A. Caban,
- Iwona Jóźwik,
- Jaroslaw Gaca and
- Jacek M. Baranowski
The problem of graphene protection of Ge surfaces against oxidation is investigated. Raman, X-Ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements of graphene epitaxially grown on Ge(001)/Si(001) su...

