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4 Results Found

  • Feature Paper
  • Review
  • Open Access
101 Citations
20,451 Views
30 Pages

10 March 2017

This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered t...

(This article belongs to the Special Issue Semiconductor Power Devices)
  • Article
  • Open Access
15 Citations
8,451 Views
13 Pages

Sinterconnects: All-Copper Top-Side Interconnects Based on Copper Sinter Paste for Power Module Packaging

  • Ali Roshanghias,
  • Perla Malago,
  • Jaroslaw Kaczynski,
  • Timothy Polom,
  • Jochen Bardong,
  • Dominik Holzmann,
  • Muhammad-Hassan Malik,
  • Michael Ortner,
  • Christina Hirschl and
  • Alfred Binder

13 April 2021

Copper sinter paste has been recently established as a robust die-attach material for high -power electronic packaging. This paper proposes and studies the implementation of copper sinter paste materials to create top-side interconnects, which can su...

  • Article
  • Open Access
4 Citations
4,214 Views
15 Pages

This paper presents the design and characterisation of a novel double-sided cooling, wire-bondless half-bridge power module incorporating silver sintering technology and silicon carbide MOSFETs. Initially, the module was meticulously designed, optimi...

(This article belongs to the Section Power Electronics)
  • Article
  • Open Access
36 Citations
12,918 Views
19 Pages

27 October 2025

Wide-Bandgap (WBG) semiconductors—silicon carbide (SiC) and gallium nitride (GaN)— enable high-power-density conversion, but performance is limited by where heat is generated and how it is removed. This review links device-level loss mech...

(This article belongs to the Topic Wide Bandgap Semiconductor Electronics and Devices)