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Article

14 Citations

3,670 Views

16 Pages

Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate

Yves Mols,
Abhitosh Vais,
Sachin Yadav,
Liesbeth Witters and ,
Komal Vondkar,
Reynald Alcotte,
Marina Baryshnikova,
Guillaume Boccardi,
Niamh Waldron and
Bernardette Kunert
+ 8 authors+ 3 authors

Materials2021, 14(19), 5682;https://doi.org/10.3390/ma14195682

29 September 2021

Nano-ridge engineering (NRE) is a novel method to monolithically integrate III–V devices on a 300 mm Si platform. In this work, NRE is applied to InGaP/GaAs heterojunction bipolar transistors (HBTs), enabling hybrid III-V/CMOS technology for RF appli...

(This article belongs to the Section Advanced Nanomaterials and Nanotechnology)

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Article

48 Citations

7,342 Views

19 Pages

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Marina Baryshnikova,
Yves Mols,
Yoshiyuki Ishii,
Reynald Alcotte and ,
Han Han,
Thomas Hantschel,
Olivier Richard,
Marianna Pantouvaki,
Joris Van Campenhout and
Bernardette Kunert
+ 7 authors+ 2 authors

Crystals2020, 10(4), 330;https://doi.org/10.3390/cryst10040330

22 April 2020

Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser diodes and het...

(This article belongs to the Special Issue MOVPE Growth of Crystalline Film)

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