Special Issue "MOVPE Growth of Crystalline Film"
Deadline for manuscript submissions: 31 December 2018
It is my great pleasure to welcome submissions to this Special Issue of Crystals on metalorganic vapour phase epitaxy (MOVPE), the technology that lies at the foundation of modern semiconductor optoelectronics and related research fields and manufacturing.
According to some early UK, German and US patents, the basics of this remarkable crystal growth technology (also known under established terms such as MOCVD, OMVPE and OMCVD) have been known to specialists since at least early 1950’s. The wider interest of the research community and industry in this technology, however, was stimulated by the publications of Manasevit in the late 1960’s which coincided with a growing demand for thin compound semiconductor crystal films and booming semiconductor research.
The critical point in the development of MOVPE was the demonstration by Dupuis of MOVPE-grown hetero-structures and quantum wells with abrupt interfaces in 1977. This opened up further applications, in particular, the practical realization of semiconductor quantum devices, and attracted even greater interest to this technology. Since then, MOVPE has become a major contributor to semiconductor research. For example, MOVPE has facilitated a significant contribution to the race for blue-light emitting sources and hugely stimulated studies on ZnSe- and GaN-based compounds and related physical phenomena in semiconductors. These studies have brought the Nobel Prize in Physics to Akasaki, Amano and Nakamura in 2006, and there are other examples of a close association of MOVPE with the greatest scientific and technological developments marked by this highly prestigious award. In addition to the aforementioned semiconductor hetero-structures (originally proposed by Alferov and Kroemer, Nobel Prize in Physics 2000), one can mention quantum cascade lasers, directly derived from the pioneering studies of Leo Esaki (Nobel Prize in Physics 1973) on semiconductor superlattices, and which can be routinely grown these days by MOVPE.
The impact of MOVPE on modern civilization and our way of life is difficult to overestimate. Of particular significance is the widespread application of telecom lasers and white LEDs, which relay on high-volume manufacturing processes based largely on this technique. Nowadays, there are thousands of industrial MOVPE reactors in operation worldwide and hundreds of research groups actively studying MOVPE crystal growth or relying heavily on the technique for their wider studies. With the extreme purity of precursors available commercially, a reproducible high-precision gas delivery, abrupt reagents’ switching, and with highly informative in-situ optical process monitoring tools, MOVPE has never been a better technique to be used in semiconductor research and manufacturing.
I would like to invite you to submit manuscripts, which cover all research aspects of MOVPE growth and materials and structures grown by this technique. Manuscripts on other related technologies, like metalorganic molecular beam epitaxy, atomic layer epitaxy etc. are also welcome.
Dr. Andrey B. Krysa
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1200 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- Thin crystal film
- Semiconductor heterostructure
- Quantum well
- Quantum dot
- Materials characterization
The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.
Authors: Nikolay Baidus et al.
Title: Growth of InGaAs / GaAs / AlGaAs laser structures with quantum wells by the MOCVD method on Ge / Si substrates
Abstract: The paper studies the growth of GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed Ge buffer by MOCVD. The influence of the deviation of the substrate on the direction (001), the thickness of the Ge buffer, the use of a buffer consisting of alternating layers of AlAs and GaAs, on the structural and optical properties of the obtained structures was studied. The growth of laser structures with InGaAs strained quantum wells with a high In fraction using GaAsP compensating layers has been carried out and their properties have been investigated.