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Nuclear Physics: Effects of Radiation on Materials
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Nuclear Physics: Effects of Radiation on Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (20 December 2023) | Viewed by 3846

Special Issue Editor

Prof. Dr. Alberto Aloisio

E-Mail Website
Guest Editor
Department of Physics, Università degli Studi di Napoli Federico II, Naples, Italy
Interests: radiation detectors; radiation damage in semiconductor devices; 1/f noise; organic transistors; low-noise electronics; digital electronics

Special Issue Information

Dear Colleagues,

The effects of radiation on materials and radiation damage play a key role in the development of materials for microelectronics, space, nuclear power plant, cultural heritage, biological and clinical applications. The development and characterization of traditional, organic and hybrid radiation detectors as well as solar cells and innovative sensors also require the in-depth modeling and experimental validation of the materials’ response to radiation.

This Special Issue will focus on the state-of-the-art developments in all such topics, addressing the modeling and experimental analysis of micro- and nanostructural material changes, the impact of radiation on the macroscopic behavior of complex devices and living tissues, as well as the design and performance of innovative sensors and radiation detectors. New research articles and review articles are both invited.

Prof. Dr. Alberto Aloisio
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • radiation damage
  • defects analysis
  • innovative, organic and hybrid radiation detectors
  • radiation interaction with matter
  • materials for specific radiation environments
  • modeling of radiation effects at micro and nano scales
  • radiation effects on polymers
  • radiation effects on semiconductors, electronic devices and sensors
  • radiation effects on cultural heritage artifacts
  • biological effects of radiation

Published Papers (3 papers)

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Editorial

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1 pages, 147 KiB  
Editorial
Special Issue “Nuclear Physics: Effects of Radiation on Materials”
by Alberto Aloisio and Marcello Campajola
Materials 2022, 15(21), 7498; https://doi.org/10.3390/ma15217498 - 26 Oct 2022
Viewed by 645
Abstract
Understanding radiation damage in materials has been a topic of great interest for many years and in multiple scientific sectors [...] Full article
(This article belongs to the Special Issue Nuclear Physics: Effects of Radiation on Materials)

Research

Jump to: Editorial

11 pages, 3048 KiB  
Article
Epitaxial SiC Dosimeters and Flux Monitoring Detectors for Proton Therapy Beams
by Mara Bruzzi and Enrico Verroi
Materials 2023, 16(10), 3643; https://doi.org/10.3390/ma16103643 - 10 May 2023
Viewed by 1126
Abstract
The exceptional optoelectronic properties and high radiation resistance of epitaxial silicon carbide make this material attractive for high-energy beam dosimetry and radiation monitoring, especially when strict requirements such as high signal-to-noise ratios, high time and spatial resolutions and low detectivity levels are required. [...] Read more.
The exceptional optoelectronic properties and high radiation resistance of epitaxial silicon carbide make this material attractive for high-energy beam dosimetry and radiation monitoring, especially when strict requirements such as high signal-to-noise ratios, high time and spatial resolutions and low detectivity levels are required. A 4H-SiC Schottky diode has been characterized as a proton-flux-monitoring detector and dosimeter under proton beams for proton therapy. The diode was composed of an epitaxial film grown on 4H-SiC n+-type substrate equipped with a gold Schottky contact. The diode was embedded in a tissue-equivalent epoxy resin and then characterized in terms of capacitance vs. voltage (C-V) and current vs. voltage (I-V) characteristics in the dark in the range of 0–40 V. The dark currents at room temperature are in the order of 1 pA, while the doping and active thicknesses extracted from the C-V are 2.5 × 1015 cm−3 and 2–4 μm, respectively. Proton beam tests have been carried out at the Proton Therapy Center of the Trento Institute for Fundamental Physics and Applications (TIFPA-INFN). They have been carried out with energies and extraction currents of 83–220 MeV and 1–10 nA, respectively, as typical for proton therapy applications, corresponding to dose rates in the range of 5 mGy/s to 2.7 Gy/s. The I-V characteristics measured under proton beam irradiation at the lowest dose rate showed a typical diode photocurrent response and a signal-to-noise ratio well above 10. Investigations with null bias evidenced a very good performance in terms of the diode’s sensitivity, fast rise and decay times and response stability. The diode’s sensitivity was in agreement with the expected theoretical values, and its response was linear throughout the whole investigated dose rate range. Full article
(This article belongs to the Special Issue Nuclear Physics: Effects of Radiation on Materials)
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8 pages, 3476 KiB  
Article
Radiation Damage in Polyethylene Naphthalate Thin-Film Scintillators
by Marcello Campajola, Francesco Di Capua, Pierluigi Casolaro, Ettore Sarnelli and Alberto Aloisio
Materials 2022, 15(19), 6530; https://doi.org/10.3390/ma15196530 - 21 Sep 2022
Cited by 2 | Viewed by 1351
Abstract
This paper describes the scintillation features and the radiation damage in polyethylene naphthalate 100 µm-thick scintillators irradiated with an 11 MeV proton beam and with a 1 MeV electron beam at doses up to 15 and 85 Mrad, respectively. The scintillator emission spectrum, [...] Read more.
This paper describes the scintillation features and the radiation damage in polyethylene naphthalate 100 µm-thick scintillators irradiated with an 11 MeV proton beam and with a 1 MeV electron beam at doses up to 15 and 85 Mrad, respectively. The scintillator emission spectrum, optical transmission, light yield loss, and scintillation pulse decay times were investigated before and after the irradiation. A deep blue emission spectrum peaked at 422 nm, and fast and slow scintillation decay time constants of the order of 1–2 ns and 25–30 nm, respectively, were measured. After irradiation, transmittance showed a loss of transparency for wavelengths between 380 and 420 nm, and a light yield reduction of ~40% was measured at the maximum dose of 85 Mrad. Full article
(This article belongs to the Special Issue Nuclear Physics: Effects of Radiation on Materials)
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