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Novel Nanostructured Materials for Optoelectronic Applications
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Novel Nanostructured Materials for Optoelectronic Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Smart Materials".

Deadline for manuscript submissions: closed (20 March 2023) | Viewed by 7512

Special Issue Editors

Prof. Dr. Satyabrata Jit

E-Mail Website
Guest Editor
CRME Lab, Dept. of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi 221005, India
Interests: nanostructured materials for electronics; optoelectronics; gas sensing and biosensing applications; nanoscale CMOS transistors; microwave photonics
Dr. Santanu Das

E-Mail Website
Guest Editor
Department of Ceramic Engineering, Indian Institute of Technology (BHU), Varanasi 221005, India
Interests: functional nanomaterials; graphene; 2D metal-dichalcogenides; photonics and plasmonic nanostructures, and quantum dots, electronic; optoelectronic and energy generation and storage devices

Special Issue Information

Dear Colleagues,

Nanostructure materials have drawn considerable research attention for their applications in electronic and optoelectronic devices—such as light-emitting diodes (LEDs), laser diodes, photodetectors, transistors, light-emitting transistors, and solar cells—due to their large surface-to-volume ratios and novel electrical, optical, physical, chemical, and structural properties. Various nanostructures of III-V compounds are the key materials used for traditional optoelectronic sources and detectors. However, considerable efforts are being made to synthesize various novel nanostructured materials such as graphene, 2D metal-dichalcogenides, various 0D/2D heterostructures, various transition metal oxides nanostructures and nanocomposites, perovskites, organic semiconductors, and organic/inorganic hybrid nanocomposites to fabricate low-cost and large-area optoelectronic devices. The integration of photonic devices with well matured silicon CMOS technology is another aspect of the development of smart silicon photonics technology. Though silicon is a key material of solar cells, its large energy pay-back time (EPBT) and high processing cost have led to the possibility of using nanostructures of perovskites and other organic materials to fabricate low-cost, low-temperature, processed, large-area solar cells. In view of the above, the main objective of this Special Issue is to publish high-quality research on the theoretical, experimental and simulation-based investigations of novel nanostructured materials and their applications in optoelectronic devices for future-generation photonics technology.

Prof. Dr. Satyabrata Jit
Dr. Santanu Das
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 0D/1D/2D/3D optoelectronic materials and devices
  • metal oxides nanostructures
  • flexible optoelectronics
  • nano-scale hetero-structured optoelectronic materials and devices
  • light-emitting diodes (LEDs)
  • photodetectors
  • solar cells
  • silicon photonics
  • thin film optoelectronics

Published Papers (4 papers)

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Research

19 pages, 2602 KiB  
Article
Plasmonic Nanodomains Decorated on Two-Dimensional Oxide Semiconductors for Photonic-Assisted CO2 Conversion
by Mohammad Karbalaei Akbari, Nasrin Siraj Lopa, Jihae Park and Serge Zhuiykov
Materials 2023, 16(10), 3675; https://doi.org/10.3390/ma16103675 - 11 May 2023
Cited by 1 | Viewed by 1484
Abstract
Plasmonic nanostructures ensure the reception and harvesting of visible lights for novel photonic applications. In this area, plasmonic crystalline nanodomains decorated on the surface of two-dimensional (2D) semiconductor materials represent a new class of hybrid nanostructures. These plasmonic nanodomains activate supplementary mechanisms at [...] Read more.
Plasmonic nanostructures ensure the reception and harvesting of visible lights for novel photonic applications. In this area, plasmonic crystalline nanodomains decorated on the surface of two-dimensional (2D) semiconductor materials represent a new class of hybrid nanostructures. These plasmonic nanodomains activate supplementary mechanisms at material heterointerfaces, enabling the transfer of photogenerated charge carriers from plasmonic antennae into adjacent 2D semiconductors and therefore activate a wide range of visible-light assisted applications. Here, the controlled growth of crystalline plasmonic nanodomains on 2D Ga2O3 nanosheets was achieved by sonochemical-assisted synthesis. In this technique, Ag and Se nanodomains grew on 2D surface oxide films of gallium-based alloy. The multiple contribution of plasmonic nanodomains enabled the visible-light-assisted hot-electron generation at 2D plasmonic hybrid interfaces, and therefore considerably altered the photonic properties of the 2D Ga2O3 nanosheets. Specifically, the multiple contribution of semiconductor–plasmonic hybrid 2D heterointerfaces enabled efficient CO2 conversion through combined photocatalysis and triboelectric-activated catalysis. The solar-powered acoustic-activated conversion approach of the present study enabled us to achieve the CO2 conversion efficiency of more than 94% in the reaction chambers containing 2D Ga2O3-Ag nanosheets. Full article
(This article belongs to the Special Issue Novel Nanostructured Materials for Optoelectronic Applications)
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11 pages, 4118 KiB  
Article
Charge Transport Enhancement in BiVO4 Photoanode for Efficient Solar Water Oxidation
by Zhidong Li, Zhibin Xie, Weibang Li, Hafiz Sartaj Aziz, Muhammad Abbas, Zhuanghao Zheng, Zhenghua Su, Ping Fan, Shuo Chen and Guangxing Liang
Materials 2023, 16(9), 3414; https://doi.org/10.3390/ma16093414 - 27 Apr 2023
Cited by 1 | Viewed by 1299
Abstract
Photoelectrochemical (PEC) water splitting in a pH-neutral electrolyte has attracted more and more attention in the field of sustainable energy. Bismuth vanadate (BiVO4) is a highly promising photoanode material for PEC water splitting. Additionally, cobaltous phosphate (CoPi) is a material that [...] Read more.
Photoelectrochemical (PEC) water splitting in a pH-neutral electrolyte has attracted more and more attention in the field of sustainable energy. Bismuth vanadate (BiVO4) is a highly promising photoanode material for PEC water splitting. Additionally, cobaltous phosphate (CoPi) is a material that can be synthesized from Earth’s rich materials and operates stably in pH-neutral conditions. Herein, we propose a strategy to enhance the charge transport ability and improve PEC performance by electrodepositing the in situ synthesis of a CoPi layer on the BiVO4. With the CoPi co-catalyst, the water oxidation reaction can be accelerated and charge recombination centers are effectively passivated on BiVO4. The BiVO4/CoPi photoanode shows a significantly enhanced photocurrent density (Jph) and applied bias photon-to-current efficiency (ABPE), which are 1.8 and 3.2 times higher than those of a single BiVO4 layer, respectively. Finally, the FTO/BiVO4/CoPi photoanode displays a photocurrent density of 1.39 mA cm−2 at 1.23 VRHE, an onset potential (Von) of 0.30 VRHE, and an ABPE of 0.45%, paving a potential path for future hydrogen evolution by solar-driven water splitting. Full article
(This article belongs to the Special Issue Novel Nanostructured Materials for Optoelectronic Applications)
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15 pages, 3051 KiB  
Article
Performance Improvement of Quantum Dot Light-Emitting Diodes Using a ZnMgO Electron Transport Layer with a Core/Shell Structure
by Ye-Bin Eun, Gyeong-Pil Jang, Ji-Hun Yang, Su-Young Kim, Young-Bin Chae, Mi-Young Ha, Dae-Gyu Moon and Chang-Kyo Kim
Materials 2023, 16(2), 600; https://doi.org/10.3390/ma16020600 - 8 Jan 2023
Cited by 3 | Viewed by 2121
Abstract
Highly efficient and all-solution processed quantum dot light-emitting diodes (QLEDs) with high performance are demonstrated by employing ZnMgO nanoparticles (NPs) with core/shell structure used as an electron transport layer (ETL). Mg-doping in ZnO NPs exhibits a different electronic structure and degree of electron [...] Read more.
Highly efficient and all-solution processed quantum dot light-emitting diodes (QLEDs) with high performance are demonstrated by employing ZnMgO nanoparticles (NPs) with core/shell structure used as an electron transport layer (ETL). Mg-doping in ZnO NPs exhibits a different electronic structure and degree of electron mobility. A key processing step for synthesizing ZnMgO NPs with core/shell structure is adding Mg in the solution in addition to the remaining Mg and Zn ions after the core formation process. This enhanced Mg content in the shell layer compared with that of the core X-ray photoelectron spectroscopy showed a higher number of oxygen vacancies for the ZnMgO core/shell structure, thereby enhancing the charge balance in the emitting layer and improving device efficiency. The QLED incorporating the as synthesized ZnMgO NP core/shell A exhibited a maximum luminance of 55,137.3 cd/m2, maximum current efficiency of 58.0 cd/A and power efficiency of 23.3 lm/W. The maximum current efficiency and power efficiency of the QLED with ZnMgO NP core/shell A improved by as much as 156.3% and 113.8%, respectively, compared to the QLED with a Zn0.9Mg0.1O NP ETL, thus demonstrating the benefits of ZnMgO NPs with the specified core/shell structure. Full article
(This article belongs to the Special Issue Novel Nanostructured Materials for Optoelectronic Applications)
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12 pages, 2990 KiB  
Article
Development of a Highly Efficient Optoelectronic Device Based on CuFeO2/CuO/Cu Composite Nanomaterials
by Fatemah H. Alkallas, Amira Ben Gouider Trabelsi, Tahani A. Alrebdi, Ashour M. Ahmed and Mohamed Rabia
Materials 2022, 15(19), 6857; https://doi.org/10.3390/ma15196857 - 2 Oct 2022
Cited by 9 | Viewed by 1828
Abstract
Herein, an optoelectronic device synthesized from a CuFeO2/CuO/Cu nanocomposite was obtained through the direct combustion of Cu foil coated with Fe2O3 nanomaterials. The chemical, morphological, and optical properties of the nanocomposite were examined via different techniques, such as [...] Read more.
Herein, an optoelectronic device synthesized from a CuFeO2/CuO/Cu nanocomposite was obtained through the direct combustion of Cu foil coated with Fe2O3 nanomaterials. The chemical, morphological, and optical properties of the nanocomposite were examined via different techniques, such as XRD, XPS, TEM, SEM, and UV/Vis spectrophotometer. The optical reflectance demonstrated a great enhancement in the CuFeO2 optical properties compared to CuO nanomaterials. Such enhancements were clearly distinguished through the bandgap values, which varied between 1.35 and 1.38 eV, respectively. The XRD and XPS analyses confirmed the chemical structure of the prepared materials. The produced current density (Jph) was studied in dark and light conditions, thereby confirming the obtained optoelectronic properties. The Jph dependency to monochromatic wavelength was also investigated. The Jph value was equal to 0.033 mA·cm−2 at 390 nm, which decreased to 0.031 mA·cm−2 at 508 nm, and then increased to 0.0315 mA·cm−2 at 636 nm. The light intensity effects were similarly inspected. The Jph values rose when the light intensities were augmented from 25 to 100 mW·cm−2 to reach 0.031 and 0.05 mA·cm−2, respectively. The photoresponsivity (R) and detectivity (D) values were found at 0.33 mA·W−1 and 7.36 × 1010 Jones at 390 nm. The produced values confirm the high light sensitivity of the prepared optoelectronic device in a broad optical region covering UV, Vis, and near IR, with high efficiency. Further works are currently being designed to develop a prototype of such an optoelectronic device so that it can be applied in industry. Full article
(This article belongs to the Special Issue Novel Nanostructured Materials for Optoelectronic Applications)
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