Advances in Nanowires: Growth, Properties and Applications
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced Nanomaterials and Nanotechnology".
Deadline for manuscript submissions: closed (20 June 2023) | Viewed by 2051
Special Issue Editor
Interests: semiconductor materials; nanowires, molecular beam epitaxy; optoelectronic devices; light-emitting diodes; lasers; artificial photosynthesis
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
We are pleased to announce a new Special Issue of Materials entitled “Advances in Nanowires: Growth, Properties and Applications”. The past decade has witnessed a continuous boom of research in nanowires, not only from pure scientific interest, but also for pushing nanotechnology for practical device applications. While phenomenal progress has been made in nanowire research with various material systems, this Special Issue intends to capture the exciting process in semiconductor group-III nitride nanowires throughout the process, from materials synthesis to device applications.
Group-III nitrides include InN, GaN, and AlN. The uniqueness of this material system is the ultrawide, direct, and tunable bandgaps from around 0.6 eV all the way to around 6 eV, making them highly suitable for both photonic and electronic device applications. The additional merits of this material system include high mechanical strength and high chemical inertness. Research addressing group-III nitride nanowires rose in the 2000s, where they were synthesized by chemical methods. In the past decade, large-scale epitaxial tools have been utilized in the synthesis of group-III nitride nanowires, which makes it possible to produce wafer-scale devices which are more compatible with modern semiconductor device processing. A wide range of substrates have been used, such as Si, diamond, graphene, and flexible metal foils. A wide range of photonic devices have also been developed, including white and color-tunable LEDs and lasers, UV LEDs and lasers, near-infrared LEDs and photodetectors, as well as uses in artificial photocatalysts. Moreover, by using selective area epitaxy, novel surface-emitting lasers and high-performance micro-LEDs have been demonstrated in recent years. While this Special Issue mainly focuses on experiments, theoretical studies on nanowire structures showing interesting physical properties will also be considered for submission.
Dr. Songrui Zhao
Guest Editor
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Keywords
- group-III nitrides
- nanowires
- epitaxy
- flexible
- photonics
- light-emitting diodes
- lasers
- photodetectors
- artificial photocatalysts
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