Research in Magnetoresistance of Magnetic Materials

A special issue of Magnetochemistry (ISSN 2312-7481). This special issue belongs to the section "Magnetic Materials".

Deadline for manuscript submissions: closed (29 February 2024) | Viewed by 686

Special Issue Editors


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Guest Editor
School of Physics, Hefei University of Technology, Hefei, China
Interests: 2D magnetism; low-dimensional quantum materials; multifer-roic; correlated electron system; synchrotron radiation charac-terizations
High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, China
Interests: spintronics; topological magnetisms; magnetic sensors

Special Issue Information

Dear Colleagues,

In recent years, novel magnetic materials, artificial heterostructures, and low-dimensional magnets have been extensively developed for novel spintronic devices to go beyond the scope of conventional magnetic physics. Understanding spin‒transport properties and mechanisms and the novel spintronic devices with them is still very challenging. This Special Issue focuses on the recent great achievements in anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and colossal magnetoresistance (CMR) in the metallic magnetic thin films and heterostructures, and on promising two-dimensional magnets. However, this Special Issue is not limited to this scope. Studies on novel low-dimensional magnetism, topological magnetic states, antiferromagnetic spintronics, and novel spintronic devices are also welcomed. We provide a platform to present the latest progress to promote the development of the information logics and storage technologies using magnetic means. We cordially invite colleagues to submit original research articles or reviews that will fit (or beyond) in one of the topics listed below:

  • Anisotropic magnetoresistance (AMR);
  • Giant magnetoresistance (GMR);
  • Tunneling magnetoresistance (TMR);
  • Colossal magnetoresistance (CMR);
  • Magnetic thin films and devices;
  • 2D magnetism;
  • Antiferro-magnetic spintronics;
  • Magnetic tunnel junction;
  • Hall effect; topological magnetism;
  • Multiferroic thin film and devices;
  • Novel electronic states in the magnetic materials;
  • XMCD and XAS characterizations;
  • Magnetic simulations and theory.

Dr. Yuanjun Yang
Dr. Kang Wang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Magnetochemistry is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2700 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • magnetoresistance
  • anisotropic magnetoresistance
  • suspended graphene
  • transport properties
  • 2D metal

Published Papers

There is no accepted submissions to this special issue at this moment.
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