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Inorganics
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Advanced Inorganic Semiconductor Materials, 3rd Edition
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Advanced Inorganic Semiconductor Materials, 3rd Edition

A special issue of Inorganics (ISSN 2304-6740). This special issue belongs to the section "Inorganic Materials".

Deadline for manuscript submissions: 31 October 2025 | Viewed by 1274

Special Issue Editors

Dr. Sake Wang

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Guest Editor
College of Science, Jinling Institute of Technology, Nanjing 211169, China
Interests: 2D materials; environment; valleytronics; spintronics; topological insulators; electron transport; optoelectronics; photocatalyst
Special Issues, Collections and Topics in MDPI journals
Dr. Nguyen Tuan Hung

E-Mail Website
Guest Editor
Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Miyagi 980-0845, Japan
Interests: thermoelectricity; artificial muscles; nanomechanics; first-principles calculations
Special Issues, Collections and Topics in MDPI journals
Dr. Minglei Sun

E-Mail Website
Guest Editor
Material Science Engineering, The University of Texas at Dallas, Richardson, TX, USA
Interests: first-principles computational study of 2D materials and their heterostructures; particularly for photocatalyst applications
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Building upon the success of the first and second editions, which published over 10 papers, we continue onto the 3rd edition. The information technology revolution has been based decisively on the development and application of inorganic semiconductors. Conventional devices utilize bulk semiconductors in which charge carriers are free to move in all three spatial directions. For example, silicon forms the basis of the vast majority of electronic devices, whilst compound semiconductors such as gallium arsenide (GaAs) are used for many optoelectronic applications. Recently, with the global boom in graphene research, more and more atomically thin two-dimensional (2D) inorganic materials have gained significant interest. Besides their promising applications in various ultrathin, transparent and flexible nanodevices, 2D materials could also serve as one of the ideal models for establishing clear structure−property relationships in the field of solid-state physics and nanochemistry. 

Despite the significant advances in the recent decade, both opportunities and challenges still remain in this field. This Special Issue aims to highlight the most current research and ideas in inorganic semiconductors, especially semiconductors based on 2D materials. In this Special Issue, original research articles and reviews are welcome. Research areas include, but are not limited to, the experimental fabrication and characterization, as well as the electronic, electrical, magnetic, optoelectronic and thermal properties of inorganic semiconductors.

As will be seen in this Special Issue, inorganic semiconductors exhibit a wide range of new and unusual properties, which can be employed to fabricate improved and novel electronic and electro-optical devices.

We look forward to receiving your contributions.

Dr. Sake Wang
Dr. Nguyen Tuan Hung
Dr. Minglei Sun
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Inorganics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2200 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • information technology
  • inorganic semiconductors
  • two-dimensional materials
  • graphene
  • transition-metal dichalcogenides
  • fabrication
  • characterization
  • electronic properties
  • optoelectronic properties
  • thermal properties

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Published Papers (3 papers)

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Research

12 pages, 2447 KiB  
Article
Mechanical Modelling of Integration and Debonding Process of Ultra-Thin Inorganic Chips
by Kunwei Zheng, Shen Dai, Zhiyao Ling and Han Gong
Inorganics 2025, 13(7), 234; https://doi.org/10.3390/inorganics13070234 - 10 Jul 2025
Abstract
The research on ultra-thin inorganic chips is an important field in the development of inorganic flexible electronics. By thinning the inorganic (mainly silicon-based) chip to less than 50 μm, it will gain a certain degree of flexibility. After the ultra-thin chip is integrated [...] Read more.
The research on ultra-thin inorganic chips is an important field in the development of inorganic flexible electronics. By thinning the inorganic (mainly silicon-based) chip to less than 50 μm, it will gain a certain degree of flexibility. After the ultra-thin chip is integrated into the flexible substrate, it is bent repeatedly during the operation of the system. When the bending angle is excessively large, the chip and substrate will debond, or the chip will break. In this process, whether the chip can be stably adhered to the substrate depends on many factors, and debonding can only be reduced by continuously adjusting the process parameters. From an energy method perspective, this study divides the bending process of flexible silicon-based chips and flexible films into two states: debonding and non-debonding. A debonding mechanical model of flexible chips is established, and the regulatory relationship between the adhesion coefficient between the chip and film, chip geometric size, and material parameters was established. Experiments were also conducted to verify the relevant theoretical results. The theoretical results show that the risk of chip debonding decreases with a reduction in chip thickness, an increase in interface adhesion, and an increase in bending radius. Improving the interface adhesion during the bending process can effectively stabilize the adhesion of flexible chips. This paper provides a theoretical basis for the integration and bending of ultra-thin flexible chips and flexible substrates, promoting the practical assembly and application of ultra-thin chips. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 3rd Edition)
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18 pages, 2436 KiB  
Article
Photoelectrochemical and Photocatalytic Properties of SnS/TiO2 Heterostructure Thin Films Prepared by Magnetron Sputtering Method
by Yaoxin Ding, Jiahao Leng, Mingyang Zhang and Jie Shen
Inorganics 2025, 13(7), 208; https://doi.org/10.3390/inorganics13070208 - 20 Jun 2025
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Abstract
Tin(II) sulfide(SnS)/titanium(IV) oxide (TiO2) heterostructure thin films were prepared by radio-frequency magnetron sputtering to investigate the enhancement effect of the formed heterojunction on the photocatalytic performance. By adjusting the sputtering time to vary the thickness of the SnS layer, the crystallinity [...] Read more.
Tin(II) sulfide(SnS)/titanium(IV) oxide (TiO2) heterostructure thin films were prepared by radio-frequency magnetron sputtering to investigate the enhancement effect of the formed heterojunction on the photocatalytic performance. By adjusting the sputtering time to vary the thickness of the SnS layer, the crystallinity and light-absorption properties of the light-absorbing layer and the quality of the heterojunction interface were effectively controlled, thereby optimizing the fabrication process of the heterojunction. It was found that when the SnS layer thickness was 244 nm and the TiO2 layer thickness was 225 nm, the heterostructure film exhibited optimal photoelectrochemical performance, generating the highest photocurrent of 3.03 µA/cm2 under visible light, which was 13.8 times that of a pure TiO2 film and 2.4 times that of a pure SnS film of the same thickness. Additionally, it demonstrated the highest degradation efficiency for methylene blue dye. The improved photoelectrochemical performance of the SnS/TiO2 heterostructure film can be primarily attributed to the following: (1) the incorporation of narrow-bandgap SnS effectively broadens the light-absorption range, improving visible-light harvesting; (2) the staggered band alignment between SnS and TiO2 forms a type-II heterojunction, significantly enhancing the charge carrier separation and transport efficiency. The present work demonstrated the feasibility of magnetron sputtering for constructing high-quality SnS/TiO2 heterostructures, providing insights into the design and fabrication of photocatalytic heterojunctions. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 3rd Edition)
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25 pages, 4788 KiB  
Article
Insight into the Oxygen-Sensing Mechanisms of TiO2–CeO2 Mixed Oxides Treated in a High-Energy Ball Mill: An XPS Analysis
by Jelena N. Stevanović, Ana G. Silva, Nenad Bundaleski, Dana Vasiljević-Radović, Milija Sarajlić, Orlando M. N. D. Teodoro and Srđan P. Petrović
Inorganics 2025, 13(5), 159; https://doi.org/10.3390/inorganics13050159 - 9 May 2025
Viewed by 567
Abstract
This study explored the oxygen-sensing mechanism of CeO2 modified with TiO2 via high-energy ball milling at different speeds. Different characterization techniques were employed to investigate the obtained materials. Quantitative surface analysis by X-ray photoelectron spectroscopy was conducted to elucidate their sensitivity [...] Read more.
This study explored the oxygen-sensing mechanism of CeO2 modified with TiO2 via high-energy ball milling at different speeds. Different characterization techniques were employed to investigate the obtained materials. Quantitative surface analysis by X-ray photoelectron spectroscopy was conducted to elucidate their sensitivity mechanisms and assess the impact of the introduction of TiO2. A comparable concentration of oxygen vacancies was found in the samples milled at 350 and 450 rpm. Electrical measurements conducted at temperatures lower than required for semiconductor gas sensors revealed the higher sensitivity of these two samples in comparison to pure CeO2 at an oxygen concentration above 10%. In contrast, the samples derived from precursors milled at the highest speed exhibited the lowest sensitivity. This may be linked to a slight decrease in the vacancy concentration and the presence of a differentially charged carbon-containing phase. Eventually, the C 1s line provided significant insight into the surface characteristics of the materials. The uniform and non-uniform charging found for pure TiO2 and CeO2, respectively, along with the high charging of CeO2, suggest that TiO2 promotes the contact between the sensing layer and the overlayer. Sensor testing showed the significantly lower resistance of mixed oxides in comparison to CeO2, which increases the utility of metal oxide-based sensors. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 3rd Edition)
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