Advanced Inorganic Semiconductor Materials, 3rd Edition

A special issue of Inorganics (ISSN 2304-6740). This special issue belongs to the section "Inorganic Materials".

Deadline for manuscript submissions: 31 October 2025 | Viewed by 558

Special Issue Editors

Special Issue Information

Dear Colleagues,

Building upon the success of the first and second editions, which published over 10 papers, we continue onto the 3rd edition. The information technology revolution has been based decisively on the development and application of inorganic semiconductors. Conventional devices utilize bulk semiconductors in which charge carriers are free to move in all three spatial directions. For example, silicon forms the basis of the vast majority of electronic devices, whilst compound semiconductors such as gallium arsenide (GaAs) are used for many optoelectronic applications. Recently, with the global boom in graphene research, more and more atomically thin two-dimensional (2D) inorganic materials have gained significant interest. Besides their promising applications in various ultrathin, transparent and flexible nanodevices, 2D materials could also serve as one of the ideal models for establishing clear structure−property relationships in the field of solid-state physics and nanochemistry. 

Despite the significant advances in the recent decade, both opportunities and challenges still remain in this field. This Special Issue aims to highlight the most current research and ideas in inorganic semiconductors, especially semiconductors based on 2D materials. In this Special Issue, original research articles and reviews are welcome. Research areas include, but are not limited to, the experimental fabrication and characterization, as well as the electronic, electrical, magnetic, optoelectronic and thermal properties of inorganic semiconductors.

As will be seen in this Special Issue, inorganic semiconductors exhibit a wide range of new and unusual properties, which can be employed to fabricate improved and novel electronic and electro-optical devices.

We look forward to receiving your contributions.

Dr. Sake Wang
Dr. Nguyen Tuan Hung
Dr. Minglei Sun
Guest Editors

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Keywords

  • information technology
  • inorganic semiconductors
  • two-dimensional materials
  • graphene
  • transition-metal dichalcogenides
  • fabrication
  • characterization
  • electronic properties
  • optoelectronic properties
  • thermal properties

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Published Papers (1 paper)

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Research

25 pages, 4788 KiB  
Article
Insight into the Oxygen-Sensing Mechanisms of TiO2–CeO2 Mixed Oxides Treated in a High-Energy Ball Mill: An XPS Analysis
by Jelena N. Stevanović, Ana G. Silva, Nenad Bundaleski, Dana Vasiljević-Radović, Milija Sarajlić, Orlando M. N. D. Teodoro and Srđan P. Petrović
Inorganics 2025, 13(5), 159; https://doi.org/10.3390/inorganics13050159 - 9 May 2025
Viewed by 293
Abstract
This study explored the oxygen-sensing mechanism of CeO2 modified with TiO2 via high-energy ball milling at different speeds. Different characterization techniques were employed to investigate the obtained materials. Quantitative surface analysis by X-ray photoelectron spectroscopy was conducted to elucidate their sensitivity [...] Read more.
This study explored the oxygen-sensing mechanism of CeO2 modified with TiO2 via high-energy ball milling at different speeds. Different characterization techniques were employed to investigate the obtained materials. Quantitative surface analysis by X-ray photoelectron spectroscopy was conducted to elucidate their sensitivity mechanisms and assess the impact of the introduction of TiO2. A comparable concentration of oxygen vacancies was found in the samples milled at 350 and 450 rpm. Electrical measurements conducted at temperatures lower than required for semiconductor gas sensors revealed the higher sensitivity of these two samples in comparison to pure CeO2 at an oxygen concentration above 10%. In contrast, the samples derived from precursors milled at the highest speed exhibited the lowest sensitivity. This may be linked to a slight decrease in the vacancy concentration and the presence of a differentially charged carbon-containing phase. Eventually, the C 1s line provided significant insight into the surface characteristics of the materials. The uniform and non-uniform charging found for pure TiO2 and CeO2, respectively, along with the high charging of CeO2, suggest that TiO2 promotes the contact between the sensing layer and the overlayer. Sensor testing showed the significantly lower resistance of mixed oxides in comparison to CeO2, which increases the utility of metal oxide-based sensors. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 3rd Edition)
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