Advanced Inorganic Semiconductor Materials, 2nd Edition

A special issue of Inorganics (ISSN 2304-6740). This special issue belongs to the section "Inorganic Materials".

Deadline for manuscript submissions: closed (31 January 2025) | Viewed by 21325

Special Issue Editors

Special Issue Information

Dear Colleagues,

The information technology revolution has been based decisively on the development and application of inorganic semiconductors. Conventional devices utilize bulk semiconductors in which charge carriers are free to move in all three spatial directions. For example, silicon forms the basis of most electronic devices, whilst compound semiconductors such as gallium arsenide (GaAs) are used for many optoelectronic applications. Recently, with the global boom in graphene research, more and more atomically thin two-dimensional (2D) inorganic materials have gained significant interest. Besides their promising applications in various ultrathin, transparent and flexible nanodevices, 2D materials could also serve as ideal models for establishing clear structure−property relationships in the field of solid-state physics and nanochemistry.

Despite the significant advances in the previous decade, opportunities and challenges remain in this field. This Special Issue aims to highlight the most current research and ideas in inorganic semiconductors, especially semiconductors based on 2D materials. In this Special Issue, original research articles and reviews are welcome. Research areas include, but are not limited to, the experimental fabrication and characterization, as well as the electronic, electrical, magnetic, optoelectronic and thermal properties of inorganic semiconductors.

As will be seen in this Special Issue, inorganic semiconductors exhibit a wide range of new and unusual properties, which can be employed to fabricate improved and novel electronic and electro-optical devices. We look forward to receiving your contributions.

Dr. Sake Wang
Dr. Minglei Sun
Dr. Nguyen Tuan Hung
Guest Editors

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Keywords

  • information technology
  • inorganic semiconductors
  • two-dimensional materials
  • graphene
  • transition-metal dichalcogenides
  • fabrication
  • characterization
  • electronic properties
  • optoelectronic properties
  • thermal properties

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Published Papers (12 papers)

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Editorial

Jump to: Research, Review

5 pages, 156 KiB  
Editorial
Advanced Inorganic Semiconductor Materials, 2nd Edition
by Sake Wang, Minglei Sun and Nguyen Tuan Hung
Inorganics 2025, 13(5), 163; https://doi.org/10.3390/inorganics13050163 - 14 May 2025
Viewed by 59
Abstract
Building upon our previous edition [...] Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)

Research

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18 pages, 4833 KiB  
Article
Achieving Ultralong Room-Temperature Phosphorescence in Two-Dimensional Metal-Halide Perovskites by Tuning Alkyl Chain Length
by Suqin Wang, Hui Zhu, Ming Sheng, Bo Shao, Yu He, Zhuang Liu, Min Li and Guangtao Zhou
Inorganics 2025, 13(4), 108; https://doi.org/10.3390/inorganics13040108 - 1 Apr 2025
Viewed by 257
Abstract
Two-dimensional (2D) metal-halide perovskites with highly efficient room-temperature phosphorescence (RTP) are rare due to their complex structures and intricate intermolecular interactions. In this study, by varying the alkyl chain length in organic amines, we synthesized two 2D metal-halide perovskites, namely 4-POMACC and 4-POEACC, [...] Read more.
Two-dimensional (2D) metal-halide perovskites with highly efficient room-temperature phosphorescence (RTP) are rare due to their complex structures and intricate intermolecular interactions. In this study, by varying the alkyl chain length in organic amines, we synthesized two 2D metal-halide perovskites, namely 4-POMACC and 4-POEACC, both of which exhibit significant RTP emission. Notably, 4-POMACC demonstrates a stronger green RTP emission with a significantly longer lifetime (254 ms) and a higher photoluminescence quantum yield (9.5%) compared to 4-POEACC. A thorough investigation of structural and optical properties reveals that shorter alkyl chains can enhance the optical performance due to reduced molecular vibrations and more effective exciton recombination. Computational calculations further show that the smaller energy gap between S1 and Tn in 4-POMA facilitates intersystem crossing, thereby improving RTP performance. Based on their remarkable phosphorescence properties, we demonstrated their applications in information encryption. This work offers a novel design strategy that could inspire the development of next-generation RTP materials. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
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13 pages, 3375 KiB  
Article
Effect of Deposition Temperature and Thermal Annealing on the Properties of Sputtered NiOx/Si Heterojunction Photodiodes
by Roumen Nedev, David Mateos-Anzaldo, Eddue Osuna-Escalante, Oscar Perez-Landeros, Mario Curiel-Alvarez, Esteban Osorio-Urquizo, Jhonathan Castillo-Saenz, Javier Lopez-Medina, Benjamin Valdez-Salas and Nicola Nedev
Inorganics 2025, 13(1), 11; https://doi.org/10.3390/inorganics13010011 - 3 Jan 2025
Viewed by 877
Abstract
NiOx is a p-type semiconductor with excellent stability, which makes it interesting for a wide range of applications. Broadband photodetectors with high responsivity (R) were fabricated by depositing r.f.-sputtered NiOx layers on n-Si at room temperature (RT), 50 °C [...] Read more.
NiOx is a p-type semiconductor with excellent stability, which makes it interesting for a wide range of applications. Broadband photodetectors with high responsivity (R) were fabricated by depositing r.f.-sputtered NiOx layers on n-Si at room temperature (RT), 50 °C and 100 °C. In self-powered mode the RT diodes have R between 0.95 and 0.39 A/W for wavelengths between 365 and 635 nm, while at a reverse bias of −4 V, the responsivity increases to values between 22 A/W and 10.7 A/W for wavelengths in the same range. The increase of the deposition temperature leads to a decrease of R but also to a smaller reverse dark current. Thus, the 100 °C photodiodes might be more appropriate for applications where high responsivity is required, because of their smaller power consumption compared to the RT diodes. In addition, it was found that the increase of the deposition temperature leads to an increase of the diodes’ series resistance and the resistivity of NiOx. The effect of Rapid Thermal Annealing (RTA) on the properties of the photodiodes was studied. Annealing at 550 °C for 6 min leads to much higher responsivity compared to R of diodes with as-deposited NiOx. However, a disadvantage of the annealed diode is that the reverse current depends on the amplitude and polarity of previously applied bias voltage. The higher responsivity of the RTA photodiodes makes them useful as light sensors. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
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12 pages, 4774 KiB  
Article
A Novel TiO2-Cuttlebone Photocatalyst for Highly Efficient Catalytic Degradation of Tetracycline Hydrochloride
by Qing Li, Penghui Liu, Huizhen Lin, Hun Xue and Jingyun Mao
Inorganics 2024, 12(12), 319; https://doi.org/10.3390/inorganics12120319 - 10 Dec 2024
Viewed by 792
Abstract
The harmful effects of antibiotics on aquatic environments have become a growing concern of modern society. Developing high-performance photocatalysts capable of degrading antibiotics under solar light is, therefore, crucial. In this study, TiO2-cuttlebone composites are prepared via the sol–gel method, to [...] Read more.
The harmful effects of antibiotics on aquatic environments have become a growing concern of modern society. Developing high-performance photocatalysts capable of degrading antibiotics under solar light is, therefore, crucial. In this study, TiO2-cuttlebone composites are prepared via the sol–gel method, to produce carbonate radicals (•CO3) under solar light irradiation. The •CO3 radicals exhibit high selectivity for the degradation of tetracycline hydrochloride (TC). Compared to TiO2 alone, the TiO2-cuttlebone composite demonstrates excellent solar-driven photocatalytic activity for TC degradation in both freshwater and seawater. The reaction pathways of TC degradation in seawater are elucidated using HPLC-MS/MS analysis. Moreover, a TiO2-cuttlebone self-suspending photocatalyst device is fabricated using 3D printing technology and low-temperature deposition methods, with aluminum–plastic (AP) as a substrate. This innovative device is easily recyclable from photocatalytic solutions while maintaining high stability, making it highly desirable for practical applications. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
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12 pages, 5416 KiB  
Article
Tunable Electronic and Magnetic Properties of 3d Transition Metal Atom-Intercalated Transition Metal Dichalcogenides: A Density Functional Theory Study
by Yujie Liu, Guang Yang, Zhiwen He, Yanbiao Wang, Xianghong Niu, Sake Wang, Yongjun Liu and Xiuyun Zhang
Inorganics 2024, 12(9), 237; https://doi.org/10.3390/inorganics12090237 - 29 Aug 2024
Cited by 1 | Viewed by 1334
Abstract
Currently, intercalation has become an effective way to modify the fundamental properties of two-dimensional (2D) van der Waals (vdW) materials. Using density functional theory, we systematically investigated the structures and electronic and magnetic properties of bilayer transition metal dichalcogenides (TMDs) intercalated with 3 [...] Read more.
Currently, intercalation has become an effective way to modify the fundamental properties of two-dimensional (2D) van der Waals (vdW) materials. Using density functional theory, we systematically investigated the structures and electronic and magnetic properties of bilayer transition metal dichalcogenides (TMDs) intercalated with 3d TM atoms (TM = Sc–Ni), TM@BL_MS2 (M = Mo, V). Our results demonstrate that all the studied TM@BL_MS2s are of high stability, with large binding energies and high diffusion barriers of TM atoms. Interestingly, most TM@BL_MoS2s and TM@BL_VS2s are found to be stable ferromagnets. Among them, TM@BL_MoS2s (TM = Sc, Ti, Fe, Co) are ferromagnetic metals, TM@BL_MoS2 (TM = V, Cr) and TM@BL_VS2 (TM = Sc, V) are ferromagnetic half-metals, and the remaining systems are found to be ferromagnetic semiconductors. Exceptions are found for Ni@BL_MoS2 and Cr@BL_VS2, which are nonmagnetic semiconductors and ferrimagnetic half-metals, respectively. Further investigations reveal that the electromagnetic properties of TM@BL_MoS2 are significantly influenced by the concentration of intercalated TM atoms. Our study demonstrates that TM atom intercalation is an effective approach for manipulating the electromagnetic properties of two-dimensional materials, facilitating their potential applications in spintronic devices. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
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10 pages, 3745 KiB  
Article
Polysilane–Barium Titanate Polymeric Composite Obtained through Ultrasonication
by Răzvan Rotaru, Maria Emiliana Fortună, Elena Ungureanu and Liviu Sacarescu
Inorganics 2024, 12(8), 213; https://doi.org/10.3390/inorganics12080213 - 7 Aug 2024
Viewed by 1365
Abstract
This work describes the synthesis of a polysilane (PSH)–barium titanate (BT) ferroelectric polymer composite that keeps stable in the presence of ultraviolet light (UV). To evaluate the stability in the presence of UV radiation and the mechanism of interaction between the PSH matrix [...] Read more.
This work describes the synthesis of a polysilane (PSH)–barium titanate (BT) ferroelectric polymer composite that keeps stable in the presence of ultraviolet light (UV). To evaluate the stability in the presence of UV radiation and the mechanism of interaction between the PSH matrix and BT, FTIR measurements were carried out. The UV/VIS absorption measurement reveals that PSH absorbs strongly in the ultraviolet range, while the composite behaves similarly to BT. Although PSH is a semiconductor, the dielectric spectrometry analysis determined that BT is a ferroelectric material due to its high dielectric constant and low dielectric losses. In contrast to the polymer matrix, the composite polymer has a greater dielectric constant and a lower loss permittivity. PSH is a semiconductor, as indicated by its electrical conductivity of 10−5 S/cm; nevertheless, the UV-irradiated polymer has antistatic properties (10−8 S/cm). Irradiated or not, the polymer composite is a semiconductor, with conductivity of 10−6 S/cm, significantly lower than that of PSH. The interaction with electromagnetic radiation indicates electromagnetic shielding behavior for both BT (highest absorption magnitude of −57 dB) and the polymer composite (maximum absorption magnitudes range from 8.4 to −15.2 dB). Based on these research results, the novel composite with specific characteristics may be used in electronic applications in UV-irradiated conditions. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
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14 pages, 4575 KiB  
Article
Synthesis and Characterization of Broccoli-like Ag/Cu2O Nanostructures on ZnO Nanowires Using the Plasma–Liquid Interaction Method
by Phung Thi Thu, Ta Ngoc Bach, Le Thi Hong Phong, Do Hoang Tung, Vu Hong Ky, Do Khanh Tung, Vu Dinh Lam, Do Hung Manh, Nguyen Huy Dan, Trinh Xuan Anh and Ngo Thi Hong Le
Inorganics 2024, 12(3), 80; https://doi.org/10.3390/inorganics12030080 - 6 Mar 2024
Cited by 1 | Viewed by 2041
Abstract
We have designed an excellent visible-light-driven and high-performance photocatalyst with a Ag-Cu2O-ZnO nanowire heterostructure in our work by combining the hydrothermal approach with plasma–liquid technology. The structural and morphological characteristics and optical properties of the samples were evaluated using X-ray diffraction, [...] Read more.
We have designed an excellent visible-light-driven and high-performance photocatalyst with a Ag-Cu2O-ZnO nanowire heterostructure in our work by combining the hydrothermal approach with plasma–liquid technology. The structural and morphological characteristics and optical properties of the samples were evaluated using X-ray diffraction, field-emission scanning electron microscopy, and spectrophotometry, respectively. The results show that the Ag nanoparticles are mainly positioned on the Cu2O nanoclusters compared with the ZnO nanowire surface, forming broccoli-like Ag-Cu2O nanoclusters during the Ar gas plasma treatment process in an aqueous solution. The diameter of the Ag/Cu2O nanoclusters ranges from 150 to 180 nm. The Ag-Cu2O-ZnO nanowires exhibited improved photocatalytic performance, decomposing approximately 98% methyl orange dye in 30 min. This is a consequence of the synergistic interactions between the p-n heterojunction formed at the Cu2O-ZnO interfaces and the localized surface plasmon resonance (LSPR) effect of the Ag nanoparticles, which broaden the visible light absorption range and effectively separate the photogenerated charge carriers. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
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Review

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34 pages, 9760 KiB  
Review
A Comprehensive Review of Recent Advances in Perovskite Materials: Electrical, Dielectric, and Magnetic Properties
by Faouzia Tayari, Silvia Soreto Teixeira, Manuel Pedro F. Graca and Kais Iben Nassar
Inorganics 2025, 13(3), 67; https://doi.org/10.3390/inorganics13030067 - 24 Feb 2025
Cited by 1 | Viewed by 2032
Abstract
Perovskite materials have emerged as one of the most promising classes of compounds in recent years due to their unique combination of electrical, dielectric, and magnetic properties, which make them ideal candidates for a wide range of advanced technological applications. This comprehensive review [...] Read more.
Perovskite materials have emerged as one of the most promising classes of compounds in recent years due to their unique combination of electrical, dielectric, and magnetic properties, which make them ideal candidates for a wide range of advanced technological applications. This comprehensive review explores the latest developments in the electrical, dielectric, and magnetic behavior of perovskites, providing an in-depth analysis of the underlying mechanisms and their potential for improving device performance. The review covers the fundamental aspects of charge transport, polarization, and magnetic interactions in perovskite structures including the impact of crystal symmetry, ion migration, and external stimuli on their properties. Moreover, it highlights the various strategies used to tailor these properties through compositional engineering, doping, and structural modifications, resulting in enhanced efficiency, stability, and multifunctionality in applications such as photovoltaics, capacitors, dielectric resonators, and spintronic devices. Additionally, the paper addresses the challenges associated with the practical implementation of perovskite materials including stability issues under harsh environmental conditions and scalability for industrial applications. The review concludes with an outlook on future directions, emphasizing the need for further research to overcome these challenges and unlock the full potential of perovskite materials in next-generation electronics, energy storage, and magnetic devices. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
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24 pages, 8526 KiB  
Review
Research Progress of Halide Perovskite Nanocrystals in Biomedical Applications: A Review
by Guiyun Wang, Yanxia Qi, Zhiyan Zhou, Zhuang Liu and Ruowei Wang
Inorganics 2025, 13(2), 55; https://doi.org/10.3390/inorganics13020055 - 13 Feb 2025
Viewed by 857
Abstract
Halide perovskite nanocrystals have rapidly emerged as a prominent research topic in materials science over the past decade owing to their exceptional optoelectronic properties and tunability. Their distinctive characteristics, including high light absorption coefficients, high quantum yields, narrow-band emissions, low defect densities, and [...] Read more.
Halide perovskite nanocrystals have rapidly emerged as a prominent research topic in materials science over the past decade owing to their exceptional optoelectronic properties and tunability. Their distinctive characteristics, including high light absorption coefficients, high quantum yields, narrow-band emissions, low defect densities, and adjustable chemical compositions and sizes, position them as highly promising candidates for applications in optoelectronic devices, energy conversion units, and other related systems. However, due to the toxicity and instability of halide perovskite nanocrystals, their widespread application in the biomedical field has been limited in the past. In recent years, numerous innovative coating strategies have been reported to effectively enhance the stability of halide perovskite nanocrystals while confining their toxic metal ions within the coating layers, thereby significantly improving their biocompatibility. This review provides a comprehensive summary of the recent progress of halide perovskite nanocrystals in the field of biomedicine. It covers coating strategies to enhance stability and biocompatibility, as well as the applications of coated halide perovskite nanocrystals in biomedicine, with a particular focus on their unique advantages in bioimaging and chemical sensing. Finally, we address unresolved issues and challenges, such as the metabolic pathways and final products of halide perovskite nanocrystals in vivo. We hope to inspire researchers in the field and provide direction for future studies. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
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27 pages, 16904 KiB  
Review
Bridgman Method for Growing Metal Halide Single Crystals: A Review
by Hui Zhu, Suqin Wang, Ming Sheng, Bo Shao, Yu He, Zhuang Liu and Guangtao Zhou
Inorganics 2025, 13(2), 53; https://doi.org/10.3390/inorganics13020053 - 11 Feb 2025
Viewed by 1401
Abstract
The Bridgman method for single-crystal growth enables the formation of crystals at the lower end of the molten material by cooling it under a precisely controlled temperature gradient. This makes it particularly suitable for producing high-quality single-crystal materials. Over the years, the Bridgman [...] Read more.
The Bridgman method for single-crystal growth enables the formation of crystals at the lower end of the molten material by cooling it under a precisely controlled temperature gradient. This makes it particularly suitable for producing high-quality single-crystal materials. Over the years, the Bridgman technique has become widely adopted for growing single crystals of semiconductors, oxides, sulfides, fluorides, as well as various optoelectronic, magnetic, and piezoelectric materials. Recently, there has been growing interest in metal halide materials, with the growth of high-quality metal halide single crystals emerging as a major focus for both the scientific community and industry. However, traditional solution-based single-crystal growth methods have several limitations, such as slow growth rates, inconsistent crystal quality, challenges in solvent selection, and difficulties in controlling saturation levels. These issues present significant obstacles, particularly when large, defect-free, high-quality single crystals are needed for certain high-performance materials. As a result, the Bridgman method has emerged as an effective solution to overcome these challenges. This review provides an overview of various categories of metal halide single-crystal systems grown using the Bridgman method in recent years. The systems are classified based on their dimensionality into three-dimensional, two-dimensional, and zero-dimensional metal halide structures. Furthermore, we highlight novel metal halide single crystals developed through the Bridgman technique. Additionally, we offer a brief introduction to the structures, properties, and applications of these single crystals, underscoring the crucial role of the Bridgman method in advancing research in this field. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
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27 pages, 5416 KiB  
Review
Recent Advances in Aluminum Nitride (AlN) Growth by Magnetron Sputtering Techniques and Its Applications
by Nabeel Ahmad Khan Jadoon, Vaigunthan Puvanenthiram, Mayada Ahmed Hassan Mosa, Ashutosh Sharma and Kaiying Wang
Inorganics 2024, 12(10), 264; https://doi.org/10.3390/inorganics12100264 - 7 Oct 2024
Cited by 5 | Viewed by 7234
Abstract
This review explores the processes involved in enhancing AlN film quality through various magnetron sputtering techniques, crucial for optimizing performance and expanding their application scope. It presents recent advancements in growing AlN thin films via magnetron sputtering, elucidating the mechanisms of AlN growth [...] Read more.
This review explores the processes involved in enhancing AlN film quality through various magnetron sputtering techniques, crucial for optimizing performance and expanding their application scope. It presents recent advancements in growing AlN thin films via magnetron sputtering, elucidating the mechanisms of AlN growth and navigating the complexities of thin-film fabrication. Emphasis is placed on different sputtering methods such as DC, RF, pulsed DC, and high-power impulse DC, highlighting how tailored sputtering conditions enhance film characteristics in each method. Additionally, the review discusses recent research findings showcasing the dynamic potential of these techniques. The practical applications of AlN thin films, including wave resonators, energy harvesting devices, and thermal management solutions, are outlined, demonstrating their relevance in addressing real-world engineering challenges. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
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16 pages, 1471 KiB  
Review
Synthesis and Study of Correlated Phase Transitions of CrN Nanoparticles
by Khan Alam
Inorganics 2024, 12(9), 247; https://doi.org/10.3390/inorganics12090247 - 11 Sep 2024
Viewed by 1207
Abstract
Chromium nitride is an important transition metal nitride for studying fundamental properties and for advanced technological applications. It is considered a model system for exploring structural, electronic, and magnetic transitions. These transitions occur at 275 ± 10 K and appear to be coupled; [...] Read more.
Chromium nitride is an important transition metal nitride for studying fundamental properties and for advanced technological applications. It is considered a model system for exploring structural, electronic, and magnetic transitions. These transitions occur at 275 ± 10 K and appear to be coupled; however, many discrepant studies on these transitions can be found in the published literature. The underlying reasons for these controversies are suspected to be the CrN nanoparticles preparation methods, strains, impurities, stoichiometry, nanoparticle size, characterization methods, and ambient conditions for characterizing them. This article is focused on the review of the nanoparticle synthesis methods and the use of these nanoparticles for studying structural, electronic, and magnetic transitions. The focus is mainly on the experimental methods, while theoretical simulations are briefly reviewed at the end of the article. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials, 2nd Edition)
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