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Electronics
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Semiconductor and Package for Next Generation
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Semiconductor and Package for Next Generation

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: closed (30 September 2022) | Viewed by 3420

Special Issue Editors

Prof. Dr. Inn-Yeal Oh

E-Mail Website
Guest Editor
Division of Smart Automotive Engineering, Sunmoon University, Asan Chungnam 31460, Korea
Interests: automotive semiconductor and package for next generation; V2X communication; sensors (radar, ultrasound)
Prof. Dr. In-Hyouk Song

E-Mail Website
Guest Editor
The Department of Engineering Technology, Texas State University, 601 University Dr., San Marcos, TX 78666, USA
Interests: semiconductor packaging; MEMS packaging; microsensors and actuators

Special Issue Information

Dear colleagues,

Semiconductor processes use nanometer technology to increase circuit integration and process at high speed, with the development of 5G/6G aimed at gigabits per second. In addition, process and design technologies are being developed to secure high power levels, and reliability improvement is essential in the automobile semiconductor field. This should be researched and developed not only with semiconductors but also with packages.

This Special Issue deals with the process and design technology of semiconductors and packages that improve the speed, density, power, and reliability of various applications. I hope there will be many publications by the authors of theoretical and application-oriented papers that present new ideas and technologies to solve various unresolved problems and challenges relating to semiconductors and packages.

Prof. Dr. Inn-Yeal Oh
Prof. Dr. In-Hyouk Song
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductor and package fabrication technologies
  • high-speed semiconductor and packages
  • mixed IP semiconductor and packages
  • antenna-in-package
  • lidar, radar, ultrasound sensor semiconductor and package including MEMS
  • communication semiconductor and package
  • power level(amp) semiconductor and package

Published Papers (2 papers)

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Research

13 pages, 4372 KiB  
Article
A Dual Polarization 3-D Beamforming AiP
by Inn-Yeal Oh
Electronics 2022, 11(19), 3132; https://doi.org/10.3390/electronics11193132 - 29 Sep 2022
Cited by 1 | Viewed by 1245
Abstract
This paper describes the implementation of an antenna-in-package (AiP) with a dual polarization function, supporting a three-dimensional (3D) beamforming operation. In order to implement 3D beamforming, a Yagi-type end-fire antenna supporting each of the x and y directions and a patch-type broadsided antenna [...] Read more.
This paper describes the implementation of an antenna-in-package (AiP) with a dual polarization function, supporting a three-dimensional (3D) beamforming operation. In order to implement 3D beamforming, a Yagi-type end-fire antenna supporting each of the x and y directions and a patch-type broadsided antenna supporting the z-direction were implemented. The broadside antennas have dual polarization functions so that they can be received in any direction. Each antenna was implemented in four array structures to support beamforming operations. The broadside antenna was designed in a 2 × 2 array structure, with a patch-type antenna and two linear dual polarization functions. The single antenna operated with a gain of 6 dBi, an E-plane beam width of ±45 degrees, and an H-plane beam width of ±50 degrees and had an antenna gain of 9~11 dBi as well as a vertical/horizontal forming operation with a radiation angle of ±22 degrees The end-fire antenna unit was designed in a 1 × 4 array structure with a Yagi-type antenna. The single antenna had a gain of 4 dBi, with an antenna gain of 8 dBi in the array structure, and it was improved to 11 dBi by adding a parasitic array director. The final end-fire antenna unit had a radiation angle of ±11 degrees and a beamforming coverage of ±45 degrees The vertical and horizontal design results were secured for reception in any direction, and all the array antennas had a return loss of 10 dB or less in the entire frequency band, from 57 to 66 GHz. Full article
(This article belongs to the Special Issue Semiconductor and Package for Next Generation)
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7 pages, 615 KiB  
Article
Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier
by Yuchen Li, Sen Huang, Xinhua Wang, Qimeng Jiang and Xinyu Liu
Electronics 2022, 11(9), 1331; https://doi.org/10.3390/electronics11091331 - 22 Apr 2022
Cited by 1 | Viewed by 1283
Abstract
The temperature-dependent ON-state breakdown BVON loci of AlGaN/GaN high-electron-mobility transistors (HEMTs) with an AlGaN back barrier were investigated using the gate current extraction technique. The impact ionization of acceptor-like traps was revealed to be responsible for the ON-state breakdown in [...] Read more.
The temperature-dependent ON-state breakdown BVON loci of AlGaN/GaN high-electron-mobility transistors (HEMTs) with an AlGaN back barrier were investigated using the gate current extraction technique. The impact ionization of acceptor-like traps was revealed to be responsible for the ON-state breakdown in HEMTs as a 2D electron gas (2DEG) channel is marginally turned on. The characteristic electric field Ei of impact ionization was extracted, exhibiting a U-shaped temperature dependence from 40 to −30 ∘C, with minimum Ei occurring at −10 ∘C. The impurity scattering effect of acceptor-like traps in AlGaN/GaN heterostructures is suggested to be responsible for the negative temperature dependence of BVON and Ei below −10 ∘C. Full article
(This article belongs to the Special Issue Semiconductor and Package for Next Generation)
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