Recent Advances in GaN Power Devices

Dear Colleagues,

Gallium nitride (GaN) power devices have seen significant advancements in recent years, revolutionizing the field of power electronics. These devices possess superior properties compared to their traditional silicon-based counterparts, including higher breakdown voltage, faster switching speeds, and lower on-resistance. GaN power devices, including High-Electron-Mobility Transistors (HEMTs) and Schottky diodes, have been developed and commercialized for various applications, ranging from consumer electronics to renewable energy systems.

Recent research has focused on improving the performance and reliability of GaN power devices. Advancements in epitaxial growth techniques, such as Metal–Organic Chemical Vapor Deposition (MOCVD), have enabled the fabrication of high-quality GaN layers with reduced defect densities. Additionally, novel device structures, like p-GaN gates and field plates, have been introduced to mitigate current collapse and enhance breakdown voltage. Packaging technologies, such as flip-chip bonding and low-inductance interconnects, have also been developed to optimize the thermal and electrical performance of GaN power devices.

Furthermore, efforts have been made to address reliability concerns, such as dynamic on-resistance and gate degradation, through process optimization and device design. As a result of these advancements, GaN power devices are poised to enable the production of more efficient, compact, and reliable power conversion systems in various industries.

Topics of interest for this publication include, but are not limited to, the following:

• Advanced characterizations for GaN power devices;
• GaN power IC technology;
• Power electronic applications based on GaN power devices;
• GaN device reliability;
• The simulation and modelling of GaN power devices;
• The design of high-performance power converters with SiC and GaN devices.

Dr. Dehao Qin
Guest Editor

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