New Insights in Semiconductors: Materials, Devices, and Applications

Dear Colleagues,

In the last two decades, nitride materials and electronic devices have reached an outstanding stage of development, and they now represent the second largest semiconductor market behind silicon. In particular, red, green, and blue light-emitting diodes (LEDs) are now widely used in various applications (e.g., domestic lighting, backlit smartphones, liquid crystal display screens (LED screens) etc.). To further increase the application potential of nitride LEDs, the use of other regions of the electromagnetic spectrum is highly desirable, and current research activity is particularly focused on two topics: (1) green and red LEDs as compact light sources in the visible wavelength range and (2) UVB and UVC LEDs as compact light sources in the ultra-violet (UV) wavelength range. In both cases, the improvement of LED efficiency is based on developing innovative routes from material growth to the device fabrication process. Indeed, LEDs with high internal quantum, external quantum, and wall plug efficiencies require epitaxial layers with low defect densities (dislocations, point defects, unintentional impurities, etc.), a highly radiative active region, doped layers with high carrier concentrations and low resistivities for efficient carrier injection and low power consumption, and high extraction efficiency. Optimizing these factors via epitaxial techniques involves the structural design; optical, electrical and electronic engineering in terms of strain management (implying alloying control and defect control); quantum confinement (implying localization effect and wavelength emission); polarization discontinuity (implying radiative efficiency and doping efficiency); device design (implying injection, extraction, and wall plug efficiency); etc., of semiconductor materials. Combining these approaches, which disruptive technologies have pushed forward, will lead to the emergence of high-efficiency green–red and ultra-violet LEDs and enable the development of new applications and key technologies.

We are also interested in receiving manuscripts about HEMT, power devices, transistors, electronic sensors etc., using p-GaN, AlGaN, BN, SiC, diamond, and Ga₂O₃.

Dr. M. Ajmal Khan
Guest Editor

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