State-of-the-Art Nanoscale Electronic and Photonic Devices

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Optoelectronics".

Deadline for manuscript submissions: closed (31 July 2022) | Viewed by 8643

Special Issue Editors


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Guest Editor
1. School of Mathematical and Physical Sciences, University of Technology Sydney, 15 Broadway, Ultimo, NSW 2007, Australia
2. ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, 15 Broadway, Ultimo, NSW 2007, Australia
Interests: 2D materials; nonlinear optics; nanofabrication; single photon emitters; functional photonic devices

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Guest Editor
DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
Interests: optoelectronics; nanophotonics; 2D photonics; meta-optics

Special Issue Information

Dear Colleagues,

Nanoscale electronic and photonic devices are very important for integrated devices and practical applications, including energy generation and harvesting, optical communications, high-resolution imaging, nonlinear optical processes, etc. Nanoscale electronic and photonic devices have achieved great advancement due to advanced fabrication tools and novel two-dimensional materials. Combined with the promising physical and chemical properties of novel two-dimensional materials, nanoscale electronic and photonic devices have demonstrated some advantages and excellent performance in electronic and photonic applications. This Special Issue focuses on the analysis, design, novel materials, and implementation of state-of-the-art nanoscale electronic and photonic devices and their potential applications. The topics of interest include, but are not limited to: 

  • Two-dimensional materials;
  • Nonlinear optics and photonics;
  • Photonic devices;
  • Flexible electronics;
  • Photovoltaics;
  • Electronic devices, including photodetectors, field-effect transistors, etc.

Dr. Tieshan Yang
Dr. Sanshui Xiao
Guest Editors

Manuscript Submission Information

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Keywords

  • two-dimensional materials
  • nonlinear optics and photonics
  • photonic devices
  • flexible electronics
  • photovoltaics
  • electronic devices, including photodetectors, field-effect transistors, etc

Published Papers (1 paper)

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Research

17 pages, 9403 KiB  
Article
Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure
by Nour El I. Boukortt, Trupti Ranjan Lenka, Salvatore Patanè and Giovanni Crupi
Electronics 2022, 11(1), 91; https://doi.org/10.3390/electronics11010091 - 28 Dec 2021
Cited by 18 | Viewed by 8005
Abstract
The FinFET architecture has attracted growing attention over the last two decades since its invention, owing to the good control of the gate electrode over the conductive channel leading to a high immunity from short-channel effects (SCEs). In order to contribute to the [...] Read more.
The FinFET architecture has attracted growing attention over the last two decades since its invention, owing to the good control of the gate electrode over the conductive channel leading to a high immunity from short-channel effects (SCEs). In order to contribute to the advancement of this rapidly expanding technology, a 3D 14-nm SOI n-FinFET is performed and calibrated to the experimental data from IBM by using Silvaco TCAD tools. The calibrated TCAD model is then investigated to analyze the impact of changing the fin width, fin height, gate dielectric material, and gate length on the DC and RF parameters. The achieved results allow gaining a better understanding and a deeper insight into the effects of varying the physical dimensions and materials on the device performance, thereby enabling the fabrication of a device tailored to the given constraints and requirements. After analyzing the optimal values from different changes, a new device configuration is proposed, which shows a good improvement in electrical characteristics. Full article
(This article belongs to the Special Issue State-of-the-Art Nanoscale Electronic and Photonic Devices)
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