Special Issue "Millimeter-Wave Integrated Circuits and Systems for 5G Applications"

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Circuit and Signal Processing".

Deadline for manuscript submissions: 31 October 2020.

Special Issue Editor

Prof. Dr. Kiat Seng Yeo
Website1 Website2
Guest Editor
Engineering Product Development (EPD), Singapore University of Technology and Design, Singapore 487372, Singapore
Interests: circuits and systems; low-power integrated circuit design; visible light communications; CMOS technology; RF/mm-wave integrated circuit design; VLSI/ULSI design; memory

Special Issue Information

Dear Colleagues,

Due to the explosive growth of mobile devices and 5G connectivity, wireless transmission at a greater than one gigabit-per-second (Gbps) data rate is becoming essential. As a result, the network infrastructure will be endowed with an unprecedented degree of intelligence, integrating with the environment and offering fast, secure, and reliable communications. Objects like lamp posts, road signs, buildings, vehicles, drones, robots, trains, and watercrafts will be equipped with intelligent devices able to detect electromagnetic signals, perform computations, and store data.

It is extremely challenging to achieve Gbps data rate applications below a 6 GHz band due to spectrum scarcity. Therefore, the millimeter-wave (MMW) band has drawn increasing interest over recent years for enabling ultrahigh-speed wireless transmission. Combining cutting-edge network technology and MMW integrated circuit design, 5G technology offers connections that are multitudes faster than current connections with low latency (1 ms or less) and high speed (>1 Gbps) for massive Internet of Things (IoT), tactile internet, drones, and robotics. It will transform the way we live, play, work, and travel while delivering more performance, efficiency, and comfort. New products, systems, services, business models, and entire industries will be born as 5G technology provides a huge leap forward in speed, capacity, and connectivity. 

The main aim of this Special Issue is to disseminate latest findings, new research developments, and future trends and innovations in MMW integrated circuits and systems for 5G applications. Both theoretical and experimental studies for MMW IC design, architectures, technologies, devices, circuits, and systems are encouraged. Furthermore, high-quality review and survey papers are welcomed.

The papers considered for possible publication may focus on but not necessarily be limited to the following areas:

  • MMW circuits, such as low noise amplifiers, mixers, voltage-controlled oscillators, power amplifiers, variable gain amplifiers, etc.;
  • MMW architectures, systems and subsystems, such as receivers, transmitters, transceivers, phase-locked loops, frequency synthesizers, multistandard transceivers, digital radio, etc.;
  • MMW passive structures such as transformers, hybrid couplers, filters, baluns, switches, antennae, etc.;
  • MMW digital baseband; MMW data converters; wireless communication systems; wideband integrated circuits and systems; low-power and energy-efficient MMW digital systems;
  • Advanced MMW IC; emerging MMW nanoscale CMOS IC; MMW 3D integrations; MMW SiP and SOC.

Prof. Dr. Yeo Kiat Seng
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1500 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Millimeter-wave circuits and systems
  • Transceivers
  • Low-power, energy-efficient MMW IC design
  • Wireless communication systems
  • Millimeter-wave digital baseband
  • Advanced MMW IC technologies, SiP and SOC

Published Papers (3 papers)

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Research

Open AccessArticle
Ka-Band Marchand Balun with Edge- and Broadside-Coupled Hybrid Configuration
Electronics 2020, 9(7), 1116; https://doi.org/10.3390/electronics9071116 - 09 Jul 2020
Abstract
This article presents a novel Ka-band Marchand balun implemented in 0.13-μm SiGe bipolar complementary metal–oxide–semiconductor (BiCMOS) process. By combining both edge- and broadside-coupled structures, the new hybrid balun is able to increase the coupling and minimize the balun insertion loss. As compared with [...] Read more.
This article presents a novel Ka-band Marchand balun implemented in 0.13-μm SiGe bipolar complementary metal–oxide–semiconductor (BiCMOS) process. By combining both edge- and broadside-coupled structures, the new hybrid balun is able to increase the coupling and minimize the balun insertion loss. As compared with conventional edge-coupled or broadside-coupled structures, the proposed balun achieves the lowest insertion loss of 1.02 dB across a wide 1-dB bandwidth from 29.0 GHz to 46.0 GHz, with a core size of 270 μm × 280 μm. Full article
(This article belongs to the Special Issue Millimeter-Wave Integrated Circuits and Systems for 5G Applications)
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Open AccessArticle
Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 µm SiGe BiCMOS
Electronics 2020, 9(7), 1058; https://doi.org/10.3390/electronics9071058 - 27 Jun 2020
Abstract
This paper presents two new inductorless differential variable-gain transimpedance amplifiers (DVGTIA) with voltage bias controlled variable gain designed in TowerJazz’s 0.18 µm SiGe BiCMOS technology (using CMOS transistors only). Both consist of a modified differential cross-coupled regulated cascode preamplifier stage and a cascaded [...] Read more.
This paper presents two new inductorless differential variable-gain transimpedance amplifiers (DVGTIA) with voltage bias controlled variable gain designed in TowerJazz’s 0.18 µm SiGe BiCMOS technology (using CMOS transistors only). Both consist of a modified differential cross-coupled regulated cascode preamplifier stage and a cascaded amplifier stage with bias-controlled gain-variation and third-order interleaving feedback. The designs have wide measured transimpedance gain ranges of 24.5–60.6 dBΩ and 27.8–62.8 dBΩ with bandwidth above 6.42 GHz and 5.22 GHz for DVGTIA designs 1 and 2 respectively. The core power consumptions are 30.7 mW and 27.5 mW from a 1.8 V supply and the input referred noise currents are 10.3 pA/√Hz and 21.7 pA/√Hz. The DVGTIA designs 1 and 2 have a dynamic range of 40.4 µA to 3 mA and 76.8 µA to 2.7 mA making both suitable for real photodetectors with an on-chip photodetector capacitive load of 250 fF. Both designs are compact with a core area of 100 µm × 85 µm. Full article
(This article belongs to the Special Issue Millimeter-Wave Integrated Circuits and Systems for 5G Applications)
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Open AccessArticle
A Compact Broadband Monolithic Sub-Harmonic Mixer Using Multi-Line Coupler
Electronics 2020, 9(4), 694; https://doi.org/10.3390/electronics9040694 - 24 Apr 2020
Abstract
A compact broadband monolithic sub-harmonic mixer is presented in a 70 nm GaAs Technology for millimeter wave wireless communication application. The proposed mixer adopts a novel multi-line coupler structure; where the two-sided coupling energy of radio frequency (RF) and local oscillation (LO) signals [...] Read more.
A compact broadband monolithic sub-harmonic mixer is presented in a 70 nm GaAs Technology for millimeter wave wireless communication application. The proposed mixer adopts a novel multi-line coupler structure; where the two-sided coupling energy of radio frequency (RF) and local oscillation (LO) signals are both collected and efficiently feed to anti-parallel diode pair (APDP) topology; resulting in broadband performance and compact chip size. As a comparison in the same circuit configuration; the five-line coupler can expand the bandwidth of the existing three-line coupler by 85% and reduce the area by 39.5% when the central frequency is 127 GHz. The measured conversion gain is −16.2 dB to −19.7 dB in a wide operation frequency band of 110–170 GHz. The whole chip size is 0.47 × 0.66 mm2 including test pads. The proposed mixer exhibits good figure-of-merits for D-band down-converter applications Full article
(This article belongs to the Special Issue Millimeter-Wave Integrated Circuits and Systems for 5G Applications)
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