Computing-in-Memory Devices and Systems

Dear Colleagues,

Computation-in-memory refers to computing systems where the memory is placed as close as possible to the processing systems. The reduced amount of data transfer significantly improves the application performance, reducing the overhead involved in accessing the main memory.

The term “in-memory” refers to the capability of executing simple logic operations within the memory. An architecture based on computing-in-memory has several benefits, mainly related to the possibility of executing some operations locally without wasting energy and time for transferring data from the memory to the computational units.

To implement computing-in-memory systems, emerging non-volatile memory technologies are preferred to significantly reduce standby leakage power. Resistive random-access memory (RRAM), phase-change memory (PCM), ferroelectric FETs, and spin-based memories are just some examples.

The purpose of the proposed Special Issue on Computing-in-Memory Devices and Systems is to provide a comprehensive view of recent advances in devices that combine memory and computing capabilities, system architectures, and algorithms based on new advances in computer architecture and applications. Topics of interest for this Special Issue include, but are not limited to:

• Non-volatile memory solutions with computing capabilities;
• Novel circuit design solutions for computing-in-memory;
• Computing-in-memory applications and architectures;
• EDA tools for the design and benchmarking of computing-in-memory architectures;
• Novel electronic devices that show computing-in-memory capabilities;
• Device modeling.

Dr. Mariagrazia Graziano
Dr. Fabrizio Riente
Dr. Giovanna Turvani
Guest Editor

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