AI-Driven Innovations in Power Electronics and Smart Grids: Enhancing Efficiency, Reliability and Sustainability

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Power Electronics".

Deadline for manuscript submissions: 15 November 2025 | Viewed by 1152

Special Issue Editor


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Faculty of Science and Engineering, School of Electrical Engineering, Computing and Mathematical Sciences (EECMS), Curtin University, Bentley, WA 6102, Australia
Interests: data science; cyber security; graph data analytics and modeling; social network analysis; artificial intelligence; machine learning
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Special Issue Information

Dear Colleagues,

The rapid advancements in artificial intelligence (AI) have significantly impacted various technological fields, including power electronics and smart grid systems. As energy demands continue to rise, there is an increasing need for intelligent solutions that optimize power generation, distribution, and consumption. AI-driven technologies offer the potential to revolutionize smart grids by enabling more efficient, reliable, and sustainable energy management. By integrating AI with power electronics, we can enhance real-time decision-making, improve fault detection, and optimize the integration of renewable energy sources, paving the way for the next generation of smart energy systems. This Special Issue seeks to explore these cutting-edge developments, bringing together research that bridges AI innovations with practical applications in the energy sector.

Releted Topics:

  • AI-driven optimization in power electronics and smart grids.
  • Machine learning for predictive maintenance in smart grids.
  • Neural networks in fault detection and diagnosis.
  • AI-enhanced power quality monitoring.
  • AI for intrusion detection and prevention in smart grid infrastructure.

Dr. Nur Haldar
Guest Editor

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Keywords

  • AI-driven optimization
  • machine learning
  • fault detection
  • energy management systems
  • power quality monitoring
  • cybersecurity in smart grids

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Published Papers (1 paper)

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Research

14 pages, 7523 KiB  
Article
Integrated Junction Barrier Schottky Diode and MOS-Channel Diode in SiC Planar MOSFETs for Optimization of Reverse Performances
by Xinyu Li, Feng He, Xiping Niu, Ling Sang, Yawei He, Kaixuan Xu, Yan Tian, Xintian Zhou, Yunpeng Jia and Rui Jin
Electronics 2024, 13(23), 4770; https://doi.org/10.3390/electronics13234770 - 2 Dec 2024
Viewed by 848
Abstract
A novel planar silicon carbide (SiC) MOSFET integrated with both MOS-channel diode (MCD) and junction barrier Schottky diode (JBS) on the same chip (MCD-JBSFET) is proposed and investigated through Technology Computer-Aided Design (TCAD) simulations in this paper. The proposed device features the lowest [...] Read more.
A novel planar silicon carbide (SiC) MOSFET integrated with both MOS-channel diode (MCD) and junction barrier Schottky diode (JBS) on the same chip (MCD-JBSFET) is proposed and investigated through Technology Computer-Aided Design (TCAD) simulations in this paper. The proposed device features the lowest turn-on voltage and the best current conduction capability under the reverse-biased conditions, allowing it to achieve the same reverse conduction capability with fewer MCDs compared to conventional MOSFET with MCD structures (MCDFET). This reduction in the number of MCDs enables more channels to operate under forward-biased conditions, thereby improving power density. Compared to a conventional MOSFET integrated with JBS structure (JBSFET), the reverse current in the MCD-JBSFET flows through both the MCD and JBS, which suppresses the peak lattice temperature at Schottky contact and enhances the high-temperature robustness, especially under surge current conditions. In addition, the split-gate structure in the proposed structure optimizes the reverse capacitance and the figure of merit Ron,sp × Qg by factors of 0.65 and 2.15, respectively. Finally, the switching losses are reduced by 40.2%, indicating the suitability of MCD-JBSFET for high-frequency and high-current applications. Full article
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