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Microelectronics, Volume 2, Issue 3

2026 September - 4 articles

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Articles (4)

  • Article
  • Open Access
411 Views
24 Pages

Packaging Design and Characterization of a 16-Channel Silicon Photonic Transmitter Module for a 1.6 Tb/s-Class Optical Engine

  • Fu-Hsiang Hsu,
  • Wei-Chih Cheng,
  • Chien-Wei Huang,
  • Hong-Wei Huang,
  • Chia-Chin Chiang and
  • Chun-Nien Liu

The increasing bandwidth demand of artificial-intelligence computing and data-center interconnects has driven silicon photonic optical engines toward higher capacity, compact packaging, and improved scalability. This work presents the packaging desig...

  • Article
  • Open Access
402 Views
12 Pages

Study of Transmission Performance of Optical Through Silicon via: From a Fabrication Imperfection Perspective

  • Boyang Hu,
  • Siwei Xie,
  • Fangcheng Cao,
  • Xingyan Zhao,
  • Yang Qiu,
  • Shaonan Zheng,
  • Yuan Dong,
  • Qize Zhong and
  • Ting Hu

Optical through silicon vias (OTSVs) have been regarded as a promising alternative to conventional (electrical) through silicon vias (TSVs) for the next-generation electro-optic heterogeneous integration. This study systematically examines the influe...

  • Feature Paper
  • Article
  • Open Access
463 Views
11 Pages

EMI-Induced Eye Diagram Degradation in CMOS Inverter: Experimental Analysis and Predictive Modeling

  • Mohammad Abedi,
  • Zahra Abedi,
  • Sameer Hemmady,
  • Edl Schamiloglu and
  • Payman Zarkesh-Ha

Electromagnetic interference (EMI) has become a serious challenge for signal integrity (SI) in modern high-speed digital systems. With the technology scaling down into nanometric CMOS technologies and lowering supply voltage, EMI induced signal integ...

  • Article
  • Open Access
808 Views
17 Pages

Mitigation of the Row-Hammer Effect in Sub-20 nm Dynamic Random-Access Memory (DRAM) Using Low-k Dielectrics

  • Jeongbeen Park,
  • Dongseok Oh,
  • Jae Yeon Park,
  • Dongjun Jang and
  • Sangwan Kim

As dynamic random-access memory (DRAM) continues to scale down and achieve higher integration density, the cell layout has transitioned to 6F2, resulting in narrower spacing between adjacent word lines (WLs). Consequently, cell-to-cell disturbance ha...

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Microelectronics - ISSN 3042-5344