We demonstrate the fabrication of air gaps in a PECVD SiN interlayer through lateral recess by employing two consecutive plasma etch steps on an AlN/SiN/Al2O3 stack. This approach enables the preservation of sub-100 nm openings in Al2O3, offering a p...
4H-SiC has been studied and applied in power semiconductor devices due to its wider band gap and higher thermal conductivity than those of Si and hence has great potential for power devices operating at high powers and high temperatures. The introduc...
Synthesizable field-programmable gate arrays (FPGAs) have recently gained significant traction due to their low development costs and their ability to adapt to new process technologies. The successful adoption of synthesizable FPGAs requires robust m...
Quantum biosensors offer a promising route to overcome the sensitivity and specificity limitations of conventional biosensing technologies. Their ability to detect biochemical signals at extremely low concentrations makes them strong candidates for n...
This paper presents a new compact and efficient first-order all-pass filter in voltage mode based on a second-generation voltage conveyor, along with two resistors, and a capacitor. This circuit delivers an all-pass response from the low-impedance no...
The influence of back-gate (BG) bias on the breakdown voltage (BV) of lateral SOI power devices is investigated using TCAD simulations. A reference SOI-LDMOS structure with BVREF = 73.7 V, optimized based on RESURF and charge-sharing principles, is s...
Automatic techniques for analog integrated circuit layout design have been proposed in the literature for over four decades. However, as analog design moves into deep nanometer integration nodes, the increasing number of design rules, the influence o...
The field of microelectronics is at the heart of modern technological progress, driving innovations that span computing, communications, healthcare, and energy [...]
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