- Article
Kinetics of Thickness Growth of Silicon Films During Pulsed Magnetron Sputtering Using the Caroline D12C System
- Kanat Tolubayev,
- Bakhyt Zhautikov,
- Nikolay Zobnin,
- Guldana Dairbekova and
- Saule Kabiyeva
In this study, the effects of specific power (1–100 W/cm2), operating pressure (0.5–3.0 Pa), and voltage frequency (20–500 kHz) on film growth kinetics, morphology, and silicon entrainment were investigated to optimize magnetron spu...

