- Article
Study of Single-Event Effects Influenced by Displacement Damage Effects under Proton Irradiation in Static Random-Access Memory
- Yan Liu,
- Rongxing Cao,
- Jiayu Tian,
- Yulong Cai,
- Bo Mei,
- Lin Zhao,
- Shuai Cui,
- He Lv,
- Xianghua Zeng and
- Yuxiong Xue
Static random-access memory (SRAM), a pivotal component in integrated circuits, finds extensive applications and remains a focal point in the global research on single-event effects (SEEs). Prolonged exposure to irradiation, particularly the displace...

