Modulation Performance Enhancement of Directly Modulated Injection-Locked Semiconductor Lasers Using an Equivalent Electrical Circuit
Abstract
1. Introduction
2. Equivalent Circuit Model of OIL Lasers

3. Simulation Results
4. Modulation Performance Improvement
5. Conclusions
Author Contributions
Funding
Conflicts of Interest
Appendix A
References
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| Symbol | Quantity | Value | Unit |
|---|---|---|---|
| λ0 | Wavelength | 1550 | nm |
| g | Net stimulated gain | 4.7 × 104 | 1/s |
| Ntr | Transparency carrier number | 9.36 × 106 | - |
| Jth | Threshold current | 2 × 1016 | 1/s |
| Jbias | Bias current | 5 × Jth | 1/s |
| γP | Photon decay rate | 5 × 1011 | 1/s |
| γN | Carrier decay rate | 109 | 1/s |
| α | Linewidth enhancement factor | 5 | - |
| κ | Coupling ratio | 225 | 1/s |
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Bae, H.-J.; Cho, J.-H.; Sung, H.-K. Modulation Performance Enhancement of Directly Modulated Injection-Locked Semiconductor Lasers Using an Equivalent Electrical Circuit. Electronics 2021, 10, 2409. https://doi.org/10.3390/electronics10192409
Bae H-J, Cho J-H, Sung H-K. Modulation Performance Enhancement of Directly Modulated Injection-Locked Semiconductor Lasers Using an Equivalent Electrical Circuit. Electronics. 2021; 10(19):2409. https://doi.org/10.3390/electronics10192409
Chicago/Turabian StyleBae, Ho-Jun, Jun-Hyung Cho, and Hyuk-Kee Sung. 2021. "Modulation Performance Enhancement of Directly Modulated Injection-Locked Semiconductor Lasers Using an Equivalent Electrical Circuit" Electronics 10, no. 19: 2409. https://doi.org/10.3390/electronics10192409
APA StyleBae, H.-J., Cho, J.-H., & Sung, H.-K. (2021). Modulation Performance Enhancement of Directly Modulated Injection-Locked Semiconductor Lasers Using an Equivalent Electrical Circuit. Electronics, 10(19), 2409. https://doi.org/10.3390/electronics10192409

