- Communication
A Novel Program Scheme for Z-Interference Improvement in 3D NAND Flash Memory
- Jianquan Jia,
- Lei Jin,
- Xinlei Jia and
- Kaikai You
With gate length (Lg) and gate spacing length (Ls) shrinkage, the cell-to-cell z-interference phenomenon is increasingly severe in 3D NAND charge-trap memory. It has become one of the key reliability concerns for 3D NAND cell scaling. In this work, z...

