Search Results (1,759)

In this study, we propose a bidirectional chemical sensor platform based on a reconfigurable ion-sensitive field-effect transistor (R-ISFET) architecture. The device incorporates Ni-silicide Schottky barrier source/drain (S/D) contacts, enabling ambipolar conduction and bidirectional turn-on behavior for both p-type and n-type configurations. Channel polarity is dynamically controlled via the program gate (PG), while the control gate (CG) suppresses leakage current, enhancing operational stability and energy efficiency. A dual-control-gate (DCG) structure enhances capacitive coupling, enabling sensitivity beyond the Nernst limit without external amplification. The extended-gate (EG) architecture physically separates the transistor and sensing regions, improving durability and long-term reliability. Electrical characteristics were evaluated through transfer and output curves, and carrier transport mechanisms were analyzed using band diagrams. Sensor performance—including sensitivity, hysteresis, and drift—was assessed under various pH conditions and external noise up to 5 V_pp (i.e., peak-to-peak voltage). The n-type configuration exhibited high mobility and fast response, while the p-type configuration demonstrated excellent noise immunity and low drift. Both modes showed consistent sensitivity trends, confirming the feasibility of complementary sensing. These results indicate that the proposed R-ISFET sensor enables selective mode switching for high sensitivity and robust operation, offering strong potential for next-generation biosensing and chemical detection. Full article

An Analog-to-Digital Converter (ADC) is an indispensable part of image sensor systems. This paper presents a silicon-based 13-bit 100 kS/s two-step single-slope analog-to-digital converter (TS-SS ADC) for infrared image sensors with a frame rate of 100 Hz. For the charge leakage and offset voltage issues inherent in conventional TS-SS ADC, a four-terminal comparator was employed to resolve the fine ramp voltage offset caused by charge redistribution in storage and parasitic capacitors. In addition, a current-steering digital-to-analog converter (DAC) was adopted to calibrate the voltage reference of the dynamic comparator and mitigate differential nonlinearity (DNL)/integral nonlinearity (INL). To eliminate quantization dead zones, a 1-bit redundancy was incorporated into the fine quantization circuit. Finally, the quantization scheme consisted of 7-bit coarse quantization followed by 7-bit fine quantization. The ADC was implemented using an SMIC 55 nm processSemiconductor Manufacturing International Corporation, Shanghai, China. The post-simulation results show that when the power supply is 3.3 V, the ADC achieves a quantization range of 1.3 V–3 V. Operating at a 100 kS/s sampling rate, the proposed ADC exhibits an effective number of bits (ENOBs) of 11.86, a spurious-free dynamic range (SFDR) of 97.45 dB, and a signal-to-noise-and-distortion ratio (SNDR) of 73.13 dB. The power consumption of the ADC was 22.18 mW. Full article

Currently, the trade-off between oxygen permeation flux and structural stability in conventional perovskite oxides restricts the practical application of oxygen permeable membranes. In this study, a high-entropy design was applied to the B-site of BSCF matrix materials, resulting in the successful synthesis of a high-entropy perovskite, Ba_0.5Sr_0.5Co_0.71Fe_0.2Ta_0.03Ni_0.03Zr_0.03O_3−δ. The crystal structure, microstructure, and elemental composition of the material were systematically characterized and analyzed. Theoretical analysis and experimental characterization confirm that the material exhibits a stable single-phase high-entropy perovskite oxide structure. Under He as the sweep gas, the membrane achieved an oxygen permeation flux of 1.28 mL·cm⁻²·min⁻¹ and operated stably for over 100 h (1 mm thick, 900 °C). In a 20% CO₂/He atmosphere, the flux remained above 0.92 mL·cm⁻²·min⁻¹ for over 100 h, demonstrating good CO₂ tolerance. Notably, when the sweep gas is returned to the pure He atmosphere, the oxygen permeation flux fully recovers to 1.28 mL·cm⁻²·min⁻¹, with no evidence of leakage. These findings indicate that the proposed B-site doping strategy can break the trade-off between oxygen permeability and structural stability in conventional perovskite membranes. This advancement supports the industrialization of oxygen permeable membranes and offers valuable theoretical guidance for the design of high-performance perovskite materials. Full article

Permanent magnetic couplings provide critical advantages for deep-sea systems through static-sealed, contactless power transmission. However, conventional metallic isolation sleeves incur significant eddy current losses, limiting efficiency and high-speed operation. Limited torque capacities fail to meet the operational demands of harsh marine environments. This study presents a novel permanent magnet coupling featuring a ceramic isolation sleeve engineered for deep-sea cryogenic ammonia submersible pumps. The ceramic sleeve eliminates eddy current losses and provides exceptional corrosion resistance in acidic/alkaline environments. To withstand 3.5 MPa hydrostatic pressure, a 6-mm-thick sleeve necessitates a 10 mm operational air gap, challenging magnetic circuit efficiency. To address this limitation, an improved 3D magnetic equivalent circuit (MEC) model was developed that explicitly accounts for flux leakage and axial end-effects, enabling the accurate characterization of large air gap fields. Leveraging this model, a Taguchi method-based optimization framework was implemented by balancing key parameters to maximize the torque density. This co-design strategy achieved a 21% increase in torque density, enabling higher torque transfer per unit volume. Experimental validation demonstrated a maximum torque of 920 Nm, with stable performance under simulated deep-sea conditions. This design establishes a new paradigm for high-power leak-free transmission in corrosive, high-pressure marine environments, advancing applications from deep-sea propulsion to offshore energy systems. Full article

The development of an integrated circuit faces the challenge of the physical limit of Moore’s Law. One of the most important “Beyond Moore” challenges is the scaling down of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) versus their increasing static power consumption. This is because, at room temperature, the thermal emission transportation mechanism will cause a physical limitation on subthreshold swing (SS), which is fundamentally limited to a minimum value of 60 mV/decade for MOSFETs, and accompanied by an increase in off-state leakage current with the process of scaling down. Moreover, the impacts of short-channel effects on device performance also become an increasingly severe problem with channel length scaling down. Due to the band-to-band tunneling mechanism, Tunnel Field-Effect Transistors (TFETs) can reach a far lower SS than MOSFETs. Recent research works indicated that TFETs are already becoming some of the promising candidates of conventional MOSFETs for ultra-low-power applications. This paper provides a review of some advances in materials and structures along the evolutionary process of TFETs. An in-depth discussion of both experimental works and simulation works is conducted. Furthermore, the performance of TFETs with different structures and materials is explored in detail as well, covering Si, Ge, III-V compounds and 2D materials, alongside different innovative device structures. Additionally, this work provides an outlook on the prospects of TFETs in future ultra-low-power electronics and biosensor applications. Full article

This work presents an innovative hydrothermal approach for fabricating flexible piezoelectric PZT thin films on 20 μm titanium foil substrates using TiO₂ and SrTiO₃ (STO) interlayers. Three heterostructures (Ti/PZT, Ti/TiO₂/PZT, and Ti/TiO₂/STO/PZT) were synthesized to enable low-temperature growth and improve ferroelectric performance for advanced flexible MEMS. Characterizations including XRD, PFM, and P–E loop analysis evaluated crystallinity, piezoelectric coefficient d₃₃, and polarization behavior. The results demonstrate that the multilayered Ti/TiO₂/STO/PZT structure significantly enhances performance. XRD confirmed the STO buffer layer effectively reduces lattice mismatch with PZT to ~0.76%, promoting stable morphotropic phase boundary (MPB) composition formation. This optimized film exhibited superior piezoelectric and ferroelectric properties, with a high d₃₃ of 113.42 pm/V, representing an ~8.65% increase over unbuffered Ti/PZT samples, and displayed more uniform domain behavior in PFM imaging. Impedance spectroscopy showed the lowest minimum impedance of 8.96 Ω at 10.19 MHz, indicating strong electromechanical coupling. Furthermore, I–V measurements demonstrated significantly suppressed leakage currents in the STO-buffered samples, with current levels ranging from 10⁻¹² A to 10⁻⁹ A over ±3 V. This structure also showed excellent fatigue endurance through one million electrical cycles, confirming its mechanical and electrical stability. These findings highlight the potential of this hydrothermally engineered flexible heterostructure for high-performance actuators and sensors in advanced MEMS applications. Full article

In this study, Hf_0.5Zr_0.5O₂ (HZO) thin-films were deposited using a Co-plasma atomic layer deposition (CPALD) process that combined both remote plasma and direct plasma, for the development of ferroelectric memory devices. Ferroelectric capacitors with a symmetric hybrid TiN/W/HZO/W/TiN electrode structure, incorporating W electrodes as insertion layers, were fabricated. Rapid thermal annealing (RTA) was subsequently employed to control the crystalline phase of the films. The electrical and structural properties of the capacitors were analyzed based on the RTA temperature, and the presence, thickness, and position of the W insertion electrode layer. Consequently, the capacitor with 5 nm-thick W electrode layers inserted on both the top and bottom sides and annealed at 700 °C exhibited the highest remnant polarization (2P_r = 61.0 μC/cm²). Moreover, the symmetric hybrid electrode capacitors annealed at 500–600 °C also exhibited high 2P_r values of approximately 50.4 μC/cm², with a leakage current density of approximately 4 × 10⁻⁵ A/cm² under an electric field of 2.5 MV/cm. The findings of this study are expected to contribute to the development of electrode structures for improved performance of HZO-based ferroelectric memory devices. Full article

Alkaline electrolytic water hydrogen generation, a key driver in the growth of hydrogen energy, heavily relies on high-efficiency and high-purity ion exchange membranes. In this study, three-dimensional (3D) wrinkled reduced graphene oxide (WG) nanosheets obtained through a simple thermal reduction process and two-dimensional (2D) graphene oxide act as building blocks, with ethylenediamine as a crosslinking stabilizer, to construct a unique 3D/2D 2 nm-tunneling structure between the GO and WG sheets through via an amide connection at a WG/GO ratio of 1:1. Here, the wrinkled graphene (WG) undergoes a transition from two-dimensional (2D) graphene oxide (GO) into three-dimensional (3D) through the adjustment of surface energy. By increasing the interlayer spacing and the number of ion fluid channels within the membranes, the E-W/G membrane has achieved the rapid passage of hydroxide ions (OH⁻) and simultaneous isolation of produced gas molecules. Moreover, the dense 2 nm nano-tunneling structure in the electrolytic water process enables the E-W/G membrane to attain current densities >99.9% and an extremely low gas crossover rate of hydrogen and oxygen. This result suggests that the as-prepared membrane effectively restricts the unwanted crossover of gases between the anode and cathode compartments, leading to improved efficiency and reduced gas leakage during electrolysis. By enhancing the purity of the hydrogen production industry and facilitating the energy transition, our strategy holds great potential for realizing the widespread utilization of hydrogen energy. Full article

Carbon nanotube field-effect transistors (CNTFETs) are becoming a strong competitor for the next generation of high-performance, energy-efficient integrated circuits due to their near-ballistic carrier transport characteristics and excellent suppression of short-channel effects. However, CNT FETs with large diameters and small band gaps exhibit obvious bipolarity, and gate-induced drain leakage (GIDL) contributes significantly to the off-state leakage current. Although the asymmetric gate strategy and feedback gate (FBG) structures proposed so far have shown the potential to suppress CNT FET leakage currents, the devices still lack scalability. Based on the analysis of the conduction mechanism of existing self-aligned gate structures, this study innovatively proposed a design strategy to extend the length of the source–drain epitaxial region (L_ext) under a vertically stacked architecture. While maintaining a high drive current, this structure effectively suppresses the quantum tunneling effect on the drain side, thereby reducing the off-state leakage current (I_off = 10⁻¹⁰ A), and has good scaling characteristics and leakage current suppression characteristics between gate lengths of 200 nm and 25 nm. For the sidewall gate architecture, this work also uses single-walled carbon nanotubes (SWCNTs) as the channel material and uses metal source and drain electrodes with good work function matching to achieve low-resistance ohmic contact. This solution has significant advantages in structural adjustability and contact quality and can significantly reduce the off-state current (I_off = 10⁻¹⁴ A). At the same time, it can solve the problem of off-state current suppression failure when the gate length of the vertical stacking structure is 10 nm (the total channel length is 30 nm) and has good scalability. Full article

As transistor dimensions continue to scale below 10 nm, traditional MOSFET architectures face increasing limitations from short-channel effects, gate leakage, and variability. FinFETs, especially junctionless FinFETs on silicon-on-insulator (SOI) substrates, offer improved electrostatic control and simplified fabrication, making them attractive for deeply scaled nodes. In this work, we propose a novel Stepped-Spacer Structured FinFET (S³-FinFET) that incorporates a three-layer HfO₂/Si₃N₄/HfO₂ spacer configuration designed to enhance electrostatics and suppress parasitic effects. Using 2D TCAD simulations, the S³-FinFET is evaluated in terms of key performance metrics, including transfer/output characteristics, ON/OFF current ratio, subthreshold swing (SS), drain-induced barrier lowering (DIBL), gate capacitance, and cut-off frequency. The results show significant improvements in leakage control and high-frequency behavior. These enhancements make the S³-FinFET particularly well-suited for Field-Programmable Gate Arrays (FPGAs), where power efficiency, speed, and signal integrity are critical to performance in reconfigurable logic environments. Full article

In the deep integration process between digital infrastructure and new economic forms, structural imbalance between the evolution rate of cloud storage technology and the growth rate of data-sharing demands has caused systemic security vulnerabilities such as blurred data sovereignty boundaries and nonlinear surges in privacy leakage risks. Existing academic research indicates current proxy re-encryption schemes remain insufficient for cloud access control scenarios characterized by diversified user requirements and personalized permission management, thus failing to fulfill the security needs of emerging computing paradigms. To resolve these issues, a revocable attribute-based proxy re-encryption scheme supporting policy-hiding is proposed. Data owners encrypt data and upload it to the blockchain while concealing attribute values within attribute-based encryption access policies, effectively preventing sensitive information leaks and achieving fine-grained secure data sharing. Simultaneously, proxy re-encryption technology enables verifiable outsourcing of complex computations. Furthermore, the SM3 (SM3 Cryptographic Hash Algorithm) hash function is embedded in user private key generation, and key updates are executed using fresh random factors to revoke malicious users. Ultimately, the scheme proves indistinguishability under chosen-plaintext attacks for specific access structures in the standard model. Experimental simulations confirm that compared with existing schemes, this solution delivers higher execution efficiency in both encryption/decryption and revocation phases. Full article

Nanoparticle floating gate (NPFG) transistors have gained attention as synaptic devices due to their discrete charge storage capability, which minimizes leakage currents and enhances the memory window. In this study, we propose and evaluate a mesh-type floating gate transistor (Mesh-FGT) designed to emulate the characteristics of NPFG transistors. Individual floating gates with dimensions of 3 µm × 3 µm are arranged in an array configuration to form the floating gate structure. The Mesh-FGT is composed of an Al/Pt/Cr/HfO₂/Pt/Cr/HfO₂/SiO₂/SOI (silicon-on-insulator) stack. Threshold voltages (Vth) extracted from the transfer and output curves followed Gaussian distributions with means of 0.063 V (σ = 0.100 V) and 1.810 V (σ = 0.190 V) for the erase (ERS) and program (PGM) states, respectively. Synaptic potentiation and depression were successfully demonstrated in a multi-level implementation by varying the drain current (I_ds) and Vth. The Mesh-FGT exhibited high immunity to leakage current, excellent repeatability and retention, and a stable memory window that initially measured 2.4 V. These findings underscore the potential of the Mesh-FGT as a high-performance neuromorphic device, with promising applications in array device architectures and neuromorphic neural network implementations. Full article

Disruption of the microbiota resulting in pathogenicity is known as dysbiosis and is key in the pathogenesis of inflammatory bowel disease [IBD]. The microbiome of patients with IBD is characterized by depletion of commensal bacteria, in particular Bacteroidetes and the Lachnospiraceae subgroup of Firmicutes, and by the concomitant increase in Proteobacteria and the Bacillus subgroup of Firmicutes. These changes reflect a decrease in microbial diversity with a concomitant decrease in health-promoting bacteria like Faecalibacterium and Roseburia. Treatment with biologic agents has changed the natural course of disease, improving patient outcomes. Changes in gut microbiota occur under treatment with biologic agents and act towards reversal of dysbiosis. These changes are more striking in patients achieving remission and specific gut microbiota signatures may be predictive of treatment response and a step towards precision medicine, since, despite advances in medical treatment, some patients are at risk of surgery and subsequent complications such as anastomotic leakage. This review summarizes current available evidence on the interplay of gut microbiota and biologic agents, surgery, and surgical complications in patients with IBD. Full article

Internal leakage within the valve body constitutes a severe potential safety hazard in industrial fluid control systems, attributable to its high concealment and the resultant difficulty in detection via conventional methodologies. Acoustic emission (AE) technology, functioning as an efficient non-destructive testing approach, is capable of capturing the transient stress waves induced by leakage, thereby furnishing an effective means for the real-time monitoring and quantitative assessment of internal leakage within the valve body. This paper conducts a systematic review of the theoretical foundations, signal-processing methodologies, and the latest research advancements related to the technology for detecting internal leakage in the valve body based on acoustic emission. Firstly, grounded in Lechlier’s acoustic analogy theory, the generation mechanism of acoustic emission signals arising from valve body leakage is elucidated. Secondly, a detailed analysis is conducted on diverse signal processing techniques and their corresponding optimization strategies, encompassing parameter analysis, time–frequency analysis, nonlinear dynamics methods, and intelligent algorithms. Moreover, this paper recapitulates the current challenges encountered by this technology and delineates future research orientations, such as the fusion of multi-modal sensors, the deployment of lightweight deep learning models, and integration with the Internet of Things. This study provides a systematic reference for the engineering application and theoretical development of the acoustic emission-based technology for detecting internal leakage in valves. Full article