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Eco-Sustainable Designing of Metal Oxide Thin Films with High Properties Using Advanced Micro–and Nanofabrication Technologies

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: 20 February 2026 | Viewed by 879

Special Issue Editors


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Guest Editor
Laser Department, National Institute of Laser, Plasma and Radiation Physics, 077125 Magurele, Romania
Interests: thin films; oxide materials; n-type tradition materials (doped ZnO, SnO2, In2O3, as well as their ternary and quaternary counterparts); CIGS solar cells, RF magnetron sputtering and vacuum thermal evaporation techniques; binary semiconductors (CdS, CdSe, ZnTe, ZnSe); ZnTe/CdSe heterojunctions; metasurfaces/ metamaterials
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
National Institute of Materials Physics (NIMP), Atomistilor 405A, 077125 Magurele, Romania
Interests: SiGeSn-based nanomaterials; 2D materials; group IV nanocrystals embedded into dielectrics; high-k gate oxides; magnetron sputtering; thermal evaporation assisted by e-beam, charge storage and opto-electric properties; VIS-SWIR bandgap of group IV alloys; sensors; photodetectors; nonvolatile memories
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Due to their unique physical, chemical, and electrical properties, metal oxide thin films contribute to advanced technologies such as electronics, optoelectronics, and renewable energy systems.

This Special Issue focuses on novel advances and offers unique opportunities for metal oxides to integrate diverse optical, electrical, magnetic, mechanical, and chemical properties for various applications. Advanced micro- and nanofabrication technologies, atomic layer deposition, chemical vapor deposition, pulsed laser deposition, or magnetron sputtering offer the capability of controlling film thickness, composition, and microstructure with a high degree of precision, keys to enabling optimization of their functional properties. These sustainable fabrication strategies underline the reduction in resource consumption and the use of green precursors. In addition, nanostructuring techniques enhance the transparency, conductivity, and photocatalytic activity by tailoring the films' morphology and crystalline structure. Integrating computational modeling and machine learning significantly accelerates the discovery of novel materials and processing conditions. Applications of eco-sustainably designed metal oxide thin films span from photovoltaics, sensors, and transistors to energy storage systems, which have become the backbone of green technologies. Thus, the field holds tremendous potential for tackling global challenges regarding energy, sustainability, and technology advancement.

Dr. Petronela Garoi
Dr. Ionel Stavarache
Guest Editors

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Keywords

  • metal oxid
  • thin films
  • advanced deposition
  • structural and optical properties
  • transparent contact
  • sensors
  • floating gate memories

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Published Papers (1 paper)

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Research

13 pages, 3623 KB  
Article
Fabrication and Characterization of Ferroelectric Capacitors with a Symmetric Hybrid TiN/W/HZO/W/TiN Electrode Structure
by Ha-Jung Kim, Jae-Hyuk Choi, Seong-Eui Lee, So-Won Kim and Hee-Chul Lee
Materials 2025, 18(15), 3547; https://doi.org/10.3390/ma18153547 - 29 Jul 2025
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Abstract
In this study, Hf0.5Zr0.5O2 (HZO) thin-films were deposited using a Co-plasma atomic layer deposition (CPALD) process that combined both remote plasma and direct plasma, for the development of ferroelectric memory devices. Ferroelectric capacitors with a symmetric hybrid TiN/W/HZO/W/TiN [...] Read more.
In this study, Hf0.5Zr0.5O2 (HZO) thin-films were deposited using a Co-plasma atomic layer deposition (CPALD) process that combined both remote plasma and direct plasma, for the development of ferroelectric memory devices. Ferroelectric capacitors with a symmetric hybrid TiN/W/HZO/W/TiN electrode structure, incorporating W electrodes as insertion layers, were fabricated. Rapid thermal annealing (RTA) was subsequently employed to control the crystalline phase of the films. The electrical and structural properties of the capacitors were analyzed based on the RTA temperature, and the presence, thickness, and position of the W insertion electrode layer. Consequently, the capacitor with 5 nm-thick W electrode layers inserted on both the top and bottom sides and annealed at 700 °C exhibited the highest remnant polarization (2Pr = 61.0 μC/cm2). Moreover, the symmetric hybrid electrode capacitors annealed at 500–600 °C also exhibited high 2Pr values of approximately 50.4 μC/cm2, with a leakage current density of approximately 4 × 10−5 A/cm2 under an electric field of 2.5 MV/cm. The findings of this study are expected to contribute to the development of electrode structures for improved performance of HZO-based ferroelectric memory devices. Full article
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