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Micromachines
Special Issues
Recent Advances and Challenges in Nanoscale and Microscale Semiconductor Devices
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Recent Advances and Challenges in Nanoscale and Microscale Semiconductor Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 30 November 2025 | Viewed by 2076

Special Issue Editors

Dr. Zeinab Ramezani

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, University of Miami, Coral Gables, FL 33416, USA
Interests: semiconductor physics and devices; power devices; nanoelectronics; biosensor; nanomagnetic; neuromorphic computing devices
Special Issues, Collections and Topics in MDPI journals
Dr. Seyed Amir Ghoreishi

E-Mail Website
Guest Editor
Department of Materials Science and Engineering, Arizona State University, Tempe, AZ 85287, USA
Interests: semiconductor physics and devices; power devices; advanced material science; reliability and characterization; AI

Special Issue Information

Dear Colleagues,

The recent advancements in nanoscale and microscale semiconductor devices have led to groundbreaking applications across various domains, from high-performance computing and mobile devices to advanced sensors and energy-efficient technologies. Nanoscale devices, including FETs, TFETs, FinFETs, and single-electron devices, have demonstrated exceptional properties that enable new functionalities in areas such as data storage, spintronics, and biosensing. Simultaneously, the evolution of power devices has been driven by innovations in materials, which have transformed traditional power systems and opened possibilities for high-efficiency power conversion and control in industrial automation and renewable energy systems.

This issue aims to explore the recent advances and challenges in these semiconductor technologies, with a particular focus on the integration of nanoscale and microscale devices. Key topics include the impact of the short-channel effect on all scale transistors and strategies to mitigate its effects, reliability issues that affect long-term performance, and the latest developments in low- and high-power devices. By exploring these advanced innovations and addressing their related challenges, this Special Issue aims to offer crucial insights into future trends and opportunities in semiconductor devices and technology as well as advanced materials science.

Dr. Zeinab Ramezani
Dr. Seyed Amir Ghoreishi
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nano transistors
  • short-channel effects
  • FinFETs
  • FET biosensors
  • power devices
  • semiconductor technology

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Published Papers (2 papers)

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Research

11 pages, 1773 KiB  
Article
Design and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter
by Bin Wang, Ziyuan Tang, Yuxiang Song, Lu Liu, Weitao Yang and Longsheng Wu
Micromachines 2025, 16(1), 106; https://doi.org/10.3390/mi16010106 - 17 Jan 2025
Viewed by 878
Abstract
In this paper, a novel p-type junctionless field effect transistor (PJLFET) based on a partially depleted silicon-on-insulator (PD-SOI) is proposed and investigated. The novel PJLFET integrates a buried N+-doped layer under the channel to enable the device to be turned off, leading to [...] Read more.
In this paper, a novel p-type junctionless field effect transistor (PJLFET) based on a partially depleted silicon-on-insulator (PD-SOI) is proposed and investigated. The novel PJLFET integrates a buried N+-doped layer under the channel to enable the device to be turned off, leading to a special work mechanism and optimized performance. Simulation results show that the proposed PJLFET demonstrates an Ion/Ioff ratio of more than seven orders of magnitude, with Ion reaching up to 2.56 × 10−4 A/μm, Ioff as low as 3.99 × 10−12 A/μm, and a threshold voltage reduced to −0.43 V, exhibiting excellent electrical characteristics. Furthermore, a new CMOS inverter comprising a proposed PJLFET and a conventional NMOSFET is designed. With the identical geometric dimensions and gate electrode, the pull-up and pull-down driving capabilities of the proposed CMOS are equivalent, showing the potential for application in high-performance chips in the future. Full article
(This article belongs to the Special Issue Recent Advances and Challenges in Nanoscale and Microscale Semiconductor Devices)
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14 pages, 1880 KiB  
Article
Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing
by Mohammed Tanvir Quddus, Alvaro D. Latorre-Rey, Zeinab Ramezani and Mihir Mudholkar
Micromachines 2025, 16(1), 90; https://doi.org/10.3390/mi16010090 - 14 Jan 2025
Viewed by 865
Abstract
Trench MOS Barrier Schottky (TMBS) rectifiers offer superior static and dynamic electrical characteristics when compared with planar Schottky rectifiers for a given active die size. The unique structure of TMBS devices allows for efficient manipulation of the electric field, enabling higher doping concentrations [...] Read more.
Trench MOS Barrier Schottky (TMBS) rectifiers offer superior static and dynamic electrical characteristics when compared with planar Schottky rectifiers for a given active die size. The unique structure of TMBS devices allows for efficient manipulation of the electric field, enabling higher doping concentrations in the drift region and thus achieving a lower forward voltage drop (VF) and reduced leakage current (IR) while maintaining high breakdown voltage (BV). While the use of trenches to push electric fields away from the mesa surface is a widely employed concept for vertical power devices, a significant gap exists in the analytical modeling of this effect, with most prior studies relying heavily on computationally intensive numerical simulations. This paper introduces a new physics-based analytical model to elucidate the behavior of electric field and potential in the mesa region of a TMBS rectifier in reverse bias. Our model leverages the concept of shared charge between the Schottky and MOS junctions, capturing how electric field distribution is altered in response to trench geometry and bias conditions. This shared charge approach not only simplifies the analysis of electric field distribution but also reveals key design parameters, such as trench depth, oxide thickness, and doping concentration, that influence device performance. This model employs the concept of shared charge between the vertical Schottky and MOS junction. Additionally, it provides a detailed view of the electric field suppression mechanism in the TMBS device, highlighting the significant effects of the inversion charge on the MOS interface. By comparing our analytical results with TCAD simulations, we demonstrate strong agreement, underscoring the model’s accuracy and its potential to serve as a more accessible alternative to resource-intensive simulations. This work contributes to a valuable tool for TMBS device design, offering insights into electric field management that support high-efficiency, high-voltage applications, including power supplies, automotive electronics, and renewable energy systems. Full article
(This article belongs to the Special Issue Recent Advances and Challenges in Nanoscale and Microscale Semiconductor Devices)
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