You are currently on the new version of our website. Access the old version .

11 Results Found

  • Article
  • Open Access
9 Citations
2,363 Views
30 Pages

Structure, Optical Properties and Physicochemical Features of LiNbO3:Mg,B Crystals Grown in a Single Technological Cycle: An Optical Material for Converting Laser Radiation

  • Mikhail Palatnikov,
  • Olga Makarova,
  • Alexandra Kadetova,
  • Nikolay Sidorov,
  • Natalya Teplyakova,
  • Irina Biryukova and
  • Olga Tokko

23 June 2023

Two series of LiNbO3:Mg:B crystals have been grown and studied. Two doping methods—have been used. The crystals—have been co-doped with Mg and a non-metallic dopant, B. The physicochemical features of the growth—have been considered...

  • Article
  • Open Access
6 Citations
3,708 Views
10 Pages

30 December 2020

For bulk doping, boron and phosphorus are usually used as p-type and n-type dopants, respectively. The distribution of these dopant concentrations in a silicon crystal along the vertical direction is governed by the segregation phenomena. As the segr...

  • Article
  • Open Access
5 Citations
4,022 Views
20 Pages

Numerical Simulation of Species Segregation and 2D Distribution in the Floating Zone Silicon Crystals

  • Kirils Surovovs,
  • Maksims Surovovs,
  • Andrejs Sabanskis,
  • Jānis Virbulis,
  • Kaspars Dadzis,
  • Robert Menzel and
  • Nikolay Abrosimov

26 November 2022

The distribution of dopants and impurities in silicon grown with the floating zone method determines the electrical resistivity and other important properties of the crystals. A crucial process that defines the transport of these species is the segre...

  • Article
  • Open Access
3 Citations
10,702 Views
16 Pages

30 March 2011

The determination of optical parameters, such as absorption and extinction coefficients, refractive index and the bandgap energy, is crucial to understand the behavior and final efficiency of thin film solar cells based on hydrogenated amorphous sili...

  • Article
  • Open Access
4 Citations
1,824 Views
11 Pages

9 March 2023

Superficial modifications on silicon wafers produced by single-shot focused femtosecond laser irradiation having a 1030 nm wavelength and 300 fs pulse duration were experimentally and theoretically analyzed. The laser fluence window when the amorphou...

  • Article
  • Open Access
5 Citations
3,001 Views
17 Pages

4 December 2022

In fabricating advanced silicon (Si)-based metal–oxide semiconductors, the ability to inspect dopant distribution in Si ultrathin films (tens of nm) is crucial for monitoring the amount of dopant diffusion. Here, we perform an anisotropic refle...

  • Article
  • Open Access
1 Citations
2,621 Views
9 Pages

The Impact of BiF3 Doping on the Yb3+ to Yb2+ Reduction during the LiYF4:Yb3+ Crystal-Growth Process

  • Amir Khadiev,
  • Niyaz Akhmetov,
  • Stella Korableva,
  • Oleg Morozov,
  • Alexey Nizamutdinov,
  • Vadim Semashko,
  • Maksim Pudovkin and
  • Marat Gafurov

6 December 2022

Here, we report on the opportunity to suppress Yb3+ to Yb2+ dopant-ion reduction in LiYbxY1−xF4 mixed crystals during growth processes, using the Bridgmen–Stocbarger technique in graphite crucibles in vacuum. This was carried out by the a...

  • Article
  • Open Access
3 Citations
1,883 Views
15 Pages

Influence of Surface Sputtering during High-Intensity, Hot Ion Implantation on Deep Alloying of Martensitic Stainless Steel

  • Alexander Ryabchikov,
  • Olga Korneva,
  • Anna Ivanova,
  • Sergey Dektyarev,
  • Dimitriy Vakhrushev and
  • Alexander Gurulev

16 September 2023

This article is devoted to the study of the effect of ion sputtering on the alloy surface, using the example of martensitic stainless steel AISI 420 with ultrahigh-dose, high-intensity nitrogen ion implantation on the efficiency of accumulation and t...

  • Article
  • Open Access
824 Views
15 Pages

Calibration of a Melt Flow Model for Silicon Crystal Growth with the Floating Zone Method

  • Kirils Surovovs,
  • Stanislavs Luka Strozevs,
  • Maksims Surovovs,
  • Robert Menzel,
  • Gundars Ratnieks and
  • Janis Virbulis

21 July 2025

The numerical modelling of the melt flow in Si crystal growth plays an important role for improving the resistivity distribution of crystals grown in industrial processes. However, recent series of experiments have shown that the existing numerical m...

  • Article
  • Open Access
2 Citations
2,773 Views
16 Pages

N-Type Coating of Single-Walled Carbon Nanotubes by Polydopamine-Mediated Nickel Metallization

  • Cordelia Zimmerer,
  • Frank Simon,
  • Sascha Putzke,
  • Astrid Drechsler,
  • Andreas Janke and
  • Beate Krause

23 October 2023

Single-walled carbon nanotubes (SWCNTs) have unique thermal and electrical properties. Coating them with a thin metal layer can provide promising materials for many applications. This study presents a bio-inspired, environmentally friendly technique...

  • Article
  • Open Access
30 Citations
5,597 Views
11 Pages

First-Principles Study of Optoelectronic Properties of the Noble Metal (Ag and Pd) Doped BiOX (X = F, Cl, Br, and I) Photocatalytic System

  • Shixiong Zhou,
  • Tingting Shi,
  • Zhihong Chen,
  • Dmitri S. Kilin,
  • Lingling Shui,
  • Mingliang Jin,
  • Zichuan Yi,
  • Mingzhe Yuan,
  • Nan Li and
  • Guofu Zhou
  • + 2 authors

21 February 2019

To explore the photocatalytic performances and optoelectronic properties of pure and doped bismuth oxyhalides D-doped BiOX (D = Ag, Pd; X = F, Cl, Br, I) compounds, their atomic properties, electronic structures, and optical properties were systemati...