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Investigation of Optimum Mg Doping Content and Annealing Parameters of Cu2MgxZn1−xSnS4 Thin Films for Solar Cells

1
Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, China
2
State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130012, China
*
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(7), 955; https://doi.org/10.3390/nano9070955
Received: 18 May 2019 / Revised: 6 June 2019 / Accepted: 7 June 2019 / Published: 30 June 2019
(This article belongs to the Special Issue Synthesis and Modification of Nanostructured Thin Films)
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Abstract

Cu2MgxZn1−xSnS4 (0 ≤ x ≤0.6) thin films were prepared by a simple, low-temperature (300 °C) and low-cost sol–gel spin coating method followed by post-annealing at optimum conditions. We optimized the annealing conditions and investigated the effect of Mg content on the crystalline quality, electrical and optical performances of the Cu2MgxZn1−xSnS4 thin films. It was found that the Cu2MgxZn1−xSnS4 film annealed at 580 °C for 60 min contained large grain, less grain boundaries and high carrier concentration. Pure phase kesterite Cu2MgxZn1−xSnS4 (0 ≤ x ≤ 0.6) thin films were obtained by using optimal annealing conditions; notably, the smaller Zn2+ ions in the Cu2ZnSnS4 lattice were replaced by larger Mg2+ ions. With an increase in x from 0 to 0.6, the band gap energy of the films decreased from 1.43 to 1.29 eV. When the ratio of Mg/Mg + Zn is 0.2 (x = 0.2), the grain size of Cu2MgxZn1−xSnS4 reaches a maximum value of 1.5 μm and the surface morphology is smooth and dense. Simultaneously, the electrical performance of Cu2MgxZn1−xSnS4 thin film is optimized at x = 0.2, the carrier concentration reaches a maximum value of 3.29 × 1018 cm−3. View Full-Text
Keywords: Cu2MgxZn1−xSnS4; thin films; photoelectric performance; sol–gel; sulfuration treatment; solar cell Cu2MgxZn1−xSnS4; thin films; photoelectric performance; sol–gel; sulfuration treatment; solar cell
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Sui, Y.; Zhang, Y.; Jiang, D.; He, W.; Wang, Z.; Wang, F.; Yao, B.; Yang, L. Investigation of Optimum Mg Doping Content and Annealing Parameters of Cu2MgxZn1−xSnS4 Thin Films for Solar Cells. Nanomaterials 2019, 9, 955.

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