Silicon Based Nanostructures for Nanoelectronics
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".
Deadline for manuscript submissions: closed (20 August 2021) | Viewed by 2234
Special Issue Editors
Interests: nanofabrication and characterization of novel suspended silicon structures for nanoelectronics (NEMS, FETs and SETs) for biosensing applications. Light trapping architectures for enhanced solar absorption based on nanostructures
Interests: biological sensing based on multi-gate silicon field-effect transistors and electrochemical impedance spectroscopy; field-effect transistors based on the electrostatically-formed nanowire; light trapping based on arrays of nanostructures; photovoltaics; photocarrier collection; omnidirectional broadband absorption of solar radiation
Special Issues, Collections and Topics in MDPI journals
Interests: Development of nanofabrication processes for the realization of nanosensors and transducers for various applications, including nanophotonics, nanoelectromechanical systems, nanofluidics and acoustics.
Special Issue Information
Dear Colleagues,
The era extending since the late 20th century to our times has been termed the Silicon age due to the enormous contribution of microelectronics-based silicon to world economy and to our way of life. More recently, the advent of nanotechnology introduced electronics based on nanostructures, or nanoelectronics, defined as structures in which quantum mechanical effects needs to be accounted for, and more generally defined as structures with at least two dimensions that are in the range of several hundreds of nanometers. The advancement of silicon-based electronics into nanoelectronics is normally considered a disruptive technology that departs from traditional silicon devices in terms of fabrication, application, and performance among others.
Specifically, this Special Issue focuses on recent advancements in silicon nanoelectronics in terms of fabrication methods, electronic device designs (nanocircuitry), applications (optoelectronics, nanosensors, NEMS, quantum computers, energy production, medical diagnostics, etc.), hybrid electronic devices, etc.
This Special Issue is opened to original research articles, as well as review papers, that potentially help researchers worldwide to understand the latest trend and progress in the silicon nanoelectronics research field.
Dr. Jordi Llobet
Dr. Gil Shalev
Dr. Carlos Calaza
Guest Editors
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- Field-effect and single electron transistors
- Photovoltaic cells
- Energy harvesting and storage
- Memory devices
- Optoelectronic devices (Photonic crystals, Quantum dots, Metamaterials…)
- Hybrid devices
- Fabrication methods: bottom-up, top-down
- Sensors: Bio-chemical sensors, field-effect sensors, radiation sensors, etc.
- Junctions: homojunctions, heterojunctions, hybrid junctions
- Photocarrier collection
- Silicon nanowires
- MEMS and NEMS
- Quantum computers
