Special Issue "Advanced Field-Effect Sensors"
Deadline for manuscript submissions: 28 February 2021.
Interests: field-effect transistors; tunneling transistors; nonvolatile memories; CMOS technologies; solid-state radiation detectors; field emission; optical and electrical properties of carbon nanotubes, graphene, and 2D materials; semiconductor heterojunctions and their application as photodetectors, solar cells, and chemical sensors; van der Waals heterojunctions of 2D-layered materials
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Sensor devices based on the field-effect principle have been used for more than fifty years in a variety of applications ranging from bio-chemical sensing to radiation detection or environmental parameters monitoring. The basic working principle of field-effect sensors is the same as that of field-effect transistors (FETs), in which the conductance between two electrodes (source and drain) is controlled by the electric field generated by a gate.
Field-effect biochemical sensors have found increasing applications for pH and molecular or DNA sensing since the proposal of the ion-sensitive field-effect transistor (ISFET) by Bergerveld in 1968.
Field-effect devices have been extensively exploited for gas and pressure sensing. Photo-FETs are popular light intensity sensors. FETs, both the junction (JFET) and metal-oxide-semiconductor (MOSFET) type, are widely used as photodetectors and ionizing radiation detectors or dosimeters in radioprotection, radiotherapy, medicine, and dentistry.
FETs enable sensitive temperature sensors and piezoelectric strain gauges.
The advent of nanostructured materials in the past three decades has created opportunities to integrate new sensing materials or develop innovative architectures in field-effect-based sensors. The optimization of existing devices, research on new field-effect structures and fabrication techniques, and the design of novel electronic systems for signal amplification and processing are currently underway.
A great advantage of field-effect sensors is that they provide intrinsic signal amplification and can be integrated with the electronics needed for the sensor signal processing on the same semiconductor chip. Moreover, field-effect sensors feature high sensitivity, low-cost, and miniaturization.
Field-effect based sensing offers several challenges stemming from the highly interdisciplinary nature of the problems encountered, in which knowledge of material science, surface chemistry and physics, biomolecular kinetics, electronic engineering, etc. are required.
This Special Issue will present recent progress in the fabrication, design, understanding, and utilization of field-effect sensors for any applications.
The Special Issues will collect research papers reporting novel experimental, theoretical, or simulation results dealing with field-effect sensors. Review articles that offer comprehensive coverage of specific aspects or new insights and perspectives are welcome.
Prof. Dr. Antonio Bartolomeo
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- Potentiometric sensors
- Floating gate, extended-gate, and dual-gate FET sensors
- Bio-chemical sensors
- pH sensing
- ISFET, EISFET, affinity-based FET
- Chemical field-effect transistor, ChemFET
- Biomolecular sensing, BioFET
- DNA FET
- Immunologically modified FET, IMFET
- Gas sensors, gasFET
- Photodetectors, Photo-FET
- Radiation sensitive FETs, RADFET
- FET dosimeters
- Pressure field-effect sensors
- Temperature field-effect sensors
- Field-effect strain sensors
- Nanomaterials in field-effect sensors
- Nanowire field-effect sensors
- 2D-material field-effect sensors
- Graphene field-effect sensors
- Signal amplification
- Sensor signal processing