Special Issue "Advanced Field-Effect Sensors"
Deadline for manuscript submissions: 31 December 2022 | Viewed by 12432
Interests: optical and electrical properties of nanostructured materials such as carbon nanotubes, graphene, and 2D materials; van der Waals heterostructures and Schottky junctions; field-effect transistors; non-volatile memories; solar cells; photodetectors; field emission devices
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Sensor devices based on the field-effect principle have been used for more than fifty years in a variety of applications ranging from bio-chemical sensing to radiation detection or environmental parameters monitoring. The basic working principle of field-effect sensors is the same as that of field-effect transistors (FETs), in which the conductance between two electrodes (source and drain) is controlled by the electric field generated by a gate.
Field-effect biochemical sensors have found increasing applications for pH and molecular or DNA sensing since the proposal of the ion-sensitive field-effect transistor (ISFET) by Bergerveld in 1968.
Field-effect devices have been extensively exploited for gas and pressure sensing. Photo-FETs are popular light intensity sensors. FETs, both the junction (JFET) and metal-oxide-semiconductor (MOSFET) type, are widely used as photodetectors and ionizing radiation detectors or dosimeters in radioprotection, radiotherapy, medicine, and dentistry.
FETs enable sensitive temperature sensors and piezoelectric strain gauges.
The advent of nanostructured materials in the past three decades has created opportunities to integrate new sensing materials or develop innovative architectures in field-effect-based sensors. The optimization of existing devices, research on new field-effect structures and fabrication techniques, and the design of novel electronic systems for signal amplification and processing are currently underway.
A great advantage of field-effect sensors is that they provide intrinsic signal amplification and can be integrated with the electronics needed for the sensor signal processing on the same semiconductor chip. Moreover, field-effect sensors feature high sensitivity, low-cost, and miniaturization.
Field-effect based sensing offers several challenges stemming from the highly interdisciplinary nature of the problems encountered, in which knowledge of material science, surface chemistry and physics, biomolecular kinetics, electronic engineering, etc. are required.
This Special Issue will present recent progress in the fabrication, design, understanding, and utilization of field-effect sensors for any applications.
The Special Issues will collect research papers reporting novel experimental, theoretical, or simulation results dealing with field-effect sensors. Review articles that offer comprehensive coverage of specific aspects or new insights and perspectives are welcome.
Prof. Dr. Antonio Bartolomeo
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- Potentiometric sensors
- Floating gate, extended-gate, and dual-gate FET sensors
- Bio-chemical sensors
- pH sensing
- ISFET, EISFET, affinity-based FET
- Chemical field-effect transistor, ChemFET
- Biomolecular sensing, BioFET
- DNA FET
- Immunologically modified FET, IMFET
- Gas sensors, gasFET
- Photodetectors, Photo-FET
- Radiation sensitive FETs, RADFET
- FET dosimeters
- Pressure field-effect sensors
- Temperature field-effect sensors
- Field-effect strain sensors
- Nanomaterials in field-effect sensors
- Nanowire field-effect sensors
- 2D-material field-effect sensors
- Graphene field-effect sensors
- Signal amplification
- Sensor signal processing
The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.
Title: Highly sensitive and transparent urea-EnFET based point-of-care diagnostic test sensors using triple gate a-IGZO ISFETs
Authors: Won-Ju Cho
Affiliation: Kwangwoon Universitydisabled, Seoul, South Korea
Abstract: In this study, we propose a highly sensitive and transparent urea-enzymatic field effect transistor (EnFET) point-of-care (POC) diagnostic test sensor using a triple gate amorphous indium gallium zinc oxide (a-IGZO) pH-ion-sensitive field-effect transistor. The EnFET sensor consists of a urease immobilized tin-dioxide (SnO2) sensing membrane extended gate (EG) and an a-IGZO thin film transistor (TFT), which act as the detector and transducer, respectively. In particular, to enhance sensitivity to urea, we designed a triple gate a-IGZO TFT transducer with a top gate at the top of the channel, a bottom gate at the bottom of the channel, and a side gate at the side of the channel. Using capacitive coupling between these triple gates, an extremely high urea sensitivity of 3632.1 mV/pUrea was accomplished in the range of pUrea 2 to 3.5; this is 50 times greater than the sen-sitivities observed in prior work. In addition, high urea sensitivity and reliability were obtained even in the low pUrea (0.5 to 2) range and high pUrea (3.5 to 5) range. Therefore, the proposed urea-EnFET sensor with triple gate a-IGZO TFT and urease immobilized SnO2 EG is expected to be useful for POC diagnostic tests requiring high sensitivity and high reliability.