Special Issue "Design, Fabrication and Characterization of Novel Graphene/Semiconductor Devices"
Deadline for manuscript submissions: closed (31 October 2019).
Interests: field-effect transistors; tunneling transistors; nonvolatile memories; CMOS technologies; solid-state radiation detectors; field emission; optical and electrical properties of carbon nanotubes, graphene, and 2D materials; semiconductor heterojunctions and their application as photodetectors, solar cells, and chemical sensors; van der Waals heterojunctions of 2D-layered materials
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Special Issue in Sustainability: The Applications of Graphene and 2D Layered Materials
Special Issue in Applied Sciences: Field Emission from Graphene and other Nanostructures
Special Issue in Materials: Recent Advances in 2D Nanomaterials
Special Issue in Nanomaterials: 2D Materials and Van der Waals Heterostructures: Physics and Applications
Special Issue in Sensors: Carbon Nanotube Based Sensors
Special Issue in Materials: 2D Transition Metal Dichalcogenides
Special Issue in Sensors: Advanced Field-Effect Sensors
Special Issue in Nanomaterials: Selected Papers from the 2nd International Online Conference on Nanomaterials
Special Issue in Nanomaterials: Electronic Nanodevices
The heterojunction formed by graphene with a bulk 3D semiconductor or with a layered 2D semiconductor has attracted a lot of attention in the last five years. Currently, it is one of the hottest research topics in material and device science, from both a technological and a fundamental perspective.
The graphene/semiconductor heterojunction offers the opportunity to study new physical phenomena occurring at the interface between a gapless 2D material with massless Dirac fermions and a 2D or a 3D semiconductor with parabolic energy bands. From an electrical viewpoint, it presents similarities to a metal/semiconductor Schottky diode, exhibiting rectifying behavior. However, the graphene/semiconductor heterojunction adds new features and functionalities to the traditional metal/semiconductor diodes. Indeed, apart from the higher robustness due to graphene’s thermal stability, chemical inertness and flexibility, it offers a Schottky barrier that is tunable by applied voltage. This novel control stems from the low density of states of graphene and can enable new applications such as photodetection in the infrared region or the detection of gas molecules.
The graphene/semiconductor heterojunction has been proposed for a new generation of photodetectors, solar cells or chemical sensors. Photodetectors based on graphene/Si junctions outperform devices on the market due to their higher responsivity and detectivity over a wide spectrum, ranging from the ultraviolet (UV) to the infrared (IR). Several aspects such as the quality of the interface, the doping or the layout of the semiconductor substrate have been extensively studied. In solar cell applications, graphene not only forms the Schottky junction for photocharge separation, but simultaneously works as antireflective and charge transport layer. High sensitivity chemical sensors have been demonstrated, based on the principle that molecules can modify the Schottky barrier and dramatically change the electrical response. From a theoretical perspective, several effects have been studied to account for the unique properties of graphene, resulting in modifications of the classical thermionic theory of Schottky diodes.
The purpose of this Special Issue is to collect high-quality articles dealing with the design, fabrication and characterization of the graphene/semiconductor heterojunction. Although the Special Issue is focused mainly on practical applications, it also includes theoretical aspects.
We strongly encourage both research papers and review articles.
Prof. Dr. Antonio Di Bartolomeo
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1800 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- Schottky barrier
- Thermionic emission
- Photovoltaic effect
- Charge transfer
- Van der Waals heterojunction
- Graphene/bulk semiconductors
- Graphene/2D materials
- Light absorption, responsivity, detectivity
- IR light detection
- UV light detection
- Graphene/semiconductor photodetectors
- Graphene/semiconductor radiation detectors
- Graphene/semiconductor solar cells
- Graphene/semiconductor chemical sensors.