Nanowires for Novel Technological Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D:Materials and Processing".

Deadline for manuscript submissions: closed (30 November 2023) | Viewed by 3393

Special Issue Editors

Department of Physics, University of Salerno, 84084 Fisciano, Italy
Interests: raman spectroscopy; carbon; CVD; MOCVD; MOVPE; epitaxy; nanomaterials; optoelectronics

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Guest Editor
Department of Physics “E.R. Caianiello”, University of Salerno, 84084 Fisciano, Italy
Interests: optical and electrical properties of nanostructured materials such as carbon nanotubes, graphene, and 2D materials; van der Waals heterostructures and Schottky junctions; field-effect transistors; non-volatile memories; solar cells; photodetectors; field emission devices
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Guest Editor
NEST Laboratory, Scuola Normale Superiore and Instituto Nanoscienze-CNR, 56126 Pisa, Italy
Interests: semiconductor nanowire electronics; quantum transport in nanoscale devices; nanofabrication; thermoelectricity; solar cells; sensors

Special Issue Information

Dear Colleagues,

Nanowires (NWs) are high-aspect-ratio nanostructures, with typical lengths of a few micrometres and diameters below 100 nm. Due to their quasi-one-dimensional geometry, NWs exhibit exceptional structural, morphological, optical, electrical, thermal, and magnetic properties, which go well beyond those of their bulk counterparts and envision them as very promising materials in a wide range of next-generation technological applications. NWs are not only attractive as potential building blocks of novel functional devices but also represent ideal platforms for exploring many fundamental physical phenomena at the nanoscale. One of the unique advantages of epitaxially grown NWs is the remarkable strain tolerance, which enables the growth of defect-free heterostructures, even in the presence of a large lattice mismatch between different materials. Extensive research has indeed been devoted to the realisation of a variety of interesting axial and radial heterostructures, which allow to combine the peculiar properties of one-dimensional nanoengineered systems with the flexibility and tailoring opportunities offered by the integration of different materials. The main objective of this Special Issue of Micromachines is to present relevant and recent insights on nanowires applications in the fields of photodetectors, memories, nanogenerators, solar cells, light-emitting diodes, lasers, energy conversion and storage, biomedicine, and quantum technologies. We invite authors to submit original communications, articles, or reviews on innovative technological applications of the NWs.

Dr. Arun Kumar
Prof. Dr. Antonio Bartolomeo
Dr. Valeria Demontis
Guest Editors

Manuscript Submission Information

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Keywords

  • nanowires
  • heterostructures
  • core-shell nanowires
  • memories
  • sensors
  • photodetectors
  • field-effect transistors
  • optoelectronic devices
  • nanogenerators
  • integrated circuits
  • photovoltaics
  • LEDs
  • lasers

Published Papers (2 papers)

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Research

11 pages, 3118 KiB  
Article
Design of Photonic Crystal Biosensors for Cancer Cell Detection
by Yang Yang, Yang Xiang and Xubin Qi
Micromachines 2023, 14(7), 1478; https://doi.org/10.3390/mi14071478 - 23 Jul 2023
Cited by 3 | Viewed by 1753
Abstract
A photonic crystal biosensor is a compact device fabricated from photonic crystal materials, which enables the detection and monitoring of the presence and concentration changes of biological molecules or chemical substances. In this paper, we propose a biosensor for cancer cell detection based [...] Read more.
A photonic crystal biosensor is a compact device fabricated from photonic crystal materials, which enables the detection and monitoring of the presence and concentration changes of biological molecules or chemical substances. In this paper, we propose a biosensor for cancer cell detection based on a silicon photonic crystal with a hexagonal resonant cavity introduced in a triangular lattice array. One of the bandgap ranges of this structure is 1188 nmλ1968 nm. When the incident light wavelength is within the range of 1188 nmλ1968 nm, the transmission coefficient of this structure at the resonant wavelength of 1469.58 nm is found to reach 99.62% through the finite difference time domain method, with a quality factor of 980. Subsequently, a biosensor is designed from this structure, with its sensing mechanism relying on the change in refractive index leading to a shift in the resonant wavelength. The target sample can be identified by observing the shift in the resonant wavelength. As cancer cells and normal cells possess different refractive indices, this biosensor can be used for their detection. The maximum sensitivity of the sensor is 915.75 nm/RIU and the minimum detection limit is 0.000236 RIU. Full article
(This article belongs to the Special Issue Nanowires for Novel Technological Applications)
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14 pages, 5466 KiB  
Article
Piezotronic and Piezo-Phototronic Effects-Enhanced Core–Shell Structure-Based Nanowire Field-Effect Transistors
by Xiang Liu, Fangpei Li, Wenbo Peng, Quanzhe Zhu, Yangshan Li, Guodong Zheng, Hongyang Tian and Yongning He
Micromachines 2023, 14(7), 1335; https://doi.org/10.3390/mi14071335 - 29 Jun 2023
Viewed by 958
Abstract
Piezotronic and piezo-phototronic effects have been extensively applied to modulate the performance of advanced electronics and optoelectronics. In this study, to systematically investigate the piezotronic and piezo-phototronic effects in field-effect transistors (FETs), a core–shell structure-based Si/ZnO nanowire heterojunction FET (HJFET) model was established [...] Read more.
Piezotronic and piezo-phototronic effects have been extensively applied to modulate the performance of advanced electronics and optoelectronics. In this study, to systematically investigate the piezotronic and piezo-phototronic effects in field-effect transistors (FETs), a core–shell structure-based Si/ZnO nanowire heterojunction FET (HJFET) model was established using the finite element method. We performed a sweep analysis of several parameters of the model. The results show that the channel current increases with the channel radial thickness and channel doping concentration, while it decreases with the channel length, gate doping concentration, and gate voltage. Under a tensile strain of 0.39‰, the saturation current change rate can reach 38%. Finally, another core–shell structure-based ZnO/Si nanowire HJFET model with the same parameters was established. The simulation results show that at a compressive strain of −0.39‰, the saturation current change rate is about 18%, which is smaller than that of the Si/ZnO case. Piezoelectric potential and photogenerated electromotive force jointly regulate the carrier distribution in the channel, change the width of the channel depletion layer and the channel conductivity, and thus regulate the channel current. The research results provide a certain degree of reference for the subsequent experimental design of Zn-based HJFETs and are applicable to other kinds of FETs. Full article
(This article belongs to the Special Issue Nanowires for Novel Technological Applications)
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