Special Issue "2D Transition Metal Dichalcogenides"
A special issue of Materials (ISSN 1996-1944).
Deadline for manuscript submissions: closed (31 December 2019).
Interests: field-effect transistors; tunneling transistors; nonvolatile memories; CMOS technologies; solid-state radiation detectors; field emission; optical and electrical properties of carbon nanotubes, graphene, and 2D materials; semiconductor heterojunctions and their application as photodetectors, solar cells, and chemical sensors; van der Waals heterojunctions of 2D-layered materials
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In the past decade, researchers have been actively looking for alternative 2D materials to overcome the difficulties related to the absence of a bandgap in graphene. Transition metal dichalcogenides (TMDCs), with a structure in the form of X–M–X, where M is a transition metal element from groups 4–7 and 10, while X is a chalcogen (S, Se, Te), have promptly emerged as promising materials.
Despite the fact that the bulk form has been well-studied in the past, the properties of TMDCs in the 2D limit are still relatively unexplored. The great interest in 2D TMDCs is related to their rich chemistry and diverse properties. TMDCs include insulators (HfS2, etc.), semiconductors (MoS2, WSe2, WS2, etc.), semimetals (WTe2, etc.), and metals (VSe2, etc.). After the initial focus on Mo- and W-based dichalcogenides, several new 2D TMDC members have emerged recently, such as those with noble metals (PdSe2, PtSe2, etc.). TMDCs have also become popular in a variety of applications in electronics, optoelectronics, spintronics, mechanics or as environmental, chemical or biological sensors.
The technological exploitation of TMDC poses several challenges. Substantial research in their synthesis methods to yield controllable and uniform crystals as well as better understanding and treatment of the interfaces with other 2D materials, dielectrics or metals is still needed. Their promise to be a competitive alternative for ultimately scaled Si technology nodes can be realized only if the mobility, the device parasitic resistance, and the variability can be optimized.
The aim of this Special Issue is to provide a platform for both experimental and theoretical studies on the fundamentals and applications of 2D transition metal dichalcogenides. Scientists and engineers currently involved in the challenging investigation of the properties and the applications of TMDCs are warmly invited to submit both review and original research articles.
Sincerely,Prof. Dr. Antonio Di Bartolomeo
Manuscript Submission Information
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- Transition metal dichalchogenide
- Synthesis: Exfoliation, chemical vapor deposition, molecular beam epitaxy
- Electronic bandstructure: Bandgap, spin–orbit, and spin–valley coupling
- Correlated and topological phases
- Transport properties
- Mobility engineering
- Optical properties: Emission, absorption, excitons
- Mechanical properties
- Strain engineering
- Semiconductor devices: Heterostructures, transistors, photodetectors, memories, high-frequency applications
- Flexible electronics
- Field emission
- Defects and doping
- Radiation effects